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RED 시스템을 이용한 상악골 견인술 : 11증례의 고찰
김종렬,송인우,김시엽,황대석,Kim, Jong-Ryoul,Song, In-Woo,Kim, Si-Yeob,Hwang, Dae-Seok 대한악안면성형재건외과학회 2008 Maxillofacial Plastic Reconstructive Surgery Vol.30 No.1
The purpose of this study was to evaluate maxillay distraction for the cleft and other patients who were treated with RED $system^{(R)}$(Martin, Tuttlingen Germany). Eleven patients with severe maxillary hypoplasia who were treated between 2002 and 2007 in the Department of Oral and Maxillofacial surgery, Pusan National University Hospital, are reviewed for this study. Their age at the time of surgery ranged from 7 to 22 years(mean age=15.36 years). Distraction was started at 5 days after Le Fort I or III osteotomy at a rate of 1mm per day for 10 to 20days. All patients used the Rigid External Distraction II system. After distraction was completed, a 2 to 3 months period of consolidation was undertaken. The follow-up period ranged from 1 to 6 years. The mean amount of advancement of the maxilla was 14.2mm(A-point). Relapse, VPI, and local infection around the halo pin were the most common complications. In adult patients, the relapse of maxilla ranged from 21% to 35%. In the growing child, postoperative stability of the maxilla was unstable and unpredictable.
김종렬,황대석,Kim, Jong-Ryoul,Hwang, Dae-Seok 대한악안면성형재건외과학회 2007 Maxillofacial Plastic Reconstructive Surgery Vol.29 No.5
The columella, nasal tip, lip relationship in the secondary bilateral cleft deformity remains an enigma and a great challenge for the cleft surgeon. A subset of patients with bilateral cleft lip still require columellar lengthening and nasal correction, despite the advances in preoperative orthopedics and primary nasal corrections. An approach to correct this deformity is described. This consists of 1) lengthening the columella, 2) open rhinoplasty, allowing definitive repositioning of lower lateral cartilages, ear cartilage grafting to the tip and columella when necessary, 3) nasal mucosal advancement, 4) alar base narrowing and 5) reconstruction of the orbicularis oris as required. In surgical repair of the cleft lip nose, the timing of the operation(during lip closure, before or after the puberty growth sput), and the operative technique play a key role in the final result. In this study, 13 cleft lip patients who had undergone a secondary cheilorhinoplasty at the Department of Oral and Maxillofacial Surgery, Pusan National University Hospital were evaluated to check the proper time and method of the operation.
Co/Ti이중박막을 이용한 $CoSi_2$에피박막형성에 관한 연구
김종렬,배규식,박윤백,조윤성,Kim, Jong-Ryeol,Bae, Gyu-Sik,Park, Yun-Baek,Jo, Yun-Seong 한국재료학회 1994 한국재료학회지 Vol.4 No.1
전자빔 증착법을 사용하여 10nm두께의 Ti과 18nm두께의 Co를 Si(100)기판에 증착한 후, $N_{2}$분위기에서 $900^{\circ}C$, 20초 급속 열처리하여, Co/Ti 이중금속박막의 역전을 유도함으로서 $CoSi_{2}$박막을 형성하였다. 4점 탐침기로 측정한 면저항은 3.9Ω/ㅁ 었으며, 열처리 시간을 증가해도 이값은 유지하여 열적 안정성을 나타내었다. XRD 결과는 형성된 실리사이드는 기판과 에피관계를 갖는 $CoSi_{2}$상 임을 보였으며, SEM 사진은 평탄한 표면을 나타내었다. 단면 TEM 사진은 기판위에 형성된 박막층은 70nm 두께의 $CoSi_{2}$ 에피박막과 그위에 두개의 C0-Ri-Si합금층등 세개의 층으로 되어 있음을 보였다. AES 분석은, 기판상의 자연산화막을 형성할 수 있었음을 보여주었다. AES분석은, 기판상의 잔연산화막이 열처리초기, Ti에 의해 제거된후 Co가 원자적으로 깨끗한 Si기판에 확산하여 $CoSi_{2}$에피박막을 형성할 수 있었음을 보여주었다. $700^{\circ}C$, 20초 + $900^{\circ}C$, 20초 이중 열처리를 한 경우, $CoSi_{2}$결정성장으로 면저항값은 약간 낮아졌으나, 박막의 표면과 계면이 거칠었다. 이 $CoSi_{2}$에피박막의 실제 소자에의 적용방안과 막의 역전을 통한 에피박막형성의 기제를 열역학 및 kinetics 관점에서 고찰하였다. Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.