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전환진 한국공업화학회 2017 한국공업화학회 연구논문 초록집 Vol.2017 No.1
Recently, we introduced “secondary sputtering lithography” (SSL), a patterning technique that can be used to fabricate ultrahigh-resolution (10 nm), three-dimensionally complex structures with high aspect ratios over large areas by utilizing plasma processing and without requiring specialized equipment. This technique has many advantages. First, SSL can enable the fabrication of high-resolution 10 nm-scale 3D structures from a microsized master pattern (100 nm to ∼10μm). In addition, SSL can be used to produce various complex 3D nanostructures, such as line patterns and cup/ hollow-cylinder-shaped patterns, at a resolution of 10 nm and an aspect ratio of ∼30 because this method can transfer the 3D side surface shape of organic prepatterns to 3D inorganic structures with walls having widths of 10 nm. Lastly, SSL can be applied to most inorganic materials, as this technique involves the physical etching of plasma ions and not a chemical process.
전환진,정현수 한국고분자학회 2016 Macromolecular Research Vol.24 No.11
We describe a highly efficient technique for nanostructuring silicon (Si) wafer surfaces with high-resolution (< 15 nm) and high aspect ratio (20) structures without any deposition processes. Our strategy is based on advanced secondary sputtering lithography (SSL), which combines physical and chemical plasma etching during an ion bombardment process. Compared with general SSL techniques using Ar gas only, the reactive radicals assisted the SSL and promoted the Si etching rate to simultaneously deposit the etched Si materials onto the side surface of a pre-patterned polymer. In addition, various three-dimensional Si nanostructure shapes could be developed simply by controlling the pre-patterned polymer, thereby providing a simple and versatile approach to customizing this technique.