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In-line 마그네트론 스퍼터 장치를 사용하여 산소 분위기에서 제작한 Ag 박막의 특성
구대영,김원목,조상무,황만수,이인규,정병기,이택성,이경석,조성훈,Ku, Dae-Young,Kim, Won-Mok,Cho, Sang-Moo,Hwang, Man-Soo,Lee, In-Kyu,Cheong, Byung-Ki,Lee, Taek-Sung,Lee, Kyeong-Seok,Cho, Sung-Hun 한국재료학회 2002 한국재료학회지 Vol.12 No.8
A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.
GaAs 나노입자 크기에 따른 SiO<sub>2</sub> 혼합박막의 구조적 광학적 특성
이성훈,김원목,신동욱,조성훈,정병기,이택성,이경석,Lee, Seong-Hun,Kim, Won-Mok,Sin, Dong-Uk,Jo, Seong-Hun,Jeong, Byeong-Gi,Lee, Taek-Seong,Lee, Gyeong-Seok 한국재료학회 2002 한국재료학회지 Vol.12 No.4
For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.
빔의 입사모드가 금 나노입자의 국소표면플라즈몬 산란광에 미치는 영향
이택성,이경석,김원목,이장교,변석주,Lee, Taek-Sung,Lee, Kyeong-Seok,Kim, Won-Mok,Lee, Jang-Kyo,Byun, Seok-Joo 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.4
Quantitative analysis of optical scattering intensities from a Au nanoparticle with a diameter of 100 nm, which is effected by the localized surface plasmon resonance (LSPR), were numerically carried out by using a dark-field detection scheme on prism basal plane for two different beam incident modes of reflectance (R-mode) and transmittance (T-mode). Two-dimensional finite difference time domain (FDTD) algorithm was adopted, and its applicabilibility was verified by comparing the simulation results with the theoretical ones. Simulation results of the scattered light intensities from a Au nanoparticle revealed that the scattered intensity of the T-mode was much stronger than that of R-mode. Comparison of the calculated results with the theoretical intensity distribution on the prism showed that the scattered intensity is marimized when the evanescent field, which is generated from the interface of prism and air at TIR angle, is coupled with Au nanoparticle.
기판 온도에 따른 수소화된 Al-doped ZnO 박막의 특성 변화
탁성주,강민구,이승훈,김원목,임희진,김동환,Tark, Sung-Ju,Kang, Min-Gu,Lee, Seung-Hoon,Kim, Won-Mok,Lim, Hee-Jin,Kim, Dong-Hwan 한국재료학회 2007 한국재료학회지 Vol.17 No.12
This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{\circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{\circ}C$, resistivity of $3.21{\times}10^{-4}{\Omega}{\cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{\times}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.
KF 후열처리 공정시 CIGS 박막의 Na 원소 존재가태양전지 셀성능에 미치는 영향
손유승(Yu-Seung Son),김원목(Won Mok Kim),박종극(Jong-Keuk Park),정증현(Jeung-hyun Jeong) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.4
The high efficiency cell research processes through the KF post deposition treatment (PDT) of the Cu(In,Ga)Se₂(CIGS) thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, 400°C changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, 350°C) in the greatly reduced, and in 400°C tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.
대류성 자기조립법을 통한 폴리스티렌 비드 대면적 단일층 형성에 미치는 공정 변수 효과
서안나,최지환,변재철,김원목,김인호,이경석,Seo, Ahn-na,Choi, Ji-Hwan,Pyun, Jae-chul,Kim, Won Mok,Kim, Inho,Lee, Kyeong-Seok 한국재료학회 2015 한국재료학회지 Vol.25 No.12
Self-assembled monolayers(SAM) of microspheres such as silica and polystyrene(PS) beads have found widespread application in photonic crystals, sensors, and lithographic masks or templates. From a practical viewpoint, setting up a high-throughput process to form a SAM over large areas in a controllable manner is a key challenging issue. Various methods have been suggested including drop casting, spin coating, Langmuir Blodgett, and convective self-assembly(CSA) techniques. Among these, the CSA method has recently attracted attention due to its potential scalability to an automated high-throughput process. By controlling various parameters, this process can be precisely tuned to achieve well-ordered arrays of microspheres. In this study, using a restricted meniscus CSA method, we systematically investigate the effect of the processing parameters on the formation of large area self-assembled monolayers of PS beads. A way to provide hydrophilicity, a prerequisite for a CSA, to the surface of a hydrophobic photoresist layer, is presented in order to apply the SAM of the PS beads as a mask for photonic nanojet lithography.
실리콘 이종접합 태양전지 특성에 대한 Zn 도핑된 ITO 박막의 일함수 효과
이승훈,탁성주,최수영,김찬석,김원목,김동환,Lee, Seung-Hun,Tark, Sung-Ju,Choi, Su-Young,Kim, Chan-Seok,Kim, Won-Mok,Kim, Dong-Hhwan 한국재료학회 2011 한국재료학회지 Vol.21 No.9
Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.