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분석 조건에 따른 p-MOSFET의 게이트에 유기된 드레인 누설전류의 열화
배지철,이용재 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.1
The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.
CAD/CAM의 복제 기법을 이용한 전방 유도의 재현 증례
배지철,김원희,전영찬,정창모,윤미정,허중보,Bae, Ji-Cheol,Kim, Won-Hee,Jeon, Yong-Chan,Jeong, Chang-Mo,Yoon, Mi-Jung,Huh, Jung-Bo 대한치과보철학회 2014 대한치과보철학회지 Vol.52 No.2
광범위한 보철 수복 치료는 수복 부위별로 다양한 고려 요소를 필요로 한다. 특히, 상악 전치부의 교합 계획은 다른 부위보다 더 많은 지식과 기술을 요한다. 전방 유도(anterior guidance)를 결정하는 상악 전치부 설면 외형을 제대로 형성하지 못하면, 기능적인 불편감과 함께 전체 치열의 불안정성을 야기한다. 임시 수복물 장착한 상태에서 적절한 조정을 통해 조화로운 전방 유도를 얻었다면 임시 수복물의 설면 형태를 최종 보철물로 정확하게 구현하는 방법에 주의를 기울여야 한다. 본 증례에서는 CAD/CAM (computer-aided design / computer-aided manufacturing) 시스템의 복제 기법을 활용하여 지대치의 디지털 이미지와 임시수복물의 디지털 이미지를 중첩시켜 보다 간편하게 보철물 형태를 복제하였다. 기존의 방법에 비해 술자는 진료실 시간을 줄일 수 있고, 환자는 기능과 심미 모두 만족할 만한 결과를 얻어 이를 보고하고자 한다. Comprehensive prosthetic treatment requires considerations from various points of view. The anterior guidance is important factor in prosthodontic treatment of anterior teeth. Lingual surface contour of anterior restoration is so critical that a small mistake of laboratory or clinical process can cause discomfort of patient and disharmony of entire dentition. There are no guidelines for lingual surface contour that fit all patients. Therefore the lingual surface of provisional restoration is most accurately described as a customized one. The dentist transfers the exact information of anterior guidance that has made through long term provisional restoration to the technician. This case introduce that the duplication technique of CAD/CAM system to reproduce the anterior guidance of provisional restoration. This method can improve satisfaction of both patient and dentist.
배지철,조남한,김재현,허규연,진상만,이문규 대한내분비학회 2020 Endocrinology and metabolism Vol.35 No.2
Background: Type 2 diabetes and cardiovascular disease (CVD) are the most important sequelae of obesity and the leading cause ofdeath. We evaluated the association between body mass index (BMI) and the risk of incident type 2 diabetes, CVD, and all-causemortality in a prospective study of a Korean population. Methods: The shapes of the associations were modeled by restricted cubic splines regression analysis. After categorizing all subjects(n=8,900) into octiles based on their BMI levels, we estimated the hazard ratio (HR) for the association of categorized BMI levelswith the risk of incident CVD and type 2 diabetes using a Cox’s proportional hazard analysis. Results: The mean age of participants was 52 years and 48% were men. Of the subjects at baseline, 39.0% of men and 45.6% ofwomen were classified as obese (BMI ≥25 kg/m2). Over a mean follow-up of 8.1 years, CVD events occurred in 509 participants;436 died; and 1,258 subjects developed type 2 diabetes. The increased risk of incident diabetes began to be significant at BMI 23 to24 kg/m2 in both sexes (HR, 1.8). For CVD events, the risk began to increase significantly at BMI 26 to 28 kg/m2 (HR, 1.6). Wefound a reverse J-shaped relationship between BMI and all-cause mortality, with an increased risk among individuals with BMI values in lower range (BMI <21 kg/m2). Conclusion: These results suggest that the BMI cut-off points for observed risk were varied depending on the diseases and that theBMI classification of obesity need to be revised to reflect differential risk of obesity-related diseases.
Excimer Laser-Assisted In Situ Phosphorous Doped Si(1-x)Gex Epilayer Activation
배지철,YoungjaeLee 한국전자통신연구원 2003 ETRI Journal Vol.25 No.4
This paper presents results from experiments on laserannealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.