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        • KCI등재

          졸-겔 방법으로 $SiO_2/Si$ 기판 위에 제작된 (Bi,La)$Ti_3O_12$ 강유전체 박막의 특성 연구

          장호정,황선환 한국마이크로전자및패키징학회 2003 마이크로전자 및 패키징학회지 Vol.10 No.2

          졸-겔(Sol-Gel)법으로 $SiO_2/Si$ 기판 위에 $Bi_{3.3}La_{0.7}O_{12}$(BLT) 강유전체 박막을 스핀코팅하여 Metal-Ferroelectric-Insulator-Silicon 구조의 캐패시터 소자를 제작하였다. 열처리하지 않은 BLT 박막시료를 $650^{\circ}C$와 $700^{\circ}C$의 온도에서 열처리함으로서 임의 배향을 가지는 퍼롭스카이트 결정구조를 나타내었다. 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 (117) 주피크의 full width at half maximum(FWHM)값이 약 $0.65^{\circ}$에서 $0.53^{\circ}$로 감소하여 결정성이 개선되었으며 결정립 크기와 $R_rms$ 값이 증가하면서 박막표면이 거칠어지는 경향을 보여주었다. $700^{\circ}C$에서 열처리한 BLT 박막시료에 대해 인가 전압에 따른 정전용량(C-V)값을 측정한 결과 5V의 인가전압에서 메모리 원도우 값이 약 0.7V를 보여주었으며, 3V의 인가전압에서 누설전류 값이 약 $3.1{\times}10^{-8}A/cm^2$을 나타내었다. The $Bi_{3.3}La_{0.7}O_{12}$(BLT) capacitors with Metal-Ferroelectric-Insulator-Silicon structure were prepared on $SiO_2/Si$ substrates by using sol-gel method. The BLT thin films annealed at $650^{\circ}C$ and $700^{\circ}C$ showed randomly oriented perovskite crystalline structures. The full with at half maximum (FWHM) of the (117) main peak was decreased from $0.65^{\circ}$ to $0.53^{\circ}$ with increasing the annealing temperature from $650^{\circ}C$ to $700^{\circ}C$, indicating the improvement in the crystalline quality of the film. In addition, the grain size and $R_rms$ , values were increased with increasing the annealing temperatures, showing the rough film surface at higher annealing temperatures. From the capacitance-voltage (C-V) measurements, the memory window voltage of the BLT film annealed at $700^{\circ}C$ was found to be about 0.7 V at an applied voltage of 5 V. The leakage current density of the BLT film annealed at $700^{\circ}C$ was about $3.1{\times}10^{-8}A/cm^2$.

        • 비휘발성 메모리용 SrBi$_{2}$Ta$_{2}$ $O_{9}$강유전체 박막의 제조 및 특성연구

          장호정,서광종,장기근 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.3

          SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

        • KCI등재

          Preparation of Field Effect Transistor with (Bi,La)Ti3O12 Gate Film on Y2O3/Si Substrate

          장호정,서광종,서강모,박지호,김용태,장영철 한국마이크로전자및패키징학회 2005 마이크로전자 및 패키징학회지 Vol.12 No.1

          The field effect transistors (FETs) were fabricated on Y2O3/P-Si(100) substrates by the conventional memory processes and sol-gel process using (Bi,La)Ti3O12(BLT) ferroelectric gate materials. The remnant polarization (2Pr = Pr+-Pr-) for Pt/BLT/Pt/Si capacitors increased from 22 ?C/cm2 to 30 ?C/cm2 at 5V as the annealing temperature increased from 700oC to 750oC. There was no drastic degradation in the polarization values after applying the retention read pulse for 105.5 seconds. The capacitance-voltage data of Pt/BLT/Y2O3/Si capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from 700oC to 750oC. The leakage current of the Pt/BLT/Y2O3/Si capacitors annealed at 750oC was about 510-8 A/cm2 at 5V. From the drain currents versus gate voltages (VG) for Pt/BLT/Y2O3/Si(100) FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing the VG from 3V to 5V.

        • Sol-Gel법에 의한 SrBi_2Ta_2O_9 강유전체 박막의 특성

          장호정,임장규,유수호 단국대학교 신소재기술연구소 2000 신소재 Vol.9 No.-

          Pt/Ti/SiO_2/Si 기판구조위에 sol-gel법에 의해 as-coated SrBi_2Ta_2O9(SBT) 박막을 형성하였고, 650℃ 후속 열처리 온도에서 결정화한 후 결정학적 특성과 전기적 특성을 연구하였다. 650℃에서 후속 열처리된 SBT 박막시료의 경우 전형적인 perovskite결정구조를 보여주었다. SEM 표면과 단면형상을 관찰하여, 650℃ 후속 열처리한 박막의 두께는 약 7000Å를 나타냈으며 Pt전극과 SBT박막 사이에는 비교적 평활한 계면형상을 보여주었다. 1kHz주파수 인가시, 650℃에서 후속 열처리된 SBT 박막시료의 유전상수는 250의 값을 나타내었으며 잔류분극(2Pr=pr^+ + Pr^-) 값은 약 3.5uC/cm^2를 나타내었다. The as-coated SrBi_2Ta_2O_9(SBT) thin films were prepared on Pt/Ti/SiO_2/Si substrates by the solgel method. The post-annealing was carried out at 650℃ for the crystallization. The crystal structures and electrical characterizations were investigated. The SBT thin films post-annealed at 650℃ appeared the typical perovskite crystal structures. The SEM sectional and surfacial micrographies were observed. The thickness of SBT thin films post-annealed at 650℃ was about 7000Å. Sectional surface between Pt electrode and SBT film showed relative smoothness. The SBT thin films post-annealed at 650℃ indicated about 250 for the dielectric constant and 305 uC/cm^2 for the remanent polarization (2Pr=Pr^+ + Pr^-) at the frequency of 1kHz. The leakage currents were about 0.5~1.2uA/cm^2.

        • KCI등재후보

          잉크젯 프린터용 발열체의 제작과 특성연구

          장호정,노영규 한국마이크로전자및패키징학회 2003 마이크로전자 및 패키징학회지 Vol.10 No.3

          The crystallized stable cobalt silicide$(CoSi_2)$ films were prepared on $poly-Si/SiO_2/Si$substrates for the application of inkjet printing head as a heating element with omega shape. The structural images and temperature resistance coefficient were investigated. The value of temperature resistance coefficient of the heating element was found to be about $0.0014/^{\circ}C$. The maximum power of the heating element was 2 W at the applied voltage of 2 V, 10 kHz in frequency and $1{\mu}s$ in pulse width. From the investigation of fatigue property according to the repeated applied voltages, there was no drastic changes in the resistances of heating element under the condition of $10^8$ pulsed cycles at below 15 V biased voltage. In contrast, the resistance of heating element was greatly increased at $10^6$ pulsed cycles when the heating element was operated at 17 V. 잉크젯 헤드의 발열체에 적용하기 위해 $poly-Si/SiO_2/Si$ 다층기판 위에 결정화된 안정한 코발트실리사이드$(CoSi_2)$ 박막을 형성하여 오메가 형태의 발열체를 제작하고 발열체의 구조적 형상과 온도저항계수 등 전기적 특성을 조사, 연구하였다 $(CoSi_2)$ 박막의 형성은 금속 Co 박막을 급속 열처리장치를 이용하여 $800^{\circ}C$에서 20초 동안 질소 분위기에서 열처리하여 실리사이드 박막을 형성하였다. 발열체의 온도 저항계수 값은 약 $0.0014/^{\circ}C$ 값을 얻을 수 있었다. 인가전압 10 V, 주파수 10KHz 및 펄스간격 $1{\mu}s$ 인가시 발열체의 순간전력은 최대 2W를 나타내었다. 반복된 전압인가에 따른 발열체의 피로특성을 조사한 결과 15 V 이하의 전압인가시 $10^8$ 펄스 cycle 까지 저항변화가 거의 없었으나 17 V 인가전압에서는 $10^6$ cycle에서 발열체의 저항이 급격히 증가하였다.

        • KCI등재

          프린팅 히터용 코발트실리사이드 박막의 형성과 특성연구

          장호정,노영규 한국마이크로전자및패키징학회 2002 마이크로전자 및 패키징학회지 Vol.9 No.2

          Poly-Si/$SiO_2$/Si 하부기판구조 위에 Co 금속을 E-beam evaporation 방식으로 증착하고 급속 열처리 방식을 통해 프린터 heater용 코발트실리사이드 박막을 형성하였다. 급속열처리 온도 (600~$900^{\circ}C$)와 시간 (20~40초)을 변수로 하여 코발트실리사이드의 결정상 및 성분분포를 조사하였다. 또한 제작된 박막의 면저항과 결정특성 분석을 통해 고온에서의 열적 안정성을 확인하였다. $800^{\circ}C$ 온도에서 20초간 급속열처리한 경우 면저항이 약 $0.8 \Omega /\Box$ 인 안정한 $CoSi_2$ 결정상의 코발트실리사이드 박막이 얻어졌다. 그러나 $700^{\circ}C$ 이하의 온도에서는 결정상의 변화에 따라 코발트실리사이드 박막의 면저항이 급격히 증가하였다. 코발트실리사이드 박막의 온도저항계수는 약 $0.0014/^{\circ}C$ 값을 나타내었으며, 프린터 발열체로 응용가능함을 확인 할 수 있었다. Cobalt silcides thin films were prepared on Poly-Si/$SiO_2$/Si substrates by Co metal depostion using E-beam evaporation method and rapid thermal annealing for the application of inkjet printing heater. The crystal phases and composition distributions of the films were investigated as functions of the rapid thermal annealing (RTA) temperatures (600~$900^{\circ}C$) and times (20~40 sec). The high temparature thermal stability was also investigated by the analysis of sheet resistance and crystalline properties. The stable $CoSi_2$ phases were obtained by the RTA annealing at $800^{\circ}C$ for 20 seconds showing $0.8 \Omega /\Box$ of sheet resitance. However, the sheet resistances were sharply increased at below $700^{\circ}C$ due to changes of crystalline phases. The temperature resistance coefficient of heating elements was found to be about $0.0014/^{\circ}C$, and the obtained cobalt silicided films can be applied to the printer heating elements.

        • KCI등재

          낙법(烙法)에 관한 중의(中醫) 논문 고찰

          장호정,이현주,서형식,Jang, Ho-Jeong,Lee, Hyeon-Joo,Seo, Hyung-Sik 대한한방안이비인후피부과학회 2018 한방안이비인후피부과학회지 Vol.31 No.3

          Objectives : The purpose of this study is to review the chinese published papers on cauterization of traditional chinese medicine. Methods : We searched chinese published papers from 1958 until May 2017 via CNKI(China National Knowledge Infrastructure) with the keyword "cauterization". We analyzed the studies covered cauterization medical treatment, and classified them by 5 categories including periods, type of study, treatment site, experiment target site, and cauterizing method. Results : We reviewed 112 chinese papers which include 10 Original articles, 43 Review articles, and 59 Case reports. Examining yearly distributions, we can see that research on cauterization is becoming more active than in the past. In classification of 93 clinical studies by treatment site, the number of research on Tonsillitis accounts for almost half(43 studies), followed by Sore throat(14 studies). Among 10 experimental studies, Eye is the most frequently targeted organ which was used to study high intra-ocular pressure(5 studies), and retinal ganglion cell(2 studies). Lastly, there are various methods of cauterization used in papers: Branding iron(54 studies), and Red-hot needle(24 studies) are two major heating methods. Conclusions : This analysis shows that studies on the application of cauterization have been actively conducted in China these days. Furthermore, up-to-date cauterizing methods have been developed such as electric type and microwave type beyond traditional ways. We expect this article will encourage further research on cauterization in order to apply it to a variety of diseases. Then, it could become one of new effective medical treatments in Korean medicine.

        • SCOPUSKCI등재

          RF 스퍼터링에 의해 MgO/Si 기판위에 증착된 Pb(Zr, Ti)$\textrm{O}_3$ 강유전체 박막의 특성연구

          장호정,서광종,장지근,Jang, Ho-Jeong,Seo, Gwang-Jong,Jang, Ji-Geun 한국재료학회 1998 한국재료학회지 Vol.8 No.12

          PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$. 하부전극 없이 MgO 중간층을 갖는 고농도로 도핑된 Si(100) 기판(MgO/Si)위에 고주파 마그네트론 스퍼터링 방법으로 as-deposited PZT 박막을 증착한후 $650^{\circ}C$ 온도에서 RTA 후속열처리를 실시하였다. 제작된 PZT 박막시료에 대해 MgO 중간층의 두께 및 후속열처리에 따른 결정학적, 전기적특성을 조사하였다. XRD 분석결과 MgO층이 전혀 증착되지 않은 bare Si 기판위에 증착된 PZT 시료는 pyrochlore 결정상만이 나타났으나 50 두께의 M gO층 위에 증착된 PZT/MgO/Si 박막시료는 전형적인 perovskite 결정구조를 나타내었다. SEM 및 AES 분석결과 PZT 박막두게는 약 7000 이었으며 비교적 매끄러운 계면형상을 보여 주었다. PZT 박막내의 각 성분원소가 깊이에 따라 비교적 균일한 분포를 나타내었다. $650^{\circ}C$의 온도로 후속열처리된 PZT/MgO/Si 박막의 1KHz 주파수에서 유전상수 ($\varepsilon_{r}$ )와 잔류분극 (2Pr)은 약 300 및 $14\mu$C/$\textrm{cm}^2$의 값을 각각 나타내었으며 누설전류의 크기는 약 $3.2\mu$A/$\textrm{cm}^2$이었다.

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