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졸-겔 법으로 성장시킨 Nb가 첨가된 Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> 박막의 미세구조와 전기적 성질
김상수,장기완,한창희,이호섭,김원정,최은경,박문흠,Kim, Sang-Su,Jang, Ki-Wan,Han, Chang-Hee,Lee, Ho-Sueb,Kim, Won-Jeong,Choi, Eun-Kyung,Park, Mun-Heum 한국재료학회 2003 한국재료학회지 Vol.13 No.5
Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5+}$ ion substitution for $Ti^{4+}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5+}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.