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일방향 응고법을 이용한 Mar M-247LC 초내열합금의 액상 물성 측정
김현철,이재현,서성문,김두현,조창용,Kim, Hyeon-Cheol,Lee, Jae-Hyeon,Seo, Seong-Mun,Kim, Du-Hyeon,Jo, Chang-Yong 한국재료학회 2001 한국재료학회지 Vol.11 No.9
Directional solidification experiments have been carried out at the solidification rates from 0.5 to 50$\mu\textrm{m}$/s in Mar M-247LC superalloy in which several important liquid properties were estimated by analyzing the interface stability and temperature gradient at the solid/liquid interface. The diffusion coefficient in the liquid was estimated by employing the constitutional supercooling criterion. The temperature gradients changed with solidification rates and latent heat of solidification. The thermal conductivities of solid and liquid could be estimated by heat flux balance at the solid liquid interface.
과학기술 동호인소개-전국학교컴퓨터 교육연구회(NASEC)
김현철,Kim, Hyeon-Cheol 한국과학기술단체총연합회 1995 과학과 기술 Vol.28 No.11
컴퓨터 교육의 이론과 실제에 관한연구를 통해 학교사회의 정보화 촉진에 기여할 목적으로 91년창립된 전국학교컴퓨터 교육연구회는 3천여명의 회원이 전국12개 시 도지회를 중심으로 8회의 컴퓨터교육과 6회의 학술세미나를 개최하는 등 왕성한 활동을 펴오고 있다.
Display Driver IC용 Amplifier Input Transistor의 Matching 개선
김현철,노용한,Kim, Hyeon-Cheol,Roh, Yong-Han 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.3
The voltages for pixel electrodes on LCD panels are supplied with analog voltages from LCD Driver ICs (LDIs). The latest LDI developed for large LCD TV's has suffered from the degradation of analog output characteristics (target voltage: AVO and output voltage deviation: dVO). By the failure analysis, humps in $I_D-V_G$ curves have been observed in high voltage (HV) NMOS devices for input transistors in amplifiers. The hump is investigated to be the main cause of the deviation for the driving current in HV NMOS transistors. It also makes the matching between two input transistors worse and consequently aggravates the analog output characteristics. By simply modifying the active layout of HV NMOS transistors, this hump was removed and the analog characteristics (AVO &dVO) were improved significantly. In the help of the improved analog characteristics, it also became possible to reduce the size of the input transistors less than a half of conventional transistors and significantly improve the integration density of LDIs.
온도별 구리금파리(Lucilia sericata)의 발육
김현철,김수정,윤지은,조태호,최병렬,박정규,Kim, Hyeon-Cheol,Kim, Soo-Jung,Yun, Ji-Eun,Jo, Tae-Ho,Choi, Byeong-Reol,Park, Chung-Gyoo 한국응용곤충학회 2007 한국응용곤충학회지 Vol.46 No.1
Maggot therapy는 1900년대 초부터 압박성 욕창, 당뇨나 괴사에 의한 궤양, 수술 후 감염된 상처, 화상 등의 상처치료에 다시 사용되기 시작하였다. 환부에 처리할 적절한 발육단계의 무균유충을 생산하고, 증식 보존용 계통을 유지하는 데 필요한 자료를 얻기 위하여 온도별(15.4, 20.6, 22.5, 26.2, 29.1, $33.0^{\circ}C$) 발육실험을 수행하였다. 간배지(liver agar medium)에서 알기간과 1령 및 2령 기간은 $33.0^{\circ}C$에서 각각 9.0시간, 14.0시간, 18.6시간으로 가장 짧았다. 3령 기간과 번데기 기간은 $29.1^{\circ}C$에서 각각 285.0시간과 171.0시간으로 가장 짧았다. 온도별 발육기간을 기초로 각 발육단계의 발육영점온도와 유효적산온도를 산출하였다. 암수 성충은 대개 1개월 이상 생존하였고, 암컷은 일평생 2.7회 산란하였으며, 총 338.5개의 알을 낳았다. Maggot therapy (MT) has been re-introduced for non-healing wounds such as pressure sore, diabetic and necrotic ulcers, as well as infected surgical wounds, burn, and trauma injuries since early 1990s. For the production of sterile maggot of proper developmental stage, Lucilia sericata were studied on developmental periods of immature stages on liver agar medium under six different temperatures such as 15.4, 20.6, 22.5, 26.2, 29.1, and $33.0^{\circ}C$, and adult longevity and egg Production under $29^{\circ}C$. The periods of eggs and larvae of the 1st and the 2nd instars were shortest at $33^{\circ}C$ by 9.0, 14.0 and 18.6 hours, respectively. The periods of the 3rd instar larvae and pupae were shortest at $29.1^{\circ}C$ by 285.0 and 171.0 hours, respectively. Developmental zero point and total effective temperature far the development of each stage were calculated based on the developmental periods. Adults of both female and male lived more than one month. Females laid an average of 338.5 eggs through 2.7 times of egg laying throughout her lifetime.
Anodic Bonding 에 의한 소자 열화에 관한 연구
김현철,전국진 ( Hyeon Cheol Kim,Kuk Jin Chun ) 한국센서학회 1993 센서학회지 Vol.2 No.2
Anodic Bonding technique is usually used for the fabrication of capacitive pressure sensor. This technique is that a Pyrex glass and a silicon wafer are heated and are applied by very high voltage, so surrounding electronic circuits are to be damaged. In this paper, we calculated the electric field intensity using the RC model for the anodic bonding and experimentally investigated the effects for MOS devices and operational amplifiers. The NMOS`s and PMOS`s within the 340㎛ and 380㎛ distance are so affected that their threshold voltages are changed for the case of anodic bonding at 300 ℃ and 800V. Also, the offset voltage was changed by 40mV, but DC gain and output swing were not changed for operational amplifier.