Transcriptomes of major renal collecting duct cell types in mouse identified by single-cell RNA-seq

Chen, Lihe,Lee, Jae Wook,Chou, Chung-Lin,Nair, Anil V.,Battistone, Maria A.,Pă,unescu, Teodor G.,Merkulova, Maria,Breton, Sylvie,Verlander, Jill W.,Wall, Susan M.,Brown, Dennis,Burg, Maurice B. National Academy of Sciences 2017 PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF Vol.114 No.46

<P><B>Significance</B></P><P>A long-term goal in mammalian biology is to identify the genes expressed in every cell type of the body. In the kidney, the expressed genes (i.e., transcriptome) of all epithelial cell types have already been identified with the exception of the cells that make up the renal collecting duct, which is responsible for regulation of blood pressure and body fluid composition. Here, single-cell RNA-sequencing was used in mouse to identify transcriptomes for the major collecting duct cell types: type A intercalated cells, type B intercalated cells, and principal cells. The information was used to create a publicly accessible online resource. The data allowed identification of genes that are selectively expressed in each cell type, which is informative for cell-level understanding of physiology and pathophysiology.</P><P>Prior RNA sequencing (RNA-seq) studies have identified complete transcriptomes for most renal epithelial cell types. The exceptions are the cell types that make up the renal collecting duct, namely intercalated cells (ICs) and principal cells (PCs), which account for only a small fraction of the kidney mass, but play critical physiological roles in the regulation of blood pressure, extracellular fluid volume, and extracellular fluid composition. To enrich these cell types, we used FACS that employed well-established lectin cell surface markers for PCs and type B ICs, as well as a newly identified cell surface marker for type A ICs, c-Kit. Single-cell RNA-seq using the IC- and PC-enriched populations as input enabled identification of complete transcriptomes of A-ICs, B-ICs, and PCs. The data were used to create a freely accessible online gene-expression database for collecting duct cells. This database allowed identification of genes that are selectively expressed in each cell type, including cell-surface receptors, transcription factors, transporters, and secreted proteins. The analysis also identified a small fraction of hybrid cells expressing aquaporin-2 and anion exchanger 1 or pendrin transcripts. In many cases, mRNAs for receptors and their ligands were identified in different cells (e.g., <I>Notch2</I> chiefly in PCs vs. <I>Jag1</I> chiefly in ICs), suggesting signaling cross-talk among the three cell types. The identified patterns of gene expression among the three types of collecting duct cells provide a foundation for understanding physiological regulation and pathophysiology in the renal collecting duct.</P>

Design a steam chamber to avoid over gelatinization thus producing straight and single form of rice noodles strings

M.K.A. Shanika(M.K.A. Shanika ),K.S. Kumararathna(K.S. Kumararathna ),S.B. Navarathne(S.B. Navarathne ),V.S. Jayamanne(V.S. Jayamanne ) 한국축산식품학회 2022 Food and Life Vol.2022 No.3

Over gelatinization of extruded rice noodles during open wet steam cooking is a major problem in the food processing industry and occurs due to the condensation of water droplets that come into contact with noodle strings during the steaming process. This issue may arise due to the presence of stuck noodles in the finished product. Therefore, 5 prototype designs; wooden frame enclosed with polythene sheet (A), wooden frame enclosed with gray cloth (B), wooden frame enclosed with a plywood sheet with two steam inlets in the galvanized door (C), wooden frame enclosed with plywood sheet with multiple steam inlets in the galvanized door (D), and completely enclosed galvanized chamber were made (E). All steam chambers had multiple steam inlets in lateral walls except the chamber with gray cloth. Red rice noodles were prepared from the combination (16% w/w moisture, 200 μm, water at ambient temperature (30±2℃), control atmosphere, 20 min) and fed into five different types of prototype designs to complete the cooking (gelatinization) process. The performance of the five prototype designs was evaluated in terms of the percentage of dried noodles coming out of each design in a single straight form. According to the results, the percentage of dried noodles coming out of each design was (A-50.0±7.1%, B-15.0±5.0%, C-15.0±5.0%, D-50.0±7.1%, E-77.5±4.3% w/w) analyzed. The mean values of all designs revealed that the effective prototype design was “design E” (steam chamber consisted of a completely enclosed galvanized chamber with multiple steam inlets in the two lateral sides). It was able to produce a higher percentage of straight single noodles when compared to other designs. In conclusion, design E is the effective steam chamber to produce straight single rice noodles for the market. The design of a steam chamber is also a very important aspect to avoid over gelatinization thus producing straight and single form of rice noodles strings.

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

Polyakov, A.Y.,Smirnov, N.B.,Govorkov, A.V.,Markov, A.V.,Sun, Q.,Zhang, Y.,Yerino, C.D.,Ko, T.S.,Lee, I.H.,Han, J. Elsevier 2010 Materials science & engineering. B, Advanced funct Vol.166 No.3

Electrical properties, deep traps spectra and luminescence spectra were studied for two undoped a-plane GaN (a-GaN) films grown on r-plane sapphire using metalorganic chemical vapor deposition and differing by structural perfection. For sample A, the a-GaN film was directly deposited on AlN buffer. A two-step growth scheme was implemented for sample B, including an initial islanding growth stage and a subsequent enhanced lateral growth. Preliminary detailed X-ray analysis showed that the stacking faults density was 8x10<SUP>5</SUP>cm<SUP>-1</SUP> for sample A and 1.7x10<SUP>5</SUP>cm<SUP>-1</SUP> for sample B. Electrical properties of a-GaN films were largely determined by deep traps with a level near E<SUB>c</SUB> -0.6eV, with other prominent traps having the activation energy of 0.25eV. The Fermi level was pinned by the E<SUB>c</SUB> -0.6eV deep traps for sample A, but shifted to the vicinity of the shallower 0.25eV traps for sample B, most likely due to the reduced density of the 0.6eV traps. This decrease of deep traps density is accompanied by a very pronounced improvement in the overall luminescence intensity. A correlation of the observed improvement in deep traps spectra and luminescence efficiency with the improved crystalline quality of the films is discussed.

2G HTS wire with enhanced engineering current density attained through the deposition of HTS layer with increased thickness

Markelov, A.,Valikov, A.,Chepikov, V.,Petrzhik, A.,Massalimov, B.,Degtyarenko, P.,Uzkih, R.,Soldatenko, A.,Molodyk, A.,Sim, Kideok,Hwang, Soon The Korea Institute of Applied Superconductivity a 2019 한국초전도저온공학회논문지 Vol.21 No.4

2G HTS wire with high engineering current density is desired for applications where compact, high power density superconducting equipment is important. We have succeeded in enhancing engineering current density of commercial SuperOx 2G HTS wire based on GdBCO by increasing the HTS layer thickness without fast degradation of the HTS film microstructure. This was possible after improving the temperature uniformity along the HTS film deposition zone. In particular, the wire engineering current density was increased from 700-770 A/㎟ (for a 65 ㎛-thick wire without stabilisation) or 430-480 A/㎟ (for a 105 ㎛-thick stabilised wire) at the beginning of this study to almost 1200 A/㎟ (for a 67 ㎛-thick wire without stabilisation) or 770 A/㎟ (for a 107 ㎛-thick stabilised wire) at completion of this study.

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

Polyakov, A. Y.,Jang, Lee-Woon,Smirnov, N. B.,Govorkov, A. V.,Kozhukhova, E. A.,Yugova, T. G.,Reznik, V. Y.,Pearton, S. J.,Baik, Kwang Hyeon,Hwang, Sung-Min,Jung, Sukkoo,Lee, In-Hwan American Institute of Physics 2011 JOURNAL OF APPLIED PHYSICS - Vol.110 No.9

<P>The electrical properties, presence of deep electron and hole traps and photoluminescence spectra were measured for undoped a-GaN films grown by metal-organic chemical vapor deposition (MOCVD) in a two-stage process using a high V/III ratio at the first stage and low V/III ratio at the second stage. Growth was performed on r-sapphire substrates with a high temperature GaN nucleation layer. The films showed a full width at half maximum of 450-470 arcseconds for the (11-20) x-ray rocking curve with little anisotropy with respect to the sample rotation around the growth direction. The stacking fault (SF) density determined by selective etching was similar to 5 x 10(4) cm(-1). The residual donor concentration was 10(14)-10(15) cm(-3), with a very low density (2.5 x 10(13) cm(-3)) of electron traps located at E-c - 0.6 eV, which are believed to be one of the major non-radiative recombination centers in nonpolar GaN. Consequently, the films showed a high intensity of bandedge luminescence with negligible contribution from defect bands associated with SFs. In contrast to previously studied nonpolar GaN films, the a-GaN layers showed a high concentration of gallium-vacancy-related acceptors near E-v + 1 eV and a strong yellow luminescence band, both indicating that growth conditions were effectively N-rich. a-AlGaN/GaN heterojunctions with thin heavily Si doped AlGaN barriers made on a-GaN substrates showed two-dimensional electron gas (2DEG) concentrations of 1.2 x 10(13) cm(-3), with 2DEG mobility of 80 cm(2)/Vs. Capacitance-voltage profiling of Schottky diodes on these HJs suggest that the 2DEG is fully depleted by the built-in voltage of the Schottky diode. (C)2011 American Institute of Physics. [doi: 10.1063/1.3658026]</P>

Search for B→hνν¯ decays with semileptonic tagging at Belle

Grygier, J.,Goldenzweig, P.,Heck, M.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bahinipati, S.,Bakich, A. M.,Bansal, V.,Barberio, E.,Behera, P.,B American Physical Society 2017 Physical Review D Vol.96 No.9

<P>We present the results of a search for the rare decays B -> h nu(nu) over bar, where h stands for K+, K-S(0), K*(+); K*(0); pi(+); pi(0), rho(+) and rho(0). The results are obtained with 772 x 10(6) B (B) over bar pairs collected with the Belle detector at the KEKB e(+)e(-) collider. We reconstruct one B meson in a semileptonic decay and require a single h meson but nothing else on the signal side. We observe no significant signal and set upper limits on the branching fractions. The limits set on the B-0 -> K-S(0)nu(nu) over bar, B-0 -> K*(0)nu(nu) over bar, B+ -> pi(+)nu(nu) over bar, B-0 -> pi(0)nu(nu) over bar, B+ -> rho(+)nu(nu) over bar, and B-0 -> rho(0)nu(nu) over bar channels are the world's most stringent.</P>

Measurement of the decayB→Dℓνℓin fully reconstructed events and determination of the Cabibbo-Kobayashi-Maskawa matrix element|Vcb|

Glattauer, R.,Schwanda, C.,Abdesselam, A.,Adachi, I.,Adamczyk, K.,Aihara, H.,Al Said, S.,Asner, D. M.,Aushev, T.,Ayad, R.,Aziz, T.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Bhuyan, B.,Biswal, American Physical Society 2016 Physical Review D Vol.93 No.3

<P>We present a determination of the magnitude of the Cabibbo-Kobayashi-Maskawa matrix element vertical bar V-cb vertical bar using the decay B -> Dl nu(l) (l = e,mu) based on 711 fb(-1) of e(+)e(-) -> Upsilon(4S) data recorded by the Belle detector and containing 772 x 10(6) B (B) over bar pairs. One B meson in the event is fully reconstructed in a hadronic decay mode, while the other, on the signal side, is partially reconstructed from a charged lepton and either a D+ or D-0 meson in a total of 23 hadronic decay modes. The isospin-averaged branching fraction of the decay B -> Dl nu(l) is found to be B(B-0 -> D(-)l(vertical bar)nu(l)) = (2.31 +/- 0.03(stat) +/- 0.11(syst))%. Analyzing the differential decay rate as a function of the hadronic recoil with the parametrization of Caprini, Lellouch, and Neubert and using the form-factor prediction G(1) = 1.0541 +/- 0.0083 calculated by FNAL/MILC, we obtain eta(EW)vertical bar V-cb vertical bar = (40.12 +/- 1.34) x 10(-3), where eta(EW) is the electroweak correction factor. Alternatively, assuming the model-independent form-factor parametrization of Boyd, Grinstein, and Lebed and using lattice QCD data from the FNAL/MILC and HPQCD collaborations, we find eta(EW)vertical bar V-cb vertical bar = (41.10 +/- 1.14) x 10(-3).</P>

Measurement of the branching ratio of B¯0→D*+τ−ν¯τ relative to B¯0→D*+ℓ−ν¯ℓ decays with a semileptonic tagging method

Sato, Y.,Iijima, T.,Adamczyk, K.,Aihara, H.,Asner, D. M.,Atmacan, H.,Aushev, T.,Ayad, R.,Aziz, T.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Biswal, J.,Bonvicini American Physical Society 2016 Physical review. D Vol.94 No.7

<P>We report a measurement of the ratio R(D*) = B((B) over bar (0) -> D*(+)tau(-)(nu) over bar (tau))/B((B) over bar (0) -> D*(+)l(-)(nu) over bar (l))where l denotes an electron or a muon. The results are based on a data sample containing 772 x 10(6) B (B) over bar pairs recorded at the Upsilon(4S) resonance with the Belle detector at the KEKB e(+)e(-) collider. We select a sample of B-0(B) over bar (0) pairs by reconstructing both B mesons in semileptonic decays to D*(-/+)l(+/-). We measure R(D*) = 0.302 +/- 0.030(stat) +/- 0.011(syst), which is within 1.6 sigma of the Standard Model theoretical expectation, where the standard deviation sigma includes systematic uncertainties. We use this measurement to constrain several scenarios of new physics in a model-independent approach.</P>

Measurements of the absolute branching fractions of B+→Xcc¯K+ and B+→D¯(*)0π+ at Belle

Kato, Y.,Iijima, T.,Adachi, I.,Aihara, H.,Al Said, S.,Asner, D. M.,Aulchenko, V.,Aushev, T.,Ayad, R.,Babu, V.,Badhrees, I.,Bakich, A. M.,Bansal, V.,Barberio, E.,Behera, P.,Bhardwaj, V.,Bhuyan, B.,Bisw American Physical Society 2018 Physical Review D Vol.97 No.1

<P>We present the measurement of the absolute branching fractions of B+ -> Xc (c) over barK+ and B+ -> (D) over bar ((*)0)pi(+) decays, using a data sample of 772 x 10(6) B (B) over bar pairs collected at the gamma(4S) resonance with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider. Here, X-c (c) over bar denotes eta(c), J/psi, chi(c0), chi(c1), eta(c) (2S), psi(2S), psi(3770), X(3872), and X(3915). We do not observe significant signals for X(3872) or X(3915) and set the 90% confidence level upper limits at B(B+ -> X(3872)K+) < 2.6 x 10(-4) and B(B+ -> X(3915)K+) < 2.8 x 10(-4). These represent the most stringent upper limit for B(B+ -> X(3872)K+) to date and the first limit for B(B+ -> X(3915)K+). The measured branching fractions for eta(c) and eta(c)(2S) are the most precise to date, B(B+ -> eta K-c(+)) = (12.0 +/- 0.8 +/- 0.7) x 10(-4) and B(B+ -> eta(c)(2S)K+) = (4.8 +/- 1.1 +/- 0.3) x 10(-4), where the first and second uncertainties are statistical and systematic, respectively.</P>

Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

B. Prasanna Lakshmi,M. Siva Pratap Reddy,A. Ashok Kumar,V. Rajagopal Reddy 한국물리학회 2012 Current Applied Physics Vol.12 No.3

The temperature-dependent electrical properties of Au/SiO2/n-GaN metal-insulator-semiconductor (MIS)structure have been investigated in the temperature range of 120e390 K. Anomalous strong temperature dependencies of the barrier height (φbo), ideality factor (n), interface state density (NSS) and series resistance (RS) are obtained. Such behaviour is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (GD BHs) at the interface. It is evident that the diode parameters such as zero-bias barrier height increases and the ideality factor decreases with increasing temperature. The values of series resistance that are obtained from Cheung’s method is decreasing with increasing in temperature. The temperature-dependent currentevoltage characteristics of the MIS diode have been shown a double Gaussian distribution giving mean barrier heights of 0.38 eV and 1.06 eV and standard deviations of 0.0561 and 0.2742 V, respectively. A modified ln (Io/T2) - q2so 2/2k2T2 versus 103/T plot for the two temperature regions gives 4bo and A* as 0.55 eV and 11.56 A cm-2 K-2, and 1.02 eV and 23.48 A cm-2 K-2 respectively. The Interface state density values are calculated by IeV and CeV measurements at different temperatures using Terman’s method. It is observed that the interface state density decreases with increase in temperature (120e390 K). Therefore, it has been concluded that the temperature dependence of the forward IeV characteristics of the Au/SiO2/n-GaN Schottky diodes can be explained with a double GD of the BHs.