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      • KCI등재

        회로면적에 효율적인 3 GHz CMOS LNA설계

        전희석,윤여남,송익현,신형철 대한전자공학회 2007 電子工學會論文誌-SD (Semiconductor and devices) Vol.44 No.10

        This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 ㎓ CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a 0.18 ㎛ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to present a size efficient CMOS LNA design method while still retaining the circuit operation characteristics. 본 논문에서는 vertical shunt symmetric inductor를 이용하여 CMOS LNA의 설계에 있어서 회로의 면적을 줄이는 설계기술 및 구현에 관한 내용을 제시하고자 한다. 본 연구에 있어서 vertical shunt symmetric inductor는 LNA의 입력단과 출력단을 3GHz로 정합하기 위해서 사용되었다. 이렇게 구현된 보다 면적에 있어서 효율적인 증폭기를 0.18um digital logic공정으로 구현되었다. 본 논문에서는 일반적으로 LNA에서 사용하고 있는 inductor를 이용하는 경우와, vertical shunt symmetric inductor를 이용하여 LNA를 설계하는 경우에 대한 부분을 비교하였고, 최종적으로 면적에 효율적인 회로설계 기술을 제시하고자 한다.

      • Size-Efficient 3 GHz CMOS LNA

        전희석,윤여남,송익현,신형철,Jhon, Hee-Sauk,Yoon, Yeo-Nam,Song, Ick-Hyun,Shin, Hyung-Cheol The Institute of Electronics and Information Engin 2007 電子工學會論文誌-CI (Computer and Information) Vol.44 No.10

        본 논문에서는 vertical shunt symmetric inductor를 이용하여 CMOS LNA의 설계에 있어서 회로의 면적을 줄이는 설계기술 및 구현에 관한 내용을 제시하고자 한다. 본 연구에 있어서 vertical shunt symmetric inductor는 LNA의 입력단과 출력단을 3GHz로 정합하기 위해서 사용되었다. 이렇게 구현된 보다 면적에 있어서 효율적인 증폭기를 0.18um digital logic공정으로 구현되었다. 본 논문에서는 일반적으로 LNA에서 사용하고 있는 inductor를 이용하는 경우와, vertical shunt symmetric inductor를 이용하여 LNA를 설계하는 경우에 대한 부분을 비교하였고, 최종적으로 면적에 효율적인 회로설계 기술을 제시하고자 한다. This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 GHz CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a $0.18\;{\mu}m$ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to efficient a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.

      • KCI등재

        마이크로파 소자응용을 위한 YBCO 박막의 두께 및 증착온도에 관한 특성연구

        전희석,허창회,한경보,전창훈,이상렬 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.6

        The effect of the superconducting film thickness on the surface resistance has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature. The microwave properties of the films with mixed orientations of a-axis and c-axis will be reported for the applications of microwave devices.

      • Low Cost CMOS LNA Design Using On-Chip Size Efficient Inductors

        전희석(Hee-Sauk Jhon),송익현(Ickhyun Song),윤여남(Yeonam Yun),구민석(Minsuk Koo),정학철(Hakchul Jung),신형철(Hyungcheol Shin) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11

        This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using size efficient inductors. We applied vertical shunt symmetric and helical inductor to match the input and output in 2.4 ㎓ CMOS LNA to reduce the circuit area. In this paper, the case of conventional LNA using asymmetric inductor, and that of ones using vertical shunt symmetrical and helical inductor with a relatively higher number of turns have been compared in order to present a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.

      • KCI등재

        Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions

        임인희,전희석,윤규한,최우영 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.1

        Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (ΔLch) and threshold voltage shift (∆Vth). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

      • 지연성 후두방사선괴사에 대한 고찰

        홍기환,김연우,전희석,양윤수 대한기관식도과학회 2002 大韓氣管食道科學會誌 Vol.8 No.1

        Radiation therapy is an effective treatment modality for malignant disease of the head and neck, but it is not without risk and complication. Response of the larynx to radiotherapy varies from mild erythema to severe inflammation with edema and induration. possibly leading to necrosis of cartilage. These changes are due to an inflammatory reaction characterized by infiltration of polymorphonuclear leukocytes, vascular thrombosis, and obliteration of lymphatic channels. Late changes consist of telangiectasia of the skin, alopecia, loss of subcutaneous fat, degenerative changes in the connective tissues. But, radiation necrosis of laryngeal cartilage is an uncommon complication and it is a devastating process for which further necessitates surgical treatment. It is generally agreed that the only treatment for patient not responding to conservative measures is a total laryngectomy. We experienced 4 cases of delayed radionecrosis of the larynx who underwent radiation therapy for glottic cancer and hypopharyngeal cancer. We report these cases with review of literature.

      • KCI등재

        새열낭종에서 기원한 편평세포암종 1예

        양윤수,오정기,전희석,홍기환 대한이비인후과학회 2004 대한이비인후과학회지 두경부외과학 Vol.47 No.12

        The hypothesis that primary branchiogenic carcinoma originates from a branchial cleft cyst is controversial since the entity was first described in 1882. In 1950, stringent criteria were established for the diagnosis of primary branchiogenic carcinoma, the most important criterion being histologic proof of carcinoma arising from a normal cyst epithelium. Only a limited number of cases have successfully fulfilled these criteria. In this article, we describe a case of squamous cell carcinoma arising in the second branchial cleft cyst and also discuss the diagnosis, histopathologic features, and therapeutic options.

      • KCI등재

        펄스레이저 증착법으로 제작된(Pb<sub>0.72</sub>,La<sub>0.28</sub>)Ti<sub>0.93</sub>O<sub>3</sub>박막의 수소후열처리에 관한 전기적 특성 연구

        한경보,전창훈,전희석,이상렬 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.3

        Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

      • KCI등재

        부갑상선 선종 4예의 수술적 치료

        양윤수,최승철,전희석,홍기환 대한이비인후과학회 2003 대한이비인후과학회지 두경부외과학 Vol.46 No.10

        Parathyroid adenoma is an uncommon disease in Korea. However, the frequency of this disease has slowly increased with routine measurement of serum calcium and increasing awarenes by the public of hyperparathyroidism in recent years. We have experi-me of surgical treatment retrospectively. Four cases were diagnosed by persistent elevation of serum calcium and parathyroid hormone. They presented asymptomic clinical symptoms, osteoporosis/ osteodeficiency, or renal stone, gastrointestinal disturbance or neck mass. Parathyroid lesions were detected preoperatively by ultrasonography, thyroid scanning or neck computerized tomographic imaging in three of them. The tumor locations were left lower in two cases and right lower in two cases. Al patients received guideline for beter diagnostic strategies, proper surgical management and follow-up study for recurence in the primary hyperpa-rathyroidism. (Korean J Otolaryngol 2003 ;46 :890-5)

      • Quinacridone 기반의 고분자반도체를 유기전계효과트랜지스터 및 회로에 활용한 연구

        김태양,안태규,박찬언,전희석,송호준 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0

        소형 유기반도체 및 공액구조의 고분자 반도체는 기계적으로 유연하며 대면적화 공정이 가능하고 이를 적용한 유기전계효과트랜지스터의 전기적 성능이 향상되면서 대면적의 플렉시블 디스플레이 같은 실용적인 분야에 사용될 수 있다. 지금까지 개발 된 다양한 반도체 물질 중 quinacridone 유닛을 기본으로 한 공중합체는 유기전계효과트랜지스터에서 활성 물질로 사용하기 적합한데, electron-donating nitrogens와 electron-withdrawing carbonyl group 모두 존재로 인해 큰 쌍극자로 인하여 강한 π-π interchain stacking을 유도 할 수 있어 박막 상태에서 전자 비편재화를 극대화 할 수 있다. 우리는 quinacridone 과 quaterthiophene의 공중합체인 PQCQT 고분자를 이용해 유기전계효과트랜지스터를 제작하고 단위소자의 특성을 측정하였고 이를 바탕으로 효과적인 회로 구성 요소로 사용 될 수 있음을 나타내는 수치 회로 시뮬레이션을 수행하였다.

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