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여임규,이태우,최정우,서정두,구갑렬,이원재,신병철,김영희,Yeo, Im-Gyu,Lee, Tae-Woo,Choi, Jung-Woo,Seo, Jung-Doo,Ku, Kap-Ryeol,Lee, Won-Jae,Shin, Byung-Chul,Kim, Young-Hee 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.5
The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.
새로운 가이드 튜브를 통한 6H-SiC 단결정의 직경 확장에 관한 연구
손창현,최정우,이기섭,황현희,최종문,구갑렬,이원재,신병철,Son, Chang-Hyun,Choi, Jung-Woo,Lee, Gi-Sub,Hwang, Hyun-Hee,Choi, Jong-Mun,Ku, Kap-Ryeol,Lee, Won-Jae,Shin, Byoung-Chul 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.9
A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.
도가니 구조 변경을 통한 6H-SiC 단결정의 직경 확장에 관한 연구
김정규,견명옥,서정두,안준호,김정곤,구갑렬,이원재,김일수,신병철,Kim, Jung-Gyu,Kyun, Myung-Ok,Seo, Jung-Doo,An, Joon-Ho,Kim, Jung-Gon,Ku, Kap-Ryeol,Lee, Won-Jae,Kim, Il-Soo,Shin, Byoung-Chul 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.7
A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.
여임규,이태우,이원재,신병철,최정우,구갑렬,김영희 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.2
In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with 0.1-0.2 μm and 1-10 μm, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about 1017 cm3 were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.
Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method
Jung-Gon Kim,Chang-Hyun Son,Jung-Woo Choi,Jung-Kyu Kim,Byoung-Chul Shin,Il-Soo Kim,S. Nishino,이원재,서정두,구갑렬 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.5
6H-SiC single crystal ingots grown by using the sublimation physical vapor transport (PVT) technique were prepared on two-seed crystals with opposite face polarities; then, SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the 2-inch SiC crystal grown in this study was about 0.3 mm/hr. n-type 200 SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was shown to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal; finally a SiC crystal having only a C-face was obtained. X- ray rocking curves and reciprocal space mappings (RSM) definitely revealed a better crystal quality for the SiC crystal grown on the C-face seed crystal than for the SiC crystal grown on the Si-face. 6H-SiC single crystal ingots grown by using the sublimation physical vapor transport (PVT) technique were prepared on two-seed crystals with opposite face polarities; then, SiC crystal wafers sliced from the SiC ingot were systematically investigated to find out the polarity dependence of the crystal quality. The growth rate of the 2-inch SiC crystal grown in this study was about 0.3 mm/hr. n-type 200 SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The incorporation of nitrogen donors in the SiC crystals grown on the C-face seed crystal was shown to be higher than in SiC crystals grown on a Si-face crystal. When the SiC crystal ingot proceeded to grow, the SiC crystal region grown on the C-face seed crystal was enlarged compared to the SiC crystal region on the Si-face seed crystal; finally a SiC crystal having only a C-face was obtained. X- ray rocking curves and reciprocal space mappings (RSM) definitely revealed a better crystal quality for the SiC crystal grown on the C-face seed crystal than for the SiC crystal grown on the Si-face.