http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
김남오,민완기,김형곤,오금곤,현승철,Kim, Nam-oh,Min, Wan-Ki,Kim, Hyung-gon,Oh, Gum-kon,Hyun, Seung-cheol 대한전기학회 2004 전기학회논문지 P Vol.53 No.1
The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).
김남오,김형곤,김덕태,송호준,Kim, Nam-Oh,Kim, Hyung-Gon,Kim, Duck-Tea,Sung, Heo-Jun 대한전기학회 2003 전기학회논문지 P Vol.52 No.2
$Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals were grown by the chemical transport reaction(CTR) method. They were crystallized in the monoclinic structure. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]. The direct energy gaps of $Zn_4SnSe_6$ and $Zn_4SnSe_6$:$Co^{2+}$ single crystals were given by 2.146[eV] and 2.042[eV] at 300[K]. The temperature dependence of the optical energy gap is well presented by the Varshni equation.
화학수송법으로 성장한 Cd4GeSe6 및 Cd4gEsE6:C02+단결정에서 에너지 띠 간격의 온도의 존성 및 열역학함수 추정
김남오,김덕태,현승철,김형곤,오금곤 대한전기학회 2003 전기학회논문지C Vol.52 No.2
- In this work Cd4GeSe6 and Cd4GeSe6:Co2+ single crystals were grown by the chemical transport reaction method and the structure of Cd4GeSe6 and Cd4GeSe6:Co2+ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.
$\beta$-$FeSi_2$ 단결정의 전기적 광학적인 특성
김남오,김형곤,이우선 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.8
Plate-type $\beta$-FeSi$_2$single crystals were grown using FeSi$_2$, Fe, and Si as starting materials by the chemical transport reaction method. The $\beta$-FeSi$_2$single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the $\beta$-FeSi$_2$ single crystal. The electrical resistivity values was 1.608Ωcm and electron mobility was 3x10$^{-1}$ $\textrm{cm}^2$/V.sec at room temperature.
수직 Bridgman법으로 제작한 $\beta-In_2Te_3$ 단결정의 광학적 전기적 특성
김남오,이강연,정병호,최연옥,신화영,조금배,Kim, Nam-Oh,Lee, Kang-Yeon,Jeong, Byeong-Ho,Choi, Youn-Ok,Shin, Hwa-Young,Cho, Geum-Bae 대한전기학회 2009 전기학회논문지 P Vol.58 No.4
The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.
Study on the CMP Characteristics of a Copper Passivity Layer Formed by Dipping in an Oxidizer
김남오,최연옥,이우선,최권우,이강연 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.1
Copper has been the material for ultra-large-scale integrated circuits owing to its excellent electromigration resistance and low electrical resistance. The polishing mechanism of metal chemical mechanical polishing (CMP) has been reported to be a repeated process of passive oxide layer formation through the use of on oxidizer and then the abrasion action of the slurry. However, because copper is softer and more sensitive to corrosion than tungsten, the slurry composition and the polishing mechanism during the copper CMP process may be more complicated. In a general Cu-CMP process, a mixture of an alumina-based slurry and an oxidizer in proper proportion is used in order to form a passive oxide layer such as CuO and CuO_2. However, a conventional CMP process consumes an unnecessary amount of slurry to formed the passive layer. Therefore, in this paper, we propose a new method. The copper samples were oxidized by dipping in an oxidizer for an appropriate time to minimize the consumption of slurry before the CMP process. Then, we performed the CMP process. In order to compare the polishing characteristics of the copper thin film, we discuss the CMP removal rate and non-uniformity, as well as the microstructure of the surface and a layer cross-section based on a scanning