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Comparison of Ga-doped and Ag-doped ZnO Nanowire Gas-sensor Sensitivity and Selectivity
이상렬 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.6
Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.
이상렬,박용진 대한전자공학회 2004 電子工學會論文誌 IE (Industry electronics) Vol.41 No.02
On designing the key recoverable cryptosystem, we split the key into four pieces and stored the key pieces separately at one LEA and three KRA institutions to enhance the safety of the key recovery. In result any one institution cannot recover the key without other institution's help. And even though any one institution is destroyed by the hacking etc., the suggested cryptosystem can recover the key. We proposed the key escrow procedure, the key recovery procedure and the legal eavesdropping procedure using the ElGamal encryption method which can split and merge the key and verify the possibility of the key recovery easily. 키복구가 가능한 암호시스템을 설계함에 있어 키복구의 안전성을 최대한 높이기 위하여 키를 네 조각으로 나누어 법집행기관(LEA) 한 곳과 키복구기관(KRA) 세 곳으로 분산 보관하도록 하였다. 이로서 특정 한 기관이 단독으로 키복구를 할 수 없게 하였으며 또한 세 개의 KRA중 어느 한 곳이 해킹 등의 이유로 파괴되더라도 키복구가 가능하도록 하였다. 키의 분할과 합병 그리고 위탁키의 키복구 가능성 검증을 쉽게 하기 위하여 ElGamal 암호 방식을 이용하여 키위탁 절차, 키복구 절차 그리고 합법적인 감청 절차를 제안하였다.
이상렬,박용진 대한전자공학회 2004 電子工學會論文誌 IE (Industry electronics) Vol.41 No.01
As the importance of security has been recently emphasized, electronic commercial and financial transaction on PKI(Public Key Infrastructure) become popular. On non face to face situation the authentication is very important. On PKI we must verify the certificate prior to any transaction for authentication. We have been using CRL(Certificate Revocation List) or OCSP(Online Certificate Status Protocol) but there are some problems that realtime certificate status is not available on CRL and that OCSP server is overloaded on a large scale PKI. In this paper we propose the protocol that realtime certificate status validation and mutual authentication are possible without CRL and OCSP on a large scale PKI with multiple CA(Certification Authority) on the hierarchical validation path, and then propose the protocol that can reduce the load of a server generated by validating the certificates of clients on client-server environment. 최근 보안의 중요성이 부각되면서 PKI(Public Key Infrastructure) 환경에서의 전자상거래 및 금융거래가 활성화되고 있다. 상대방을 대면하지 않은 상태의 거래에서는 상대방의 신원확인이 매우 중요하다. PKI 환경에서는 신원확인을 위해서 거래에 앞서 반드시 상대방의 인증서 유효성 검증을 해야한다. 현재 인증서 검증을 위해 CRL(Certificate Revocation List)이나 OCSP(Online Certificate Status Protocol) 방법들을 많이 이용하고 있으나 CRL은 실시간 인증서 상태 검증이 불가능하고 OCSP는 규모가 큰 PKI 환경에서는 서버의 과부하 문제가 있다. 본 논문에서는 인증경로가 계층적인 다중 CA(Certification Authority) 구조의 대규모 PKI 보안시스템에서 CRL이나 OCSP를 이용하지 않고서도 실시간 인증서 상태 검증이 가능하고 상호 신원확인이 가능한 프로토콜 및 클라이언트-서버 환경에서 클라이언트들의 인증서를 검증함으로 인하여 발생되는 서버의 부담을 줄여줄 수 있는 프로토콜을 제안한다.
Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process
이상렬,강태현,한상민,이영선,최준영 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.1
Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect ofannealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibitedsaturation mobility of 1.37 cm2 /Vs, a threshold voltage of -7.2 V, and an on-off ratio of 1.1 × 105.
이상렬 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.3
The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed,by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A D0X peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased,because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.