http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
산화막 CMP 공정에서 슬러리 온도 변화에 따른 연마 특성
고필주,박성우,김남훈,서용진,이우선,Ko, Pil-Ju,Park, Sung-Woo,Kim, Nam-Hoon,Seo, Yong-Jin,Lee, Woo-Sun 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.
Damascene 공정을 이용한 Pb(Zr,Ti)O₃ 캐패시터 제조 연구
고필주(Pil-Ju Ko),이우선(Woo-Sun Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (PRAM) devices. Through the last decade, the lead zircon ate titanate (PZT) is one of the most attractive perovskite-tvpe materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the Pb<SUB>1.1</SUB> (Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O₃ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of Pb<SUB>1.1</SUB>(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O₃ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.
고필주(Pil-Ju Ko),김남훈(Nam-Hoon Kim),이우선(Woo-Sun Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Pb(Zr,Ti)O₃ is one of the most attractive ferroelectric materials for realizing the FeRAM due to its higher remanant polarization and the ability to withstand higher coercive fields. Generally, the ferroelectric materials were patterned by a plasma etching process for high-density FeRAM. The applicable possibility of CMP process to pattern Pb(Zr,Ti)O₃ instead of plasma etching process was investigated in our previous study for improvement of an angled sidewall which prevents the densification of ferroelectric memory and is apt to receive the plasma damage. Our previous study showed that good removal rate with the excellent surface roughness compared to plasma etching process were obtained by CMP process for the patterning of Pb(Zr,Ti)O₃. The suitable selectivity to TEOS without any damage to the structural property of Pb(Zr,Ti)O₃ was also guaranteed. In this study, the removal mechanism of Pb<SUB>1.1</SUB>(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O₃ coated by sol-gel method was investigated. Surface analysis of polished specimens at the best and worst conditions was carried out by XPS.
고필주(Pil-Ju Ko),김남훈(Nam-Hoon Kim),이우선(Woo-Sun Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of H₂O₂ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% H₂O₂ oxidizer from 24.81㎚/min to 113.59㎚/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% H₂O₂ oxidizer.
이우선,고필주,최권우,정수복,최창주 조선대학교 에너지.자원신기술연구소 2003 에너지·자원신기술연구소 논문지 Vol.25 No.2
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). We investigated the performance of WO₃ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the WO₃ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.
산화제 첨가에 따른 WO<sub>3</sub> 박막의 CMP 평탄화 특성
이우선,고필주,김남훈,서용진,Lee, Woo-Sun,Ko, Pil-Ju,Kim, Nam-Hoon,Seo, Yong-Jin 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.1
Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.
고집적 메모리 커패시터의 Vertical Sidewall Patterning을 위한 BTO 박막의 CMP 특성
서용진,고필주,박성우,이강연,이우선 대한전기학회 2006 전기학회논문지C Vol.55 No.3(C)
- Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.