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여임규,이태우,최정우,서정두,구갑렬,이원재,신병철,김영희,Yeo, Im-Gyu,Lee, Tae-Woo,Choi, Jung-Woo,Seo, Jung-Doo,Ku, Kap-Ryeol,Lee, Won-Jae,Shin, Byung-Chul,Kim, Young-Hee 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.5
The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.
여임규,이태우,이원재,신병철,최정우,구갑렬,김영희 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.2
In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with 0.1-0.2 μm and 1-10 μm, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about 1017 cm3 were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.
여임규,이재윤,전명철,Yeo, Im Gyu,Lee, Jae Yoon,Chun, Myong Chuel 한국결정성장학회 2022 한국결정성장학회지 Vol.32 No.5
This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm<sup>2</sup> and resistivity characteristics was 0.015~0.020 ohm·cm<sup>2</sup>, commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.
Effect of Polarity on a SiC Crystal Grown on a SiC Dual-seed Crystal by Using the PVT Method
박종휘,이원재,양우성,정정영,이상일,박미선,신병철,여임규,은태희,Seung-Seok Lee,Myong-Chuel Chun 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
SiC crystal ingots were grown on 4H-SiC dual-seed crystals by using a physical vapor transport (PVT) technique, and SiC crystal wafers and cross sections sliced from the SiC ingot were systematically investigated to find the polarity dependence of the crystal polytype. The growth rate of the SiC crystal grown in this study was about 0.15 mm/hr. N-type 2-inch SiC crystals exhibiting 4H- and 6H-SiC polytypes were successfully fabricated on the C-face and the Si-face, respectively. As the growth of the SiC crystal ingot proceeded, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region grown on the Si-face seed crystal. The incorporation of nitrogen donors and the growth rate in the SiC crystals grown on the C-face seed crystal were be higher than those in SiC crystals grown on a Si-face crystal.
고품질 4H-SiC 단결정 성장을 위한 다공성 흑연 판의 역할
이희준,이희태,신희원,박미선,장연숙,이원재,여임규,은태희,김장열,전명철,이시현,김정곤,Lee, Hee-Jun,Lee, Hee-Tae,Shin, Hee-Won,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Yeo, Im-Gyu,Eun, Tai-Hee,Kim, Jang-Yul,Chun, Myoung-Chul,Lee, Si-Hyun 한국결정성장학회 2015 한국결정성장학회지 Vol.25 No.2
본 연구에서는 PVT법으로 4H-SiC 단결정 성장 시 다공성 흑연판을 사용하여 Si/C 비율이나 온도구배, 물질전달의 향상시킴으로써 고품질의 SiC 단결정 기판 제작을 목적으로 연구를 진행하였다. 연구에 사용된 SiC 소스 물질은 흑연 도가니에 넣어 흑연 단열재로 쌓인 구조로 실험을 하였다. 성장온도는 $2100{\sim}2300^{\circ}C$, 그리고 성장압력은 10~30 Torr의 압력으로 아르곤과 질소 분위기에서 성장시켰다. 종자정은 2인치의 $4^{\circ}$ off-axis 4H-SiC의 C면 (000-1)을 사용하였고 다공성 흑연판은 SiC 소스 물질 위에 삽입하였다. 4H-SiC 결정다형 안정화를 위한 C-rich 조건이나 균일한 온도구배를 만들어주기 위해 다공성 흑연판을 삽입하여 실험을 진행하였다. 일반적인 도가니의 경우, 성장된 wafer에서 6H-, 15R-SiC와 같은 다양한 결정다형이 관찰된 반면에 다공성 흑연판을 삽입한 도가니에서는 4H-SiC만 관찰되었다. 또한 다공성 흑연판을 삽입한 도가니에서 성장된 결정에서 MP나 EP의 낮은 결함밀도를 보였으며 결정성 또한 향상된 것을 학인하였다. The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.