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RISS 인기검색어
- 검색키워드
- 저자 : Zhengsheng Han (검색결과 4 건)
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SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao,Xiaowu Cai,Zhengsheng Han,Yun Tang,Liqiang Ding,Ruirui Xia,Mali Gao,Fazhan Zhao 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.5
Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifices in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the offset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to − 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.
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A snapback‑free reverse‑conducting IGBT with multiple extraction channels
Weizhong Chen,Xuwei Lin,Shun Li,Yao Huang,Yi Huang,Zhengsheng Han 전력전자학회 2022 JOURNAL OF POWER ELECTRONICS Vol.22 No.2
A novel Reverse-Conducting Insulated Gate Bipolar Transistor (RC-IGBT) with Multiple Extraction Channels (MEC) is proposed and investigated. The MEC is characterized by two transistors NPN1 (Nbuffer/Pbarrier/Ncollector), NPN2 (Nbuffer/Pfloat/Npoly) and short Rgap in the collector. The P-Collector, N-Collector, polysilicon and Rgap are shorted together, thus the NPN1, NPN2 and Rgap are parallel with the PNP transistor (Pbody/Nbuffer/Pcollector). At the forward conduction, the unipolar mode is effectively suppressed by the electron barriers P-barrier (the base of the NPN1) and P-float (the base of the NPN2), thus the snapback effect can be completely eliminated. At the turn-off, the electrons are quickly extracted by three channels of the NPN1, NPN2 and Rgap, thus the Eoff can be remarkably decreased. Results show at the same Von of 2.8 V, the Eoff of the MEC RC-IGBT is reduced by 20%, 37%, 45% and 59% compared to AB, FPL, DFS and TOC RC-IGBT, respectively. Therefore the excellent trade-off characteristics with snapback free are achieved.
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A lateral superjunction SOI LDMOS with double‑conductive channels
Weizhong Chen,Haifeng Qin,Xuwei Lin,Yi Huang,Zhengsheng Han 전력전자학회 2022 JOURNAL OF POWER ELECTRONICS Vol.22 No.4
A novel lateral superjunction silicon-on-insulator lateral double-diffused MOS with double-conductive channels (DCLDMOS) is proposed and subsequently investigated by the SENTAURUS TCAD. First, the double channels (DC) feature a surface and bulk gate for providing the surface and bulk electron channels, respectively. Second, the P-pillar is inserted into the N-drift to divide it into the N-drift1 and N-drift2 regions. In this manner, the lateral super junction (SJ) can be formed by the sandwich-structured N-drift1/P-pillar/N-drift2. At the forward conduction state, the DC provides the double electron emission channels. The specific on-resistance (Ron,sp) is obviously decreased, and an even higher peak transfer conductance (gm) is achieved. At the breakdown state, the SJ helps to deplete the whole drift, including the N-drift1/P-pillar/N-drift2, and the electric field Efield distribution is effectively optimized. Furthermore, the Ron,sp is significantly decreased by the DC and SJ. Consequently, the tradeoff relationship between BV and Ron,sp is improved by the charge compensation and the assisted depletion effect, which are performed by the SJ. The results indicate that the DC LDMOS can break through the single RESURF and achieve Baliga’s figure of merit (FOM) of 3.32 MW/cm2. In addition, the DC LDMOS with the N-trench (NT) inserted into the buried oxide (DC-NT LDMOS) can achieve better breakdown properties by further optimizing the Efield distribution between the source and drain regions, and BV is remarkably increased. Furthermore, Ron,sp can be decreased by the NT. Finally, it breaks through the triple RESURF to achieve the FOM of 4.87 MW/cm2.
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Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects
Zikai Wei,Weizhong Chen,Haishi Wang,Haifeng Qin,Zhengsheng Han 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.4
A Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) featuring an Active Trench Barrier (ATB) based on Super-Junction (SJ) technology is proposed and investigated. The double-trench gates are designed at the N-pillar and P-pillar of the SJ drift. Consequently, a p-type ATB located between the two trench gates is formed. The ATB working mechanism is controlled and modulated by the Gate Voltage (VGE) of the double-trench gates. In the forward conduction state, the ATB channel is depleted and automatically pinched off by the positive VGE. Thus, the barrier potential of the ATB is remarkably improved. Additionally, holes accumulate underneath the ATB and maintain high conductivity modulation of the SJ drift region. Thus, the low on-state voltage drop (VON) is obtained. In the reverse conduction state, the ATB pinch-off effect automatically fades away with the grounded VGE. In addition, the ATB, P-pillar, and N + act as the anode, drift, and cathode of the Free-Wheeling Diode (FWD), respectively. Electrons are blocked and accumulated by the trench gates. Thus, the hole injection is enhanced and the reverse conduction voltage (VR) is reduced. In the turn-off state, excessive holes can be effectively extracted by the extra ATB channel, and the turn-off loss (EOFF) is remarkably decreased. As a result, the trade-off relationship between VON and EOFF can be significantly improved, which achieves the best comprehensive property when compared with the conventional RC-IGBT and SJ-IGBT.
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