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Electrical conductivity enhancement of epitaxially grown TiN thin films
Khim Yeong Gwang,Park Beomjin,Heo Jin Eun,Khim Young Hun,Khim Young Rok,Gu Minseon,Rhee Tae Gyu,Chang Seo Hyoung,Han Moonsup,Chang Young Jun 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.82 No.5
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin flms on MgO (111), sapphire (001), and mica substrates at 640℃ and room temperature by using a DC sputtering, respectively. The epitaxial flms show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial flms show drastically reduced resistivity (~ 30 micro-ohm-cm), much smaller than the polycrystalline flms. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high-temperature growth of TiN thin flms leads to signifcant enhancement of electrical conductivity, promising for durable and scalable electrode applications.
Controlling the magnetic properties of layered Cr₂Te₃ ultra-thin film via ex-situ annealing
In Hak Lee,Yeong Gwang Khim,Jae Un Eom,Jung Yun Kee,Hyuk Jin Kim,Byoung Ki Choi,Min Jay Kim,Younghak Kim,Byeong-hyeon Lee,Sung Ok Won,Hoyoung Suh,Hye Jung Chang,Ryung Kim,Minyoung Jung,Kyeong Jun Lee 한국자기학회 2022 한국자기학회 학술연구발표회 논문개요집 Vol.32 No.2
Kim Ryung,Choi Byoung Ki,Lee Kyeong Jun,Kim Hyuk Jin,Lee Hyun Hwi,Rhee Tae Gyu,Khim Yeong Gwang,Chang Young Jun,Chang Seo Hyoung 한국물리학회 2023 Current Applied Physics Vol.46 No.-
Vanadium diselenide (VSe2) has intriguing physical properties such as unexpected ferromagnetism at the two-dimensional limit. However, the experimental results for room temperature ferromagnetism are still controversial and depend on the detailed crystal structure and stoichiometry. Here we introduce crystal truncation rod (CTR) analysis to investigate the atomic arrangement of bilayer VSe2 and bilayer graphene (BLG) heterostructures grown on a 6H–SiC(0001) substrate. Using non-destructive CTR analysis, we were able to obtain electron density profiles and detailed crystal structure of the VSe2/BLG heterostructures. Specifically, the out-of-plane lattice parameters of each VSe2 layer were modulated by the interface compared to that of the bulk VSe2 1T phase. The atomic arrangement of the VSe2/BLG heterostructure provides deeper understanding and insight for elucidating the magnetic properties of the van der Waals heterostructure.