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정병열,이종찬,송재주 順天靑巖大學 1998 論文集-順天靑巖大學 Vol.22 No.2
Converter would be destroyed by the many variable input voltage between the drain and source in switching or the reverse voltage of diode because the voltage exceed the rated value in according to increasing of input voltage. In this work, we developed the converter circuit with variable input which stabilize a system by means of preventing the reverse boltage of the switching and diode from increasing of imput voltage highly. Also the steady state characteristic is show by applying the slope method, these simulation results are verified though experiment, and therefore it is shown that this converter circuit proper to application for the variable imput.
홍경한,전상신,이승재,박찬수,권일욱,김재열,김병철,하옥남 한국공작기계학회 2004 한국생산제조학회지 Vol.13 No.4
Fin-tube type(Fin-type) heat exchanger has been tested in order to replace the heat exchanger of parallel flow type(P.F-type) which is now widly used in automobile air conditioning system. The following conclusions are drawn by the comparison of the characteristics of the heat exchangers. Evaporator and condenser capacities and COP(Coefficience of performance) were varied as with the compressor speed, outdoor air temperature and air flow rate changed, which much influenced on the characteristics of the air conditioning system. Evaporator and condenser capacities were increased with increasing compressor speed and outdoor air temperature. Evaporator and condenser pressures of Fin- type were decreased by 7% and 5% respectively compared with those of P.F-type. The COP of Fin-type was decreased with increasing outdoor air temperature and compressor speed. The COP of P.F-type was decreased by 14% compared with that of Fin-type.
단클론항체를 이용한 타액 내 Streptococcus mutans 수준의 측정
김추성,김재곤,양연미,백병주,이경열,김미아,임수민 大韓小兒齒科學會 2010 大韓小兒齒科學會誌 Vol.37 No.2
Streptococcus mutans는 구강 내에 상존하는 치아우식증의 주요 원인균으로서 치면의 피막에 부착 후 glucan을 형성하여 세균의 군락을 이루며, 외부로부터 공급된 자당대사를 통하여 유기산을 생성함으로써 법랑질을 탈회시킨다. 치아우식 활성도의 평가를 위한 단클론항체를 이용한 방법은 진료실에서 빠른 시간 내에 간편하게 타액에 존재하는 Streptococcus mutans의 정량분석이 가능한 방법이다. 이 연구는 3세에서 6세 사이의 어린이 15명을 대상으로 자극성 타액을 채취하여 시판 중인 단클론항체를 이용한 Salivacheck Mutans, strip을 이용한 Dentocult-SM 그리고 MSB배지 배양법으로서 타액 내 Streptococcus mutans를 측정한 후 그 값을 우식경험치아수와 비교하여 상관관계를 알아보았다. Saliva-check Mutans를 이용한 방법은 Dentocult-SM과 MSB배지법과 통계학적으로 유의한 상관관계를 보였으나 (p<0.05), MSB배지법은 어린이의 우식경험치아수와 통계학적으로 유의한 결과를 나타내지 않았다 (p=0.34). Streptococcus mutans, one of the major causal agents of dental caries, is component of the dental plaque. It produces various organic acids such as lactic acid which is the end-product of glycolysis, and this leads to dental caries. A new system using species-specific monoclonal antibodies was developed to detect Streptococcus mutans in saliva. The system quickly detects salivary Streptococcus mutans in 30min and classifies the result into two levels. The purpose of this study was to investigate correlation between monoclonal antibody-based detecting system and selective medium-based detecting methods. Children's deft indices were also compared with Streptococcus mutans counts in MSB agar plate. Subjects consisted of 15 children in the age of 3 to 6 years. They were assigned to three groups: Group Ⅰ (deft index = 3), Group Ⅱ (deft index ≤ 3), Group Ⅲ (deft index ≥ 4). The results are as follows : 1. The rate of children with positive response was 13.3% and with negative response was 86.7% in the result of Saliva-check Mutans test kit. 2. There was a positive correlation between monoclonal antibody-based detecting system and selective medium-based detecting methods (p<0.05). 3. Streptococcus mutans counts in MSB agar plate were irrelevant to deft of children(p=0.34).
Incorporation of Unnatural Amino Acids in Response to the AGG Codon
Lee, Byeong Sung,Shin, Seunggun,Jeon, Jong Yeob,Jang, Kyoung-Soon,Lee, Bun Yeol,Choi, Sangdun,Yoo, Tae Hyeon American Chemical Society 2015 ACS CHEMICAL BIOLOGY Vol.10 No.7
<P>The biological protein synthesis system has been engineered to incorporate unnatural amino acid into proteins, and this has opened up new routes for engineering proteins with novel compositions. While such systems have been successfully applied in research, there remains a need to develop new approaches with respect to the wider application of unnatural amino acids. In this study, we reported a strategy for incorporating unnatural amino acids into proteins by reassigning one of the Arg sense codons, the AGG codon. Using this method, several unnatural amino acids were quantitatively incorporated into the AGG site. Furthermore, we applied the method to multiple AGG sites, and even to tandem AGG sequences. The method developed and described here could be used for engineering proteins with diverse unnatural amino acids, particularly when employed in combination with other methods.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/acbcct/2015/acbcct.2015.10.issue-7/acschembio.5b00230/production/images/medium/cb-2015-00230j_0004.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cb5b00230'>ACS Electronic Supporting Info</A></P>
Lee, Byeong Hyeon,Han, Sangmin,Lee, Sang Yeol The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.1
A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10<sup>2</sup> Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup>, S.S of 0.9 Vdecade<sup>−1</sup>, and on/off current ratio of 9.7×10<sup>6</sup> A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.
Lee, Byeong Hyeon,Lee, Sang Yeol The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.1
TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.
Electrode-Adaptive Thin-Film Integrated Logic Circuits
Lee, Byeong Hyeon,Cho, Kyung-Sang,Sohn, Ahrum,Hwang, Sungwoo,Lee, Sang Yeol Institute of Electrical and Electronics Engineers 2019 IEEE transactions on electron devices Vol.66 No.2
<P>Amorphous oxide-based thin-film logic circuits have been fabricated using only an n-type amorphous silicon–zinc–tin–oxide (a-SZTO) channel layer with different source/drain electrodes. Enhancement-mode thin-film transistors (TFTs) were fabricated with oxide electrodes. Depletion-mode TFTs were fabricated with metal electrode. Work functions were measured by Kelvin probemicroscopy. The barrier heights ( <TEX>$\Phi _{\textsf {B}}$</TEX>) between the a-SZTO channel layer and the electrode were measured to be 1.831, 2.341, and 2.339 eV for the Ti/Al electrode, Indium–silicon–oxide (ISO) electrode, and indium–tin–oxide (ITO) electrode, respectively. The physicalmechanism on the variation of sheet and contact resistances was investigated using a transmission line method, and the change in the resistances is closely related to <TEX>$\Phi _{\textsf {B}}$</TEX>. Inverters were fabricated, with different <TEX>$V_{\textsf {TH}}$</TEX> values adopted simply by using different contact characteristics between various electrodes and the semiconductor channel. High values of voltage gains in inverters were obtained: 12.33 (ISO) and 11.75 (ITO) at <TEX>$V_{\textsf {DD}}= 5$</TEX> V. Itwas also confirmed that more complicated n-type-based NAND and NOR thin-film circuits, implementedwith different electrodes, functioned as conventional logic circuits. This simple fabrication method of thin-film logic circuits opens the possibility of implementing next-generation stacked integrated circuit technology.</P>