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Selenization 압력조건에 따른 CuInSe2 박막 물성 변화
박광훈 ( Gwang Hoon Park ),고영희 ( Young Hee Ko ),고항주 ( Hang Ju Ko ),하준석 ( Jun Seok Ha ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.3
We studied the physical properties of CuInSe2(CIS) thin films fabricated using a cracked selenium (Se) source in the selenization processes. The crystalline CIS films were characterized by energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), and a Hall effect measurement system. Precursors with the same amount of Se were prepared with a co-sputtering system equipped with Se Knudsen cells. The precursors were heated under four kinds of Se pressure conditions (0.02, 0.1, 1, 2 Pa) for 15 minutes at 425 ℃, which is a selenization process for crystalline CIS films. The low Se pressure conditions in selenization processes were more reactive than the higher Se pressure conditions. The Se pressure in selenization tends to increase the CIS grain size, which was confirmed by investigation of the surface morphology of SEM and of the crystal size in the XRD. We found that the Se pressure in the selenization processes influences the preferred crystalline orientations and the electrical properties of CIS thin films.(Received May 8, 2014)
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