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IEEE 802.11a 무선랜용 중간전력 SPDT 초고주차단일집적회로 스위치 제작 및 특성
문재경,김해천,박종욱,Mun JaeKyoung,Kim Haecheon,Park Chong-Ook 한국통신학회 2005 韓國通信學會論文誌 Vol.30 No.10A
본 연구에서는 IEEE 802.11a 표준 무선랜 단말기에 활용 가능한 SPDT Tx/Rx 스위치 MMICs를 설계 및 제작하였다. 이를 위하여 먼저 핵심이 되는 pHEMT 스위치 소자의 에피구조를 설계하였으며, 한국전자통신연구원(ETRI의 $0.5{\mu}m$ pHEMT 스위치 공정을 이용하였다. 제작된 SPDT형 Tx/Rx 스위치 MMIC는 주파수 5.8 GHz, 동작전압 0/-3V에서 삽입손실 0.68 dB, 격리도 35.64 dB, 그리고 반사손실 13.4dB의 특성을 보였으며, 전력전송능력인 P1dB는 약 25dBm, 그리고 선헝성의 척도인 IIP3는 42 dBm 이상으로 평가되었다. 제작된 스위치 회로의 성능은 상용제품과 비교 분석한 결과 반사손실은 약간 부족하였으나 삽입손실은 비슷한 수준이며, 특히 격리도는 동작전압 ${\pm}$ 3V/0Vv, 주파수 5.8GHz에서 약 8 dB 이상 우수하였다. 이와 같은 여러 가지의 스위치 회로의 성능은 본연구에서 개발된 pHEMT SPDT 스위치는 IEEE802.11a 표준 5GHz 대역 무선랜에 충분히 할용할수 있을 것으로 생각된다. In this paper, SPDT Tx/Rx MMIC switch applicable to IEEE 802.11a WLAN systems is designed and fabricated using a specific designed epitaxial layered pHEMT wafer and ETRI's $0.5{\mu}m$ pHEMT switch process. The SPDT switch exhibits a low insertion loss of 0.68dB, high isolation of 35.64dB, return loss of 13.4dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V. The comparison of the measured performances with commercial products based on the GaAs pHEMT technology for low voltage operating at ${\pm}$ 3V/0V shows that the return loss is somewhat inferior to the commercial products and insertion loss is compatible with each other however, isolation characteristics are much better than in conventional chips. Based on these performances, we can conclude that the developed SPDT switch MMIC has an enough potential for IEEE802.11a standard 5 GHz-band wireless LAN applications.
Indium oxide 계 후막 센서의 이산화 질소 감지 특성
최성호(Sung Ho Choi),박종욱(Chong Ook Park) 한국센서학회 2002 센서학회지 Vol.11 No.4
The thick film of indium oxide-based semiconductor for the NO_2 detection have been prepared and their characteristics were investigated. It was shown that the optimum operating temperature of the sensors are 350℃ for In_2O_3-based sensor. NO_2 sensitivity increased as the WO_3 concentration increased to more than lwt%. The addition of Pd and Pt also enhanced the sensitivity to NO_2. Indium oxide-based sensors showed excellent reproducibility and stability for the detection of NO_2.
Pd 및 Pd-Rh 게이트 MOS 센서의 수소 및 황화수소가스에 대한 검지특성
이창희(Chang Hee Lee),박종욱(Chong Ook Park) 한국수소및신에너지학회 1997 한국수소 및 신에너지학회논문집 Vol.8 No.4
The H₂ and H₂S sensing characteristics of Pd and Pd-Rh gate MOS sensor and the effect of Pd deposition condition on the hydrogen sensing performance of Pd gate MOS sensor was investigated. The increase of rf power and deposition temperature led to the decrease in the sensitivity and the initial response rate. The deposition temperature gave more effects on the decrease of the sensitivity and the initial response rate than the rf power. The sensitivity of Pd-Rh sensor gave better performance than pure Pd sensor. As the concentration of Rh in the gate increased, the sensitivity decreased. For Pd-Rh sensor, the sensitivity to H₂ was higher than that to H₂S. It was demonstrated that rf power, deposition temperature had an important role in the sensor performance.
서임춘,김동일,예병한,정발,박종욱,Suh, Im-Choon,Kim, Dong-Il,Yeh, Byung-Hahn,Jung, Bahl,Park, Chong-Ook 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.8
To increase the anti-oxidation and anti-wear properties of graphite for the propellant-burning environment, SiC, Pt and Al2O3 multi-layer coatings were conducted succesisvely and the optimum condition was researched. The SiC layer was produced by pack cementation and SiC layer in thickness of 30 ${\mu}{\textrm}{m}$ coating was produced after coating for 6 hours. Pt layer was coated by sputtering, and the Al2O3 layer was coated by reactive sputtering. the thickness of Pt layer and Al2O3 layer was less than one-tenth of that of SiC layer. The pack coated specimens and multi-layer coated specimens were made using above conditions and test-fired. The test result showed that the wear rate of SiC layer is approximately 1/10 compared to that of uncoated graphite.
원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교
이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2
Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.
NO와 NO2 동시 반응을 통한 자동차용 혼합전위 방식 NOx 센서의 감지 기구
윤병영 ( Byoung Young Yoon ),박진수 ( Jin Su Park ),황정숙 ( Jeong Suk Hwang ),박종욱 ( Chong Ook Park ) 대한금속재료학회 ( 구 대한금속학회 ) 2007 ELECTRONIC MATERIALS LETTERS Vol.3 No.1
Mixed potential NOx sensors for automotive exhaust were fabricated by using YSZ(yittria stabilized zirconia) and oxide sensing materials. Though simultaneous response to NO2 and NO, sensing behavior of the sensors was studied at the temperature of 700℃ in 10% O2 containing atmosphere. The EMF and I-V characteristics have been correlated with the NO/NO2 concentrations that are measured by gas analyzer in all effort to elucidate the sensing mechanism of oxide electrode.
SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계
문재경,임종원,장우진,지흥구,안호균,김해천,박종욱,Mun Jae Kyoung,Lim Jong Won,Jang Woo Jin,Ji, Hong Gu,Ahn Ho Kyun,Kim Hae Cheon,Park Chong Ook 한국진공학회 2005 Applied Science and Convergence Technology Vol.14 No.4
This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems. 본 연구에서는 스위치, 위상변위기, 감쇄기등 전파제어회로를 설계 및 제작할 수 있는 pHEMT스위치 소자에 적합한 에피구조를 설계하였다. 고성능의 스위치 소자를 위한 pHEMT 채널층 구조는 이중 면도핑층을 가지며 사용 중 게이트 전극의 전계강도가 약한 깊은 쪽 채널층의 Si 면농도가 상층부보다 약 1/4정도 낮을 경우 격리도등 우수한 특성을 보였다. 설계된 에피구조와 ETRI의 $0.5\mu$m pHEMT MMIC 공정을 이용하여 2.4GHz 및 5GHz 대역 표준 무선랜 단말기에 활용 가능한 SPDT Tx/Rx MMIC 스위치를 설계 및 제작하였다. 제작된 SPDT형 스위치는 주파수 6.0 GHz, 동작전압 0/-3V에서 삽입손실 0.849 dB, 격리도 32.638 dB, 그리고 반사손실 11.006 dB의 특성을 보였으며, 전력전송능력인 $P\_{1dB}$는 약 25dBm, 그리고 선형성의 척도인 IIP3는 42 dBm 이상으로 평가되었다. 이와 같은 칩의 성능은 본 연구에서 개발된 SPDT 단일고주파집적회로 스위치가 2.4GHz뿐만 아니라 SGHB 대역 무선랜 단말기에 활용이 충분히 가능함을 말해준다.