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장지근,김민영,장호정,김장기 단국대학교 1997 論文集 Vol.31 No.-
Pt thin films with the thickness of about 3000Å have been deposited on the Ti/SiO_2/Si structures in a variety of process conditions by DC magnetron sputtering method followed by the in-situ annealing at 500℃ for 30 minutes and/or the rapid thermal annealing at 650℃ for 20 seconds. As the result of experiments, only the Pt films deposited at room temperature in the atmosphere of Ar showed the [200] preferred orientation after the in-situ annealing regardless to the following rapid thermal annealing The XRD analysis exhibited the orientation rate of 53% with FWHM of 0.6° for the (200) peak in the in-situ annealed sample deposited at room temperature and Ar ambient showing a little increase of the [200]-orientation rate according to the following rapid thermal annealing. From the SEM micrographs, the as-deposited Pt films was observed after post-annealing.
장지근,김장기,김민영 단국대학교 신소재기술연구소 1991 신소재 Vol.1 No.-
위성전원용 태양전지로 사용할 수 있는 새로운 구조의 FAH-전지로부터 효율파라미터 특성이 입사 광전력의 세기(I=20∼1000 mW/㎠)와 온도 (T=0∼140℃)에 따라 어떻게 변화되는가를 측정하고 이 결과를 분석하였다. 일정한 온도(T=30℃)에서 광세기가 증가할 때 FAH-전지의 개방전압(V_oc)은 20∼200 mW/㎠ 범위에서 v_oc=0.66+0.067·log(I/20) [V]로, 200∼600mW.㎠ 에서는 V-oc=0.727+0.04·log(I/200) [V]의 관계로 증가하는 특성을 나타내고 600 mW/㎠ 이상에서는 0.75 [V]로 포화되었다. 충실도(F·F)는 100mW/㎠ 이하에서 F·F=0.815∼0.0858·log(I/20)으로, 300 mW/㎠이상에서는 F·F=0.65∼0.5164·log(I/300)의 관계로, 광세기에 따라 감소하는 특성을 보였다. T=30℃일 경우 전지의 효유(EFF.)은 100mW/㎠이하의 광세기에서 거의 일정한 값으로 나타나고(EFF.≒EFF_*ref=EFF.|I=100 mW/㎠) 300mW/㎠ 이상의 광세기에서는 EFF.=Eff_*ref·[0.9-0.412·log(I/300)]로 효율이 급격히 저하되었다. 또한 일정한 광세기(I=100 mW/㎠)에서 단락전류(I_se는 온도가 증가함에 따라 단조증가하며 T<30℃에서 dI_se/dT=0.0006 mA/℃로 나타났다. 개방전압의 감소율은 전체 측정온도 범위(T=0∼140℃)에서 dV_oc/dT=-0.002 V/℃로 나타났으며, 충실도(F·F)는 T=0∼20℃, 20∼90℃, 90∼140℃의 각 영역에서 -0.275%/℃, -0.1357%/℃, -0.1 %/℃의 율로 감소하였다. 전지의 효율은 T=30℃의 갑(EFF. |T=30℃=EFF.ref)을 기준할 때 T<20℃에서 EFF.=EFF.ref·[1-0.0034·(T-30)]의 관계로 나타나고 그 이하의 온도에서는 효율이 1.05·EFF.ref의 값으로 포화되는 현상을 보였다. The effect of light intensity(I=20∼1000mW/㎠) and temperature(T=0∼140℃) on the efficiency parameters of a new FAH-solar cell is exeprimentally and theoretically investigated n this paper. Under the constant temperature(T=30℃), the increase of light intensity gives the open circuit voltage(V_oc) varing with the relation of 0.66+0.067·log(I/20) [V] and 0.727+0.04·log[I/200] [V] in each range of I=20∼200[mW/㎠] and I=200∼600[mW/㎠]. The open circuit voltage is, however, nearly saturated to 0.75[V] above 600[mW/㎠]. The fill factor is decreased with the relation of 0.815∼0.0858·log[I/20] below 10[mW/㎠ and 0.65-0.5164·log[I/300] above 300[mW/㎠]. The conversion efficiency(EFF.) shows the constant value of EFF-*ref=EFF.|_I=100mW/㎠ below 100[mW/㎠], but decreases with the relation of EFF.=EFF_*ref·(0.9-0.412·log[I/300]) above 300[mW/㎠]. Under the constant light intensity(i=100mW/㎠), the increase of temperature gives the short circuit current increasing with the rate of dI_sc/dT=0.0225[mA/℃] below 30[℃], and dI_sc/dT=0.006[mA/℃] in the range of 30∼140[℃]. The open circuit voltage is decreased with the rate of dV_oc/dT=-0.002[V/℃] The fill factor is decreased with the rate of -0.275[%/℃], -0.1357[%/℃], and -0.1[%/℃] in the ranges of 0∼20[℃], 20∼90[℃], and 90∼140[℃], respectively. The conversion efficiency is decreased with the relation of EFF.=EFF_*ref'·[1-0.0034·(T-30)] above 20[℃], and saturated to 1.05 EFF_*ref' below 20[℃].
고체 도펀트 원을 이용한 실리콘 p-n 확산 접합의 형성
金將起,林聖奎,張志根,金哲晙 단국대학교 1995 論文集 Vol.29 No.-
Diffusion processes of boron and phosphorus into Si were studied with solid planar dopant sources produced by Owens-Illinois company in the semiconductor laboratory of Dankook University. In the experiment, BoronPlus GS-126 and PhosPlus TP-360/TP-470 were used as dopant sources in the boron diffusion and in the phosphorus diffusion, respectively. Experimental results for sheet resistance and doping profile showed a little variables such as the distance between wafer and source, the temperature profile of furnace, the flow rate of carrier gas, etc. A p-n diode having the emitter area of 40 × 40㎛^2 was designed and fabricated for the purpose of the application of experimental data. The fabricated device showed a good electrical characteristics of V_T(turn-on voltage) = 0.7(V), BV(breakdown voltage) = 5.8(V), I_0(reverse saturation current) = 1.93 × 10 exp(-9)(A), and η(ideanlity factor) = 1.8.
Technetium-99m Diisopropyl Iminodiacetic Acid(Tc-99m DISIDA)를 이용한 십이지장위 역류검사
장린,민영일,장영운,우정택,장주희,방익수,박충기,최학림 대한내과학회 1986 대한내과학회지 Vol.30 No.4
For evaluation of diagnostic value and usefulness of the duodenogastric reflux test using Tc-99 m DISIDA in gastric ulcer disease, the scintigraphy was performed in 10 gastric ulcer patients, in 10 duodenal ulcer patients and 15 normal controls at Kyung Hee University Hospital during the period from Nov, 19$4 to SeP 1985. Results are summerized as follow; 1) Duodenogastric reflux was more commonly observed in patients with gastric ulcer than in duodenal ulcer(p$lt;0.25) and normal controls(p$lt;0.01). 2) Total radioactivity of refluxing Tc-99 m DISIDA in patients with gastric ulcer(6.76±3.42%) was higher than that in duodenal ulcer(2.68±2.39%) and normal controls(1.43±0.97%). In conclusion, duodenogastric reflux test using Tc-99m DISIDA can be a useful method to quantify duodenogastric reflux. And duodenogastric reflux may play 'a role in pathogenesis of gastric ulcer disease,
지속성 외래 복막 투석 환자에서 C반응단백과 관상동맥 질환과 사망률
장상필,박정식,김유미,박종하,김순배,정세라,이준승,유지숙,홍창기 대한신장학회 2000 Kidney Research and Clinical Practice Vol.19 No.6
Background: Atherosclerotic vascular disease is major cause of morbidity and mortality in dialysis patients. C-reactive protein(CRP) as a marker of inflammation appears to be clinically useful in prediction of coronary heart disease and mortality. This study is designed to test whether plasma concentration of CRP correlates with coronary heart disease and mortality in CAPD patients. Methods: A total of l37 end-stage-renal disease patients undergoing CAPD were included. The measurement of baseline CRP and stress thallium SPECT were performed in all patients. Patients were followed prospectively from initiation of dialysis to June 1999 for analysis of survival rate and cause of death. Coronary angiography performed in 16 of 32 patients showed all positive results. Results: 32 patients showed positive results in thallium SPECT. The baseline CRP concentration were higher among patients with positive results in thallium SPECT than those with negative results(1.05g/L vs 1.30mg/dL, p$lt;0.001). The survival rate was significantly lower in lower CRP group than higher CRP group (44months vs 26 months, p$lt;0.001). However, There was no difference in cause of death according to serum CRP level. Death from cardiac cause is significantly higher among patients with positive thallium SPECT than negative results. The most common cause of death are, in descending order of frequency, cardiac disease including acute MI, sepsis, cerebrovascular disease. Conclusion: The baseline level of inflammation as assessed by the plasma concentration of CRP independently predicts the risk of coronary heart disease and survival in CAPD patients.