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Changhun Yun,Hyunsu Cho,Tae-Wook Koh,Ji-Hoon Kim,Jeong Won Kim,Yongsup Park,Seunghyup Yoo Institute of Electrical and Electronics Engineers 2012 IEEE transactions on electron devices Vol.59 No.1
<P>Inverted top-emitting organic light-emitting diodes (ITOLEDs) with high power efficiency and near-ideal emission characteristics are demonstrated by using the combination of the following: 1) an electron-injection layer composed of Cs<SUB>2</SUB>CO<SUB>3</SUB>, which lowers the turn-on voltage; 2) an electron-transporting layer with optimal electron mobility, which enhances the electron current and thus improves the carrier balance; and 3) a dielectric/metal/dielectric multilayer electrode that works as a damage-free top transparent anode optimized to achieve high efficiency and ideal emission characteristics. By this approach, ITOLEDs with power efficiency values of 3.8 and 30 lm W<SUP>-1</SUP> are demonstrated in fluorescent and phosphorescent types, respectively, at a luminance value of 1000 cd m<SUP>-2</SUP> with little distortion in spectral/angular characteristics.</P>
The Study of the Laser-driven Nanostructural Reorganization of Polymer Semiconducting Materials
Changhun Yun(윤창훈) 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.1
In organic electronic devices, solution-processed polymer semiconducting materials have been widely studied for a low-cost alternative to the conventional vacuum processed devices. Because the device performance from the polymer semiconductors can be governed by the nano-structure of the polymeric layer, lots of researchers have investigated the influence of solvent treatments during preparing the polymer thin layer. In this respect, we present the novel method to change the nano-structure of polymer semiconducting layer using laser-based heating. In this way, we have found that the laser irradiation can promote nanoscale reorganization of PEDOT:PSS layer and can enhance its electrical conductivity up to three orders of magnitude. For the polymer semiconducting layers in OLEDs, the laser-induced heat alters the solid or crystal structure so that the irradiated areas can be selectively deactivated in its electrical conductivity.
High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology
Changhun Yun,Minseok Kim,Seung Won Lee,Hanul Moon,Sunmin Park,Jae Bon Koo,Jeong Won Kim,In-Kyu You,Seunghyup Yoo IEEE 2011 IEEE electron device letters Vol.32 No.10
<P>A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 μm are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.</P>
High-Performance Pentacene Thin-Film Transistors Fabricated by Organic Vapor-Jet Printing
Changhun Yun,Hanul Moon,Hyun Wook Kang,Mincheol Kim,Hyung Jin Sung,Seunghyup Yoo IEEE 2010 IEEE electron device letters Vol.31 No.11
<P>Organic vapor-jet printing, a maskless direct printing method, is used to fabricate high-performance pentacene thin-film transistors. By combining the optimal carrier gas temperature and the surface treatment of gate dielectrics, a mobility of 0.46 (±0.03) cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP> and an on-off ratio greater than 10<SUP>7</SUP> are achieved. Morphological analyses indicate that the relatively high carrier gas temperature and low surface energy of the dielectric surface are the keys in achieving the level of performance comparable to that of devices based on conventional technologies.</P>
Yun, Changhun,Choi, Jungmin,Kang, Hyun Wook,Kim, Mincheol,Moon, Hanul,Sung, Hyung Jin,Yoo, Seunghyup WILEY‐VCH Verlag 2012 ADVANCED MATERIALS Vol.24 No.21
<P><B>Digital‐mode organic vapor‐jet printing (D‐OVJP)</B> is demonstrated by producing a series of organic vapor jets. D‐OVJP not only inherits all the benefits of a conventional OVJP but also provides an advanced, straightforward control over organic deposition with a pixel‐to‐pixel precision. Digitally‐controlled film thickness and high‐performance thin‐film transistors are demonstrated with D‐OVJP, proving its potential applicability to organic electronics and related areas.</P>
윤미옥,강신정,이수정,최현철,김호정,박창훈,홍세령,김지선,김길수 식품의약품안전청 2001 식품의약품안전청 연보 Vol.5 No.-
의약품의 약효를 안전하게 나타내기 위해서는 정확한 용량의 복용이 중오하다. 정해진 용법 ·용량에 따라 투여를 하더라도 1회 복용단위당 항량이 균일하지 않으면 복용자의 의지에' 관계없이 과량 혹은 유효량에 디치지 못하는 양을 복용하게 되므로 복용단위당 유효성분의 균질성은 매우 중요하다. 이에 국내 시판 의약품 중 경구용 성형제제를 대상으로 중랸과 항랑의 균질성 평가 및 상관성에 대한 기초적 연굴를 통하여 함량군일성시험의 규긱 설정에 관한 기준을 마련하고자 하였다. 국내 시판 중인 총 560롯트의 경구용 성형제제에 대하여 주성분의 수 함량 등에 따라 븐류하고 함량시험, 중량편차, 함량균일성시험을 실새하여 중량편차와 함량균일성의 상관계수를 구하였으며, 상관성분석을 통하여 각 분류한 군에서 상관성 있는 것으로 나타난 롯트의 비을을 살펴보았다. 주성분 함유량 2% 미만, 혹은 2 mg 미만인 제제에서는 함량균일성으로의 관리가 필요한 것으로 나타났으며, 제형에 따라서는 당의정에서 상패적으로 상관성 있는 롯트의 수가 적게 나타나 함량균일성으로의 관리가 필요한 것으로 나타났다