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최건오,Xiaowu Tang,Rixuan Wang,Kaibin Wu,정용진,안태규,김세현,Liwei Mi 한국공업화학회 2022 Journal of Industrial and Engineering Chemistry Vol.116 No.-
Significant efforts have been devoted to developing dielectric elastomer actuators owing to their mechanicalflexibilities, silent operation, and muscle-like performances. However, it still remains a challenge todemonstrate the actuators that maintain function when subjected to damage because most soft materialsconstituting such devices are vulnerable to mechanical stresses during repeated operation. Here, selfhealableelectrodes suitable for dielectric elastomer actuators were prepared from an eco-friendlygelatin-based composite including conductive ions and hydrogen bonds. Electrohydrodynamic printingwas used to reproducibly fabricate a custom-made electrode with desired geometry. The printedgelatin-based electrodes were attached onto elastomers to fabricate dielectric elastomer actuators. Thedevices exhibited good actuator operation and, owing to the self-healing capability of the gelatinbasedelectrodes, almost fully recovered their performances with an efficiency of up to 96.8% even afterthe electrodes were damaged. Furthermore, the potential application of the gelatin-based electrode wasexplored by using them as a strain sensor; this sensor showed a sensitive dependence of electrical resistanceon external joint movements. We believe this work provides a useful guideline for designing selfhealableconductive composites that can be effectively used to make printed actuators and sensorsendowed with good ionic conductivity and useful mechanical properties.
SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao,Xiaowu Cai,Zhengsheng Han,Yun Tang,Liqiang Ding,Ruirui Xia,Mali Gao,Fazhan Zhao 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.5
Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifices in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the offset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to − 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.
金경勳,김철환,조요한,Xiaowu Tang,이정훈,권혁진,이지훈,김세현,안태규 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.78 No.-
The electrohydrodynamic jet (EHD) printing technique allows for the direct printing of semiconductingpolymer solutions to form desired patterns. Herein, an EHD-printed diketopyrrolopyrrole (DPP)-basedcopolymer, PTDPPSe-SiC5, was used as the active layer for the fabrication of ambipolar organicfieldeffecttransistors (OFETs). Under optimized EHD conditions, the measured hole and electron mobilities ofthe PTDPPSe-SiC5 OFETs were 0.75 and 1.08 cm2/(V s), which led to a better electrical performance thanthat displayed by OFETs containing the same polymer but deposited using the spin-coating technique. Morphological analyses were carried out to help explain this difference in OFET performance, andshowed the deployment of the EHD printing technique resulting in an improved polymer alignment andcrystallinity, despite being performed without the use complex guided surface templates or additionalpre- or post-deposition processing.
Kim, Kyunghun,Kim, Cheulhwan,Jo, Yohan,Tang, Xiaowu,Lee, Jung-Hoon,Kwon, Hyeok-jin,Lee, Jihoon,Kim, Se Hyun,An, Tae Kyu Elsevier 2019 Journal of industrial and engineering chemistry Vol.78 No.-
<P><B>Abstract</B></P> <P>The electrohydrodynamic jet (EHD) printing technique allows for the direct printing of semiconducting polymer solutions to form desired patterns. Herein, an EHD-printed diketopyrrolopyrrole (DPP)-based copolymer, PTDPPSe-SiC5, was used as the active layer for the fabrication of ambipolar organic field-effect transistors (OFETs). Under optimized EHD conditions, the measured hole and electron mobilities of the PTDPPSe-SiC5 OFETs were 0.75 and 1.08cm<SUP>2</SUP>/(Vs), which led to a better electrical performance than that displayed by OFETs containing the same polymer but deposited using the spin-coating technique. Morphological analyses were carried out to help explain this difference in OFET performance, and showed the deployment of the EHD printing technique resulting in an improved polymer alignment and crystallinity, despite being performed without the use complex guided surface templates or additional pre- or post-deposition processing.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We demonstrated EHD printing of a diketopyrrolopyrrole-based copolymer (PTDPPSe-SiC5). </LI> <LI> We optimized EHD printing and OFET fabrication conditions. </LI> <LI> We studied the electrical and morphological properties of printed ambipolar PTDPPSe-SiC5 OFET. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Kwon, Hyeok-jin,Gao, Chun Yan,Tang, Xiaowu,Hong, Jisu,Park, Chan Eon,Kong, Hoyoul,Kim, Se Hyun,Yang, Hoichang Elsevier 2020 ORGANIC ELECTRONICS Vol.77 No.-
<P><B>Abstract</B></P> <P>Organic field-effect transistors (OFETs) have been fabricated by deposition of an organic semiconductor on inorganic dielectric layers like SiO<SUB>2</SUB>. However, inorganic oxide dielectrics have hydrophilic surface properties, which interrupts the growth of organic semiconductors with highly aligned and π-extended domains, and provide many absorbing sites for moisture that work as trap sites for charge carriers. To overcome this problem, a proper surface-treatment method is required to improve the morphology of organic semiconductors. In this study, we treat SiO<SUB>2</SUB> dielectrics with polystyrene (PS) and Cytop (a fluorinated cross-linkable polymer) to tune the surface properties when fabricating pentacene-based bottom-gate top-contact OFETs, and analyzed the influence of surface functionalization on the growth of the pentacene crystals under different deposition conditions and electrical device characteristics. By comparing the morphological features of pentacene with the device characteristics, the effect of hydrophobicity on the morphology of the pentacene polymorph, strongly related to the charge-transport mechanism, could be described.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Interfacial characteristic between active and dielectric layer is significant parts in morphological and electrical property in OFETs. </LI> <LI> Morphological structure of pentacene was investigated according to the hydrophobicity with PS and Cytop surface modification. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>