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Polyakov, A. Y.,Jang, Lee-Woon,Smirnov, N. B.,Govorkov, A. V.,Kozhukhova, E. A.,Yugova, T. G.,Reznik, V. Y.,Pearton, S. J.,Baik, Kwang Hyeon,Hwang, Sung-Min,Jung, Sukkoo,Lee, In-Hwan American Institute of Physics 2011 JOURNAL OF APPLIED PHYSICS - Vol.110 No.9
<P>The electrical properties, presence of deep electron and hole traps and photoluminescence spectra were measured for undoped a-GaN films grown by metal-organic chemical vapor deposition (MOCVD) in a two-stage process using a high V/III ratio at the first stage and low V/III ratio at the second stage. Growth was performed on r-sapphire substrates with a high temperature GaN nucleation layer. The films showed a full width at half maximum of 450-470 arcseconds for the (11-20) x-ray rocking curve with little anisotropy with respect to the sample rotation around the growth direction. The stacking fault (SF) density determined by selective etching was similar to 5 x 10(4) cm(-1). The residual donor concentration was 10(14)-10(15) cm(-3), with a very low density (2.5 x 10(13) cm(-3)) of electron traps located at E-c - 0.6 eV, which are believed to be one of the major non-radiative recombination centers in nonpolar GaN. Consequently, the films showed a high intensity of bandedge luminescence with negligible contribution from defect bands associated with SFs. In contrast to previously studied nonpolar GaN films, the a-GaN layers showed a high concentration of gallium-vacancy-related acceptors near E-v + 1 eV and a strong yellow luminescence band, both indicating that growth conditions were effectively N-rich. a-AlGaN/GaN heterojunctions with thin heavily Si doped AlGaN barriers made on a-GaN substrates showed two-dimensional electron gas (2DEG) concentrations of 1.2 x 10(13) cm(-3), with 2DEG mobility of 80 cm(2)/Vs. Capacitance-voltage profiling of Schottky diodes on these HJs suggest that the 2DEG is fully depleted by the built-in voltage of the Schottky diode. (C)2011 American Institute of Physics. [doi: 10.1063/1.3658026]</P>
Electrical properties and radiation detector performance of free-standing bulk n-GaN
Lee, I.-H.,Polyakov, A.Y.,Smirnov, N.B.,Govorkov, A.V.,Kozhukhova, E.A.,Zaletin, V.M.,Gazizov, I.M.,Kolin, N.G.,Pearton, S.J. American Vacuum Society 2012 Journal of vacuum science and technology. material Vol.30 No.2
Alpha particle detection with GaN Schottky diodes
Polyakov, A. Y.,Smirnov, N. B.,Govorkov, A. V.,Markov, A. V.,Kozhukhova, E. A.,Gazizov, I. M.,Kolin, N. G.,Merkurisov, D. I.,Boiko, V. M.,Korulin, A. V.,Zalyetin, V. M.,Pearton, S. J.,Lee, I.-H.,Dabir American Institute of Physics 2009 JOURNAL OF APPLIED PHYSICS - Vol.106 No.10
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
Polyakov, A. Y.,Jang, Lee-Woon,Jo, Dong-Seob,Lee, In-Hwan,Smirnov, N. B.,Govorkov, A. V.,Kozhukhova, E. A.,Hyeon Baik, Kwang,Hwang, Sung-Min American Institute of Physics 2012 JOURNAL OF APPLIED PHYSICS - Vol.111 No.3