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조성재,Shinichi O’uchi,Kazuhiko Endo,김상완,Younghwan Son,Meishoku Masahara,James S. Harris, Jr.,박병국,강인만 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT)model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Lee, Jae-Sung,Cho, Seong-Jae,Park, Byung-Gook,Harris, James S. Jr.,Kang, In-Man The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.2
In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.
Cho, Seong-Jae,O'uchi, Shinichi,Endo, Kazuhiko,Kim, Sang-Wan,Son, Young-Hwan,Kang, In-Man,Masahara, Meishoku,Harris, James S.Jr,Park, Byung-Gook The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Process Considerations for 80-GHz High-Performance p-i-n SiliconPhotodetectorforOpticalInterconnect
조성재,김형진,성민철,박병국,James S. Harris, Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 GHz at an operating voltage of 1 V was obtained.
조용범,조성재,박병국,James S. Harris, Jr. 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the Γ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make Ge1-xSnx alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of Ge1-xSnx alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of Ge1-xSnx with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of Ge1-xSnx, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
Immune correlates of protection for dengue: State of the art and research agenda
Katzelnick, Leah C.,Harris, Eva,Baric, Ralph,Coller, Beth-Ann,Coloma, Josefina,Crowe Jr., James E.,Cummings Jr., Derek A.T.,Dean Jr., Hansi,de Silva Jr., Aravinda,Diamond Jr., Michael S.,Durbin Jr., A Elsevier 2017 Vaccine Vol.35 No.36
<P><B>Abstract</B></P> <P>Dengue viruses (DENV1-4) are mosquito-borne flaviviruses estimated to cause up to ∼400 million infections and ∼100 million dengue cases each year. Factors that contribute to protection from and risk of dengue and severe dengue disease have been studied extensively but are still not fully understood. Results from Phase 3 vaccine efficacy trials have recently become available for one vaccine candidate, now licensed for use in several countries, and more Phase 2 and 3 studies of additional vaccine candidates are ongoing, making these issues all the more urgent and timely. At the “<I>Summit on Dengue Immune Correlates of Protection</I>”, held in Annecy, France, on March 8–9, 2016, dengue experts from diverse fields came together to discuss the current understanding of the immune response to and protection from DENV infection and disease, identify key unanswered questions, discuss data on immune correlates and plans for comparison of results across assays/consortia, and propose a research agenda for investigation of dengue immune correlates, all in the context of both natural infection studies and vaccine trials.</P>
Cho, Yongbeom,Cho, Seongjae,Park, Byung-Gook,Harris, James S. Jr. The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.5
Ge is on increasing demand in the advanced Si-compatible high-speed integrated circuits due to its high carrier mobilities. In particular, its hole mobility is much higher than those of other group-IV and III-V compound semiconductor materials. At the same time, Ge has the local minimum at the ${\Gamma}$ valley, which enables the utilization for optical applications. The fact that Ge becomes a direct-bandgap semiconductor material by applying tensile strain can be a good merit in obtaining higher spontaneous radiation probability. However, engineering the electronic structure of Ge by external mechanical stress through stressors with different thermal expansion coefficients might require a complicated set of processes. Efforts were made to turn it into a direct-bandgap one by incorporating Sn. Carrier mobilities are further enhanced when Sn is substitutionally incorporated into the Ge matrix. Thus, advantageous features are expected in improving both optical and electrical performances. Furthermore, the small bandgap energy and bandgap tunability make $Ge_{1-x}Sn_x$ alloy a promising material for components making up the optical interconnect on Si platform including optical source of near-infrared wavelength. In this work, we study the electrical and optical characteristics of $Ge_{1-x}Sn_x$ alloy as a function of Sn content. To achieve this goal, ab initio calculations of energy-band structures of $Ge_{1-x}Sn_x$ with different Sn fractions have been carried out based on linearized augmented plane wave (LAPW) method with modified Becke-Johnson potential model for more accurate bandgap energy. Then, a novel coding method has been adopted for more reliable overall band structures. The minimum Sn content required for direct- and indirect-bandgap material transition of $Ge_{1-x}Sn_x$, electrical and optical energy bandgaps to investigate the bandgap tunability, as well as effective masses, have been extracted as a function of Sn content. The transition point was found to be 6.9% and succinct reductions of effective masses of electron and hole have been confirmed.
Cho, Seong-Jae,Kim, Hyung-Jin,Sun, Min-Chul,Park, Byung-Gook,Harris, James S. Jr. The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.
Seongjae Cho,Hyungjin Kim,Min-Chul Sun,Byung-Gook Park,James S. Harris Jr. 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.3
In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 ㎓ at an operating voltage of 1 V was obtained.
Chen, Xiaochi,Huo, Yijie,Cho, Seongjae,Park, Byung-Gook,Harris, James S. Jr. The Institute of Electronics and Information Engin 2014 IEIE Transactions on Smart Processing & Computing Vol.3 No.5
Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.