http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
전력 MOSFET의 V_(GS)와 V_(DS)전압 검출에 의한 온도측정
이우선,조금배,최한수 조선대학교 생산기술연구소 1988 生産技術硏究 Vol.10 No.1
One of the most important parameters of any semiconductor device is its operating temperature. The operating temperature is important in determining the reliability and operating life of the device, and it also has a strong influence on many of the electrical pramatcrs of the device The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate to source bias voltage. In this study, the decision method of the internal temperature measurement of power MOSFET by V_(GS) (Gate-Source Voltage) and V_(DS) (Drain-Source Voltage) methods are presented.
이우선,손경춘 조선대학교 에너지.자원신기술연구소 2000 에너지·자원신기술연구소 논문지 Vol.22 No.1
Magnetic Characteristics of InSb hall device of multilayerd structures were investigated. For the measurement of electrical properties of hall device, evaporated InSb thin film fabricated with series and parallel multilayers. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. We found that the XRD analysis of InSb thin film showed good properties at 200℃, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of magnetic characteristics were discussed.
이우선,김상용 조선대학교 에너지.자원신기술연구소 2000 에너지·자원신기술연구소 논문지 Vol.22 No.1
We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), O₃boro-phospho silicate glass (O₃BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence (TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished O₃-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.
Langmuir-Blodgett법에 의한 지질단분자막(DPPC)의 전기적 특성
이우선,강용철 조선대학교 생산기술연구소 1996 生産技術硏究 Vol.18 No.2
Langmuir-Blodgett(LB) method is known as a unique method for preparing organic thin films. which can control thickness of the films in molecular level, and many kinds of ultra thin films of functional molecules have been prepared using this method. In this study. the organization of phospholipid monolavers on a water surface was investigated by means of displacement current measurement technique. Finally, we measured the differential thermal analysis (DTA) of sample. The result of DTA was acquired at 124.6℃