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A Gated Twin-Bit (GTB) Nonvolatile Memory Device and Its Fabrication Method
Seongjae Cho,Il Han Park,Yoon Kim,Se Hwan Park,Jong Duk Lee,Hyungcheol Shin,Byung-Gook Park IEEE 2009 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.8 No.5
<P>In this study, a nonvolatile memory (NVM) device of novel structure in three-dimension is introduced and validated. It is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between silicon pillars can be reduced, in which additional gates called cutoff gates realize perfect operations. Gated twin-bit (GTB) NVM device is considered as the ultimate form of 3-D NVM device based on double-gate structure in a sense that the use of common gate makes maximal integration possible. The operation schemes and fabrication method of the GTB NVM device are also introduced.</P>
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
Seongjae Cho,Kyung Rok Kim,Byung-Gook Park,In Man Kang IEEE 2011 IEEE transactions on electron devices Vol.58 No.5
<P>This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency <I>fT</I>, gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated <I>Y</I>-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of <I>fT</I>.</P>
C. S. Peirce on First, Feeling, and Consciousness
Seongjae Kim 고려대학교 응용문화연구소 2013 에피스테메 Vol.0 No.10
Peirce’s rhematic iconic qualisign challenges the community of Peirce scholars in mainly three ways: First, ontologically, it merely exists as a pure possibility. Second, epistemologically, it is never perceived as itself, but it must always be embodied in a sinsign. Third, it seems impossible for a researcher to communicate a scientific research about it. This paper tries to overcome these difficulties by suggesting a possible case of the rhematic iconic qualisign; the humming sound of pianist Glenn Gould. Peirce’s definition of the First in its relation to feeling and consciousness is provided as the theoretical ground of this case study. The dominance of the First in Gould’s humming sound gives rise to a conclusion that music’s essence is its firstness, namely the quality of feeling.
Volatile and Nonvolatile Memory Devices for Neuromorphic and Processing-in-memory Applications
Seongjae Cho 대한전자공학회 2022 Journal of semiconductor technology and science Vol.22 No.1
The motivation for driving semiconductor devices can be found in the development of advanced computers which can contribute to the betterment in our daily lives. The contribution has been largely made by semiconductor logic devices traveling the pavements identified as technology nodes for device shrinkage that enables high-speed and low-power operations. Lighter and faster processors are the everlasting goals in electronics and computer science, and have been concerned with logic technologies. However, the vast amount of data that should be dealt are consistently requiring an innovative way out of the conventional serial data communication and processing. Data need to be processed in a shorter time but the irreducibilities in logic switching time, data propagation time in metallic interconnection accompanying RC delay, and the time amount spent in the serial communication between logic and memory units should be quenched. It is quite hard to control the former two factors which are largely determined by physical limits and fabrication technology ones in recent days but the latter still has room for reduction by novel devices and architectures specifically designed for maximizing the parallelism in data processing and communication. The semiconductor memories let aside the advancements in processor technologies now is being moved to the center of renovation toward the future computers in the ultimate architecture. In this review, the roles and requirements of semiconductor memories for memory-oriented processors are investigated in the highlights of applications in the neuromorphic system and processing-in-memory (PIM) architectures.
Seongjae Cho,Hyungjin Kim,Min-Chul Sun,Byung-Gook Park,James S. Harris Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 ㎓ at an operating voltage of 1 V was obtained.
Seongjae Cho,Il Han Park,Jung Hoon Lee,Yun Kim,Hyungcheol Shin,Byung-Gook Park 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7
In this work, analytical modeling of channel potential and surface charge density for gate-all-around (GAA) and silicon nanowire (SNW) MOSFET devices. It is postulated that the silicon channel is undoped or very lightly doped under arbitrary surface potential. Based on the radial potential functions, channel and center potentials are investigated with variation on silicon channel radius and surface potentials. Furthermore, surface charge density is induced from the resultant analytic function. The modelings have been performed by fully solving the cylindrical Poisson’s equation without consideration of quantum effects, and the results are graphitized by MATLAB, a mathematical tool.