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N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석
오세경,신홍식,강민호,복정득,정의정,권혁민,이가원,이희덕,Oh, Se-Kyung,Shin, Hong-Sik,Kang, Min-Ho,Bok, Jeong-Deuk,Jung, Yi-Jung,Kwon, Hyuk-Min,Lee, Ga-Won,Lee, Hi-Deok 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.4
In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.
저온 공정 PVP게이트 절연체를 이용한 고성능 플렉서블 유기박막 트랜지스터의 계면처리 효과
윤호진,백규하,신홍식,이가원,이희덕,도이미,Yun, Ho-Jin,Baek, Kyu-Ha,Shin, Hong-Sik,Lee, Ga-Won,Lee, Hi-Deok,Do, Lee-Mi 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.1
In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.
Atomic Layer Deposition으로 증착된 Al-doped ZnO Film의 전기적, 구조적 및 광학적 특성 분석
임정수,정광석,신홍식,윤호진,양승동,김유미,이희덕,이가원,Lim, Jung-Soo,Jeong, Kwang-Seok,Shin, Hong-Sik,Yun, Ho-Jin,Yang, Seung-Dong,Kim, Yu-Mi,Lee, Hi-Deok,Lee, Ga-Won 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{\circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{\times}10^{-2}{\Omega}{\cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{\circ}C$ demonstrates the superior resistivity ($1.237{\times}10^{-4}{\Omega}{\cdot}cm$).
Ge-MOSFETs을 위한 Ni-Co 합금을 이용한 Ni-germanide의 열안정성 개선
박기영,정순연,장잉이,한인식,이세광,종준,신홍식,김영철,김재준,이가원,왕진석,이희덕,Park, Kee-Young,Jung, Soon-Yen,Zhang, Ying-Ying,Han, In-Shik,Li, Shi-Guang,Zhong, Zhun,Shin, Hong-Sik,Kim, Yeong-Cheol,Kim, Jae-Jun,Lee, Ga-Won,Wang, Jin 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.
고성능 PMOSFET을 위한 Ni-silicide와 p+ Source/drain 사이의 Barrier Height 감소
공선규,장잉잉,박기영,이세광,정순연,신홍식,이가원,왕진석,이희덕,Kong, Sun-Kyu,Zhang, Ying-Ying,Park, Kee-Young,Li, Shi-Guang,Jung, Soon-Yen,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.6
In this paper, barrier height between Ni-silicide and source/drain is reduced utilizing Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. It is shown that the barrier height is decreased by Pd incorporation and is dependent on the Pd thickness. Therefore, Ni-silicide using the Pd stacked structure is promising for high performance nano-cale PMOSFET.
Strained-Si PMOSFET에서 디지털 및 아날로그 성능의 캐리어 방향성에 대한 의존성
한인식(In-Shik Han),복정득(Jung-Deuk Bok),권혁민(Hyuk-Min Kwon),박상욱(Sang-Uk Park),정의정(Yi-Jung Jung),신홍식(Hong-Sik Shin),양승동(Seung-Dong Yang),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 大韓電子工學會 2010 電子工學會論文誌-SD (Semiconductor and devices) Vol.47 No.8
본 논문에서는 각각 다른 캐리어 방향성을 가지는 strained-silicon PMOSFET에서 소자의 디지털 및 아날로그 성능을 비교 평가 하였다. 캐리어 방향이 〈100〉을 갖는 소자의 경우 이동도 향상에 의해서 〈110〉방향의 소자 보다 우수한 드레인 구동 전류 및 출력저항 특성을 보이지만, NBTI 신뢰성과 소자의 matching 특성은 반대로 다소 열화 됨을 확인 하였다. 따라서 나노미터급 CMOSFET에서 캐리어 방향성을 이용한 이동도 향상 기술의 적용을 위해서는 DC 성능을 비롯한 신뢰성 및 아날로 그 특성을 모두 고려하는 것이 반드시 필요하다고 할 수 있다. In this paper, comparative analysis of digital and analog performances of strained-silicon PMOSFETs with different carrier direction were performed. ID.SAT vs. ID.OFF and output resistance, Rout performances of devices with 〈100〉 carrier direction were better than those of 〈110〉 direction due to the greater carrier mobility of 〈100〉 channel direction. However, on the contrary, NBTI reliability and device matching characteristics of device with 〈100〉 carrier direction were worse than those with 〈110〉 carrier direction. Therefore, simultaneous consideration of analog and reliability characteristics as well as DC device performance is highly necessary when developing mobility enhancement technology using the different carrier direction for nano-scale CMOSFETs.
申弘湜 제주한라대학 1976 論文集 Vol.2 No.-
English teaching as foreign language in Korea lasts for six years constantly from the 1st year of middle school to the 3rd year of high school. But in fact it does not achieve the expected results in spite of their perpetual efforts and a long period of time. It is the public opinion that the expressive ability is especially poor among the fields of English studying. Why is the expressive skill so poor then? As one of the reasons, it is said that, that English teachers have made practical application of the traditional methods of teaching, in other words grammar-translation methods of teaching have made the students be so poor of their expressive skill that they should select the aural-oral methods of teaching in having their English classes. I think it is true, too. But I try to inquire into one of the reasons from the side of evolution of valuational method in English teaching with this Study. As the result of this research I have found it more useful way to apply the essay type of examination than to do the objective type test in order to improve English ability of the students. But if they are inclined to apply to essay type of examination in all, of course there is fear that they lose the objectivity for the result of valuation, and that they have the intricacy and diminution of efficiency for examination marks. As yet they are all the matters of transaction for the results of valuation, therefore, in order to raise the public confidence for education, to correct the students' easygoing way of studying, and to progress the educational level, it is proper that we should overcome the difficulties like them above, and should apply the essay type of examination by breaking from the objective type test.
人文系高等學校 英語 Ⅰ·Ⅱ 新單語 使用頻度 調査 : 韓國能力開發社刊 HIGH SCHOOL ENGLISH Ⅰ·Ⅱ에서
申弘湜 제주한라대학 1980 論文集 Vol.6 No.-
This study was made to go far toward solving the problem of vocabularies in learning English practically. The words recorded at the end table of this research are 2246 in all, in which 1196 words are given from High School English Ⅰ, and 1050 words are from High School English Ⅱ, Each new word 1s counted and checked on frequency in use in the text books. The words recorded as data for this research were collected from the List of New Words at the end of the text books “High School English ⅠㆍⅡ” by Lee Maengsung & Hwang Juckryoon, published at Hangook Neungryeok Gaebal Co. Seoul in 1979. According to this study the result is as follows : 1) In English classes the instructor can emphasize some words with a higher or lower use frequency more than other ones by knowing the use frequency of the words shown in this study. 2) English instrnctors in college are able to have a thorough grasp of the level and ability in vocabularies of the students graduated from high school. 3) To have an achievement test in English to freshman, this will throw some light on selecting Engligh vocabularies in giving them questions for examination. 4) This will also help the students to discriminate between the vocabularies to have been taught and those not to be taught, and it will animate the motive to stuby English.
申弘湜 제주한라대학 1975 論文集 Vol.1 No.-
This study was made to contribute to solving the problem of vocabularies in learning English practically. According to this study the results were summarized as follows: 1) In English classes the instructors can easily make a point of teaching vocabularies by understanding how high or low frequency of use a vocabulary has had in high school English Ⅱ. 2) English instructors in higher educational facilities can obviously grasp a level or ability on vocabularies of the students who were graduated from high school. 3) In presenting questions of college entrance examination, this will throw some light on selecting the vocabularies of English. 4) This will also have to help the students to discriminate the vocabularies which have been taught from the others, and it will animate the motive to study English.