http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
임재영,김득녕,강태원,홍치유,김성일 동국대학교 자연과학연구소 1987 자연과학연구 논문집 Vol.7 No.-
반절연성 GaAs의 광전도 특성을 조사하였다. 그 결과 파장변화에 따른 광여기 peak는 intrinsic 광여기 peak가 1.42eV에서, extrinsic 광여기peak가 1.35eV에서 나타났으며, 이 시료의 재결합 중십에서의 이온화에너지는 0.656eV이었다. We investigated the photoconductivity of semi-insulating GaAs. For the experimental results, the spectral response curve of photoconductivity of semi-insulating GaAs showed an intrinsic photoexcitation peak(1.42eV), at 300K. The electron ionization energy of dominant recombination center was 0.656eV
C²-DLTS system제작 및 Sn-doped GaAs의 Deep Level
임재영,강태원,홍치유,김문덕 동국대학교 자연과학연구소 1987 자연과학연구 논문집 Vol.7 No.-
Personal computer를 사용하여 C²-DLTS장치를 자체제작하였다. 이 장치에서 data acqusition을 위한 interface는 12bit A/D converter를 사용하였으며, 시료의 bias전압 조정은 pulse qenerator 대신 D/A converter를 이용하였다. 한편 data processing, rate window, pulse height pulse width는 computer로 조절하였다. 이 장치를 이용하여 MBE로 성장한 Sn doped GaAs의 deep level을 조사하여 본 결과 활성화에너지가 0.75eV이며 포획단만적이 σ=1.4910cm²인 electrom trap이 나타났다. A simple high-performance personal computer-based apparatus for C²-DLTS measurements was wet up. In this wywtem, the intervace for the data acquisition was built by use of 12-bit A/D converter and the control of bias pulse to the sample was done through D/A converter instead of pulse generator. Pulse width, pulse height, and rate window as well as data processing arecontrolled by personal computer. As a results of C²-DLTS measurement for Sn-GaAs grown by MBE, we have obtained th activation energy of the electron trap was 0.75eV and the capture cross section was 1.49×10cm² respcetively.
임영진,김국기,김태성,김광명,이봉암,임언 대한신경외과학회 1985 Journal of Korean neurosurgical society Vol.14 No.1
The authors present two cases of interesting intraventricular meningiomas. One of these is located in the left lateral ventricle of 26 years old female with no neurologic deficit, which has moderate vascularity. The other case is located in the right "lateral ventricle of 5 years old female with very large size" The preoperative diagnosis should be reached by means of both computerized tomography and carotid angiography. The selection of surgical approach is very important, especially in left lateral ventricular tumor, which is determined by neurologic deficit, vascularity of tumor and tumor size. Total removal has been accomplished by superior parietal approach in left lateral ventricular tumor and right temporal approach in child ventricular meningioma. Literatures concerned were reviewed.
강태원,홍치유,임재영 동국대학교 자연과학연구소 1987 자연과학연구 논문집 Vol.7 No.-
CVD방법에 의하여 공구강 위에 TiC를 증착하였다. 그 결과 성장율은 성장시간, C와 Ti의 몰비?에 따라 선형적으로 증가하였고 TiCl₄와 CH₄의 총유량이 140cc/min이하일때는 성장율이 우량에 선형적으로 증가하였다. 한편 X-ray측정 결과 mc/T1≤1.25에서 증착한 시료는 (200) 결정면의 성장이 강하게 나타났으며, mc/T1≥1.25에서 증착한 시료는 (111)면의 성장이 우세하게 나타남을 알았다. We deposited TiC on tool steel by CVD method. The growth rate was increased linearly as an increasing time, mc/T1 and total flow rate of TiCl₄ and CH₄ below 140cc/min.. X-ray spectra reveal that the specimen deposited with mc/T1≤1.25 has (200) preferred orientation, (111) perferred orientation above mc/T1=1.25.
Intrinsic rotation reversal, non-local transport, and turbulence transition in KSTAR L-mode plasmas
Shi, Y.J.,Kwon, J.M.,Diamond, P.H.,Ko, W.H.,Choi, M.J.,Ko, S.H.,Hahn, S.H.,Na, D.H.,Leem, J.E.,Lee, J.A.,Yang, S.M.,Lee, K.D.,Joung, M.,Jeong, J.H.,Yoo, J.W.,Lee, W.C.,Lee, J.H.,Bae, Y.S.,Lee, S.G.,Yo International Atomic Energy Agency 2017 Nuclear fusion Vol.57 No.6
<P>Experiments of electron cyclotron resonance heating (ECH) power scan in KSTAR tokamak clearly demonstrate that both the cutoff density for non-local heat transport (NLT) and the threshold density for intrinsic rotation reversal can be determined by the collisionality. We demonstrate that NLT can be affected by ECH, and the intrinsic rotation direction follows the changes of NLT. The cutoff density of NLT and threshold density for rotation reversal can be significantly increased by ECH. The poloidal flow of turbulence in core plasma is in the electron and the ion diamagnetic direction in ECH plasmas and high density OH plasma, respectively. The auto-power spectra of density fluctuation are almost the same in the outer region for both ECH and OH plasmas. On the other hand, the divergence in density fluctuation spectra at high frequency range between OH and ECH plasma is clearly observed in core region. The features of linear confinement and saturated confinement also appeared in ECH plasma, which is similar to the linear ohmic confinement (LOC) mode and saturate ohmic confinement (SOC) mode. All these observations in macroscopic parameters and micro fluctuations suggest a possible link between the macro phenomena and the structural changes in turbulence mode.</P>
Effects of Buffer Layer Annealing on ZnO Thin Films Grown by using Atomic Layer Deposition
J. Y. Leem,C. R. Kim,J. H. Heo,C. M. Shin,J. H. Park,T. M. Lee,류혁현,J. H. Chang,C. S. Son,B. C. Shin,W. J. Lee,S. T. Tan,J. L. Zhao,X. W. Sun 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.6
In this study, the effects of buffer layer annealing duration on ZnO thin films deposited by using the remote plasma atomic layer deposition (ALD) method are discussed. ZnO thin films were grown on ZnO-buffer/Si (100) and were annealed for various durations between 0.5 and 60 min. The structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy, X-ray diffraction, and photoluminescence measurements. The ZnO thin films grown on a rough ZnO buffer layer were found to have high optical quality. The results from this study possibly contribute to advances in ZnO-base LED technologies.