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이온 보존 반응법에 의하여 표면처리된 Polyimide(PI) 표면과 구리박막의 접착력 향상
최성창,석진우,최원국,손용배,정형진,고석근 한국마이크로전자및패키징학회 1997 하이브리드마이크로일렉트로닉스 Vol.4 No.1
Polyimide films are modified by Ar^+ion beam at 1 kV in an oxygen environments. Amounts of ions changed from 5 x 10^(15) to 1 x 10^(17) ions /㎠ and amounts of blowing oxygen from 0 to 8 sccm ml /min. The wettabilities and the surface free energies of modified polyimide were measured by a contact angle meter and the chemical state of the modified polyimide surface was measured by x-ray photoelectron spectroscopy. The wetting angles between water and polyimide films modified by Ar^+ ion without oxygen blowing decrease from 67 to 40 degrees and surface free energies increase from 46 to 64 dyne /㎠. The wetting angle of polyimide films modified by Ar^+ ion in an oxygen environments decrease to 12 degree and surface free energy increase to 72 dyne /㎠. Polyimide surface was modified with various gas environments and ions. Lowest wetting angle was obtained by oxygen ion irradiation in an oxygen gas environment and its value was 8°. In the case of polyimide film modified by Ar^+ ions in an oxygen environment, the wetting angle increase up to 65° when it kept in air and that increase up to 46° when it kept in water after 110 hour. In the case of polyimide film modified by O^+ ions in an oxygen environment, however, the wetting angle of polyimide film dose not increase. From the x-ray photoelectron analysis, it is found that the chemical bonds between polyimide components are severed by ion irradiation and hydrophilic groups such as (C=O)-(ON)-, COH and (C=O)-C are formed by the reaction between newly formed radicals and blowing oxygen. I t was found that the adhesion between Cu and polyimide modified by ion assisted reaction was improved, and the main reason of the enhanced adhesion is due to the reaction between Cu and C-O groups formed by ion assisted reaction on the polyimide surface.