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인쇄 / 소결 방법에 의한 CdS 광전도 셀 제작과 특성
정태수,김택성,정철훈,이훈,신영진,홍광준,유평렬 ( Tae Soo Jeong,Taek Sung Kim,Cheol Hoon Jeong,Hoon Lee,Yeong Jin Shin,Kwang Joon Hong,Pyeong Yeol Yu ) 한국센서학회 1998 센서학회지 Vol.7 No.5
We fabricated a photoconductive cell made of polycrystalline CdS thick film which has high photo-sensitivity using a print/sintering method. The resultant grain size is about 4 ㎛. When CuCl₂ of 0.06 to 0.12 mg is added, the sensitivity and the ratio of photocurrent to dark current are 0.8 and 10³, respectively. The response wavelength is 511 nm. The rise and decay response times are 50 and 20 ms, respectively. In addition, the maximum power dissipation is beyond 80 mW. We noticed that the addition of CuCl₂ between 0.06 and 0.12 mg to 1g of CdS results in a reliable formation of photoconductive sensor.
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정태수 한국영화학회 1999 영화연구 Vol.- No.15
Ⅰ. One's base of existence has great effect on all his artistic actions. It is necessary that a great director's historical and cultural background should be examined first 'in order to study him and his works. This is applied to Andrei Tarkovsky. The core of his film aesthetics consists in lifestyle, philosophy and aesthetics peculiar to Russia. Therefore, Andrei Tarkovsky's film aesthetics should be understood in view of the huge stream and change of Russia's intellectual tradition. Ⅱ. Time frame is a key to understand Andrei Tarkovsky's film aesthetics. In all his works, he makes certain time structure. That is, he uses past, present and future in his films. Just as Ivan's Childhood Solaris and The Mirror are related to past history and moral truth, so Stalker and Nostalgia are to mankind's inner world from the present, and Sacrifice to the future. Tarkovsky's time, however, can be taken from fact in the movie, which is strengthened by the proper use of news film. News film with fact works as an effective method to express Russian people's universal value. Tarkovsky is dealing with fact by news film, and, in tum, Russian people's history and philosophy by the fact. This kind of objective fact is made up of inner structure of Tarkovsky's films. In other words, his subjective recognition of time builds up the objective fact in his films totally. Associated with many individual ingredients inherent in his films, factual ingredients makes inter-organic relations with events and actions in the films. In this way, time means a condition connecting the past, present and future of Tarkovsky himself and Russian people. Ⅲ. Russia's icon, one of spatial background of Andrei Tarkovsky's films has an important aesthetic meaning. Icon symbolizes Russians' hardships, desire and future hope through long history, further their moral principles of the future. Thus, Icon is used as a symbolic implication in Tarkovsky's films. Icon is the overlapped expression of unity, reconcilation and love beyond hostility and hatred, which he consistently claims in all his films. Icon in Russia carry the ultimate meaning of human salvation to the present uneasy world made through historical time in his films. He found the solution of accomplishing the ultimate goal of human salvation within Russia's cultural and artistic category, and realized great expectation of human salvation on the basis of Russia's culture and arts in all his films. Ⅳ. Andrei Tarkovsky is one of the artists who identified themselves with a part of Russian people and culture. He is similar to the Russian Intelligentsias in that they wouldn't give way in conflict with Russian autocratic government. Especially, the aim of Tarkovsky's films is what Dostoevski insisted on in 19 century, human salvation through inner revolution. Tarkovsky intended to accomplish the salvation of human beings, Russia and the world itself through the exploration of man's inner world. His vision is as original as Dostoevski's though distant from that of 19 century Socialism. Likewise, he took his vision from Russia's intellectual tradition, which is the revolution for human salvation from man's inner world. In result, he can never be free from Russia's intellectual tradition as well as Dostoevski. Ⅴ. Andrei Tarkovsky is the director who removed the doubt that films can work for moral and ethical accomplishment as art. His world in films is enormous and wide, and based on philosophy and aesthetics inherent in Russian Intelligentsias which get people together and make one. He greatly wished his own works to make people become one. That is the very vision of Tarkovsky's films and Russia itself.
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정태수,유평열,신영진,신현길,김택성,정철훈,이훈,신영신,홍광준,유기수 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
승화방법으로 광전도체의 CdS 단결정을 성장하였고 외삽법으로 구한 a_o와 c_o 의 격자상수 값은 각각 4.1318Å과 6.7122Å임을 알았다. Hall 측정값으로 부터 상온에서의 CdS 단결정의 운반자 농도와 이동도는 각각∼10^23m^-3과 2.93×10 exp (-2)㎡/V sec 이였으며 온도에 따른 이동도 변화는 33 K에서 150 K까지는 T^1/2 에 따라 증가하는 경향이 있고 180 K 에서 상온까지는 T^-2에 따라 감소한 경향이 나타났다. 광전류 측정으로 부터 나타난 단파장대의 봉우리는 진성전이에 기인하는 봉우리였으며 이 봉우리의 에너지값은 CdS 광전도체에 에너지 밴드 갭과 동일한 값을 나타냄을 알았다. A CdS single crystal was grown by using sublimation method. Lattice constants, a_o and c_o , obtained by using extrapolation were 4.1318 Å and 6.7122 Å, respectively. The carrier density was∼10^23m^-3 and the mobility was 2.93×10 exp (-2)㎡/V-sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to T^1/2 from 33 K to 150 K and a decreasing tendency in proportion to T^-2 from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.
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정태수,유평렬,최용대,이기선,오병성,윤만영,윤창주 한국물리학회 2002 새물리 Vol.44 No.1
The defects of ZnSe/GaAs epilayers treated in vacuum and in Zn, and Seatmospheres, and grown by using hot wall epitaxy were investigated by means of photoluminescence measurements at 10 K. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the photoluminescence spectrum of the as-grown ZnSe epilayer were found to be consistent, respectirely with the upper and the lower polariton peaks of the exciton, I$_2$ (D$^\circ$, X), bounded to the neutral donor associated with the Sevacancy. The exciton peak, I$_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponding to the Znvacancy. This acceptor-impurity binding energy was calculated to be 268 meV. The I$_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Seatmosphere. This Se-atmosphere treatment is thought to convert the ZnSe/GaAs:Se epilayer into a p-type and the SA peak was found to be related to complex defects such as (V$_{Se}$-V$_{Zn}$)-V$_{Zn}$. HWE 방법으로 성장된 ZnSe/GaAs 박막은 진공과 Zn, Se 분위기 등에서 열처리되었고 이들의 10 K에서의 광발광 측정을 통하여 막 성장된 ZnSe 박막에 대한 결함이 논의되었다. 막 성장된 ZnSe 박막의 광발광 측정으로부터 얻어진 2.7988 eV과 2.7937 eV에서 우세한 봉우리들은 각각 upper polariton I$_2^U$와 lower polariton I$_2^L$로 중성 주개 bound exciton I$_2$ (D$^\circ$,X)이며 그 기원은 V$_{Se}$로 연상된다. 또한 2.7812 eV에서 I$_1^d$의 exciton 봉우리는 V$_{Zn}$에 대응하는 중성 받개 bound exciton 발광으로 확인되었다. 중성 받개 bound exciton으로부터 얻어진 받개 불순물의 결합 에너지는 268 meV이였다. I$_1^d$ 봉우리는 Se 분위기 열처리를 한 ZnSe/GaAs:Se 박막에서 우세하게 관측되었는데 이것은 Se 분위기 열처리가 ZnSe/GaAs:Se 박막에서 p-형 반전이 일어나도록 한 것으로 여겨진다. 또한 SA 발광은 (V$_{Se}$-V$_{Zn}$)-V$_{Zn}$과 같은 복합적인 결함과 관련이 있음을 알았다.
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정태수,김현숙,유평렬,신영진,신현길,김택성,정철훈,이훈,신영신,강신국,정경수,홍광준 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-
수직 2단 전기로를 제작하고 결정성장관에 꼬리관을 연결하여 seed 결정 없이 승화 방법으로 CdS 결정을 성장하였다. 이때 시료부분과 성장부분의 온도차 ΔT가 이론적인 값 14.7℃와 비교해서 실험적으로 얻은 값이 15℃로 아주 일치하는 값을 나타내었다. 이때 꼬리관의 온도를 110℃로 시간당 0.38mm 정도로 빨리 결정성장관을 끌어 올려 결정을 성장하였다. 분말법의 X-선 회절무늬와 Laue 배면 반사법의 Laue 무늬로 부터 성장된 결정이 육방정이고 결정성장관의 길이 방향으로 c축을 갖는 단결정임을 확인하였다. 또한 CdS 단결정은 상온에서 전자 이동도와 운반자 밀도는 각각 316㎠/V·sec와 2.90× 10 exp (16)cm^-3 정도이였다. We has made 2-zone vertical electric furnace and has been grown CdS single crystal by sublimation method in crystal growth tube with tail tube without seed crystal for growth. While it has been growing, temperature difference ΔT of source and growth part has nearly agreed with theoritical value 14.7℃ and experimental value 15℃. Then, crystal of best quality has been grown, when temperature of tail tube has been 110℃, in spite of quickly pulling up crystal growth tube a degree 0.38mm per hour. The grown crystal have had hexagonal structure and single crystal with c-axis to length of crystal growth tube from X-ray diffraction pattern of powder method and Laue pattern of back reflection Laue method. Also, the mobility and carrier density from Hall effect measurement have been 316㎠/V·sec and 2.90× 10 exp (16)cm^-3 at the room temperature, respectively.
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