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MOST 네트워크에서 비동기 데이터 전송의 신뢰성 향상 알고리즘 구현
김창영,박유현,전영준,유윤식,Kim, Chang-Young,Park, Yoo-Hyun,Jeon, Young-Joon,Yu, Yun-Sik 한국정보통신학회 2012 한국정보통신학회논문지 Vol.16 No.12
MOST(Media Oriented Systems Transports)Network는 차량용 멀티미디어 기기를 위한 통신 프로토콜로서 높은 대역폭과 신뢰성을 보장하는 차량용 네트워크이다. 그러나 기존의 MOST 디바이스는 데이터 제어나 전송을 위해 내부 버스 통신방식인 I2C나 I2S통신 방식만을 사용하여 왔으나, MOST 네트워크의 대역폭이 늘어나고 하나의 디바이스 내에 여러 장치들이 추가되면서 더 넓은 대역폭의 통신방식이 필요하게 되었다. 따라서 본 연구에서는 MediaLB 통신을 사용하여 비동기 데이터 전송 시 효율성 향상 방법을 제시하고, MOST 네트워크에서 비동기 데이터 전송 시에 발생할 수 있는 데이터 신뢰성 문제를 해결하기 위하여 비동기 데이터 영역의 데이터 형태를 개선하여 전송 데이터의 신뢰성을 향상할 수 있는 알고리즘을 제안하고자 한다. MOST(Media Oriented Systems Transport) is a network protocol for vehicle multimedia, where it guarantees large bandwidth and reliability. However, previous MOST device utilized I2C or I2S communication method to data manage or transfer, Bandwidth of MOST have increased and additional equipments are added to one device, requiring a larger form of bandwidth communication method. Therefore, this research suggests of the methods in improving the efficiency of asynchronous data transfer, and suggest an algorithm, which will improve the reliability.
김창영,이홍석,최치규,유영훈,R. Navamathavan,이헌주 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.8
The influence of substrate temperature during plasma-assisted atomic layer deposition (PAALD)of porous low-k SiOC(-H) thin films on p-type Si(100) substrates is reported. Dimethoxydimethylsilane and porogen were used as precursors, and the deposited films were then annealed at 425 ◦C for 1 hour in ambient N2 to remove the porogen. The optical, chemical, and electrical characteristics of the porous low-k SiOC(-H) film were investigated using ellipsometry, Fourier-transform infrared spectroscopy, and capacitance-voltage measurements, respectively. The refractive indices and the dielectric constants of porous low-k SiOC(-H) films showed remarkable decreases and increases with increasing substrate temperature up to 100 ◦C and greater than 150 ◦C, respectively. We also show that for substrate temperatures the open pores can be sealed by using a layer-by-layer deposition method. Furthermore, using PAALD, we developed a novel technique to deposit high-quality,porous low-k SiOC(-H) films and to seal open pores at relatively low substrate temperatures.
김창영,우종관,최치규,R. Navamathavan 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.5
We report on the electrical characteristics for the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(−H) films. The SiOC(−H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced atomic layer deposition (PEALD) system. To improve the structural and the electrical characteristics, we post-treated the SiOC(−H) films deposited using PEALD with ultraviolet (UV) irradiation for various time intervals. The radical intensities in the bulk plasma were observed to be influenced strongly by the radio-frequency (rf) power. A complete dissociation of the trimethylsilane (TMS) precursor took place for rf powers greater than 300 W. As the UV treatment time was increased, the bonding structure of the SiOC(−H) film clearly separated to Si-O-Si and Si-O-C bonds. Also, the fixed charge density and the interface state density on the SiOC(−H)/p-Si(100) interface decreased as the UV treatment time was increased to 6 min. Therefore, we were able to minimize the defects and to reduce the interface charge by adjusting the UV dose.