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Yook, Kyoung Soo,Jeon, Soon Ok,Min, Sung‐,Yong,Lee, Jun Yeob,Yang, Ha‐,Jin,Noh, Taeyong,Kang, Sung‐,Kee,Lee, Tae‐,Woo WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.11
<P><B>Abstract</B></P><P>Cesium azide (CsN<SUB>3</SUB>) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN<SUB>3</SUB> is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN<SUB>3</SUB>‐doped n‐type layer and a MoO<SUB>3</SUB>‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W<SUP>−1</SUP>). Additionally, an n‐doping mechanism study reveals that CsN<SUB>3</SUB> was decomposed into Cs and N<SUB>2</SUB> during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A<SUP>−1</SUP>) is also created using an n–p junction that is composed of the CsN<SUB>3</SUB>‐doped n‐type organic layer/MoO<SUB>3</SUB> p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.</P>
Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors
Chen, Liang‐,Hsiang,Hu, Tarng‐,Shiang,Huang, Peng‐,Yi,Kim, Choongik,Yang, Ching‐,Hao,Wang, Juin‐,Jie,Yan, Jing‐,Yi,Ho, Jia‐,Chong,Lee, Cheng‐,Chung,Chen WILEY‐VCH Verlag 2013 Chemphyschem Vol.14 No.12
<P><B>Abstract</B></P><P>A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and <I>p</I>‐channel OTFT transport with hole mobilities as high as ∼0.12 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.</P>
Wu, Bo,Lee, Jin Gyun,Lim, Chang Ju,Jia, Shao Dong,Kwon, Sung Won,Hwang, Gwi Seo,Park, Jeong Hill WILEY‐VCH Verlag 2012 Helvetica chimica acta Vol.95 No.4
<P><B>Abstract</B></P><P>The four new sesquiterpenoids <B>1</B>–<B>4</B>, and the new 2‐(2‐phenylethyl)‐4<I>H</I>‐chromen‐4‐one (=2‐(2‐phenylethyl)‐4<I>H</I>‐1‐benzopyran‐4‐one) derivative <B>5</B>, together with the two known sesquiterpenoids <B>6</B> and <B>7</B>, the five known chromenones <B>8</B>–<B>12</B>, and 1‐hydroxy‐1,5‐diphenylpentan‐3‐one (<B>13</B>), were isolated from a 70% MeOH extract of <I>Aquilaria malaccensis</I> agarwood chips. Their structures were elucidated on the basis of comprehensive spectral analyses and comparison with literature data.</P>
Yu, Seung‐,Ho,Conte, Donato E.,Baek, Seunghwan,Lee, Dong‐,Chan,Park, Seung‐,Keun,Lee, Kyung Jae,Piao, Yuanzhe,Sung, Yung‐,Eun,Pinna, Nicola WILEY‐VCH Verlag 2013 Advanced functional materials Vol.23 No.35
<P><B>Abstract</B></P><P>Non‐aqueous sol‐gel routes involving the reaction of metal oxide precursors in organic solvents (e.g., benzyl alcohol) at moderate temperature and pressure, offer advantages such as high purity, high reproducibility and the ability to control the crystal growth without the need of using additional ligands. In this paper, a study carried out on a series of iron oxide/reduced graphene oxide composites is presented to elucidate a structure‐properties relationship leading to an improved electrochemical performance of such composites. Moreover, it is demonstrated that the easy production of the composites in a variety of temperature and composition ranges, allows a fine control over the final particles size, density and distribution. The materials obtained are remarkable in terms of the particle's size homogeneity and dispersion onto the reduced graphene oxide surface. Moreover, the synthesis method used to obtain the graphene oxide clearly affects the performances of the final composites through the control of the restacking of the reduced graphene oxide sheets. It is shown that a homogeneous and less defective reduced graphene oxide enables good electrochemical performances even at high current densities (over 500 mAh/g delivered at current densities as high as 1600 mA/g). The electrochemical properties of improved samples reach the best compromise between specific capacity, rate capability and cycle stability reported so far.</P>
Tensile test of lead zirconate titanate (PZT)/Platinum (Pt) thin film
Park, J.‐,H.,Bae, H.‐,Y.,Oh, Y.‐,R.,Kim, Y.‐,J.,Kim, H.Y.,Huh, Y.‐,H. WILEY‐VCH Verlag 2011 Materialwissenschaft und Werkstofftechnik Vol.42 No.5
<P><B>Abstract</B></P><P>This paper presents the results of tensile tests for lead zirconate titanate (PZT)/Platinum (Pt) thin films of 2.15 μm thickness in atmospheric air at room temperature. An axial loading tester developed by the authors was used for the tests. The tester was equipped with a load cell with a maximum capacity of 0.5 N and a non‐contact position measuring system based on the principle of capacitance micrometry. Furthermore, the tester was equipped with a CCD (charge‐coupled device) system for measuring the displacement of the gage length. Specimens with three different widths (50, 100 and 150 μm) were fabricated to study the size (width of specimen) effects. The elastic moduli of the specimens with 50, 100 and 150 μm width were 72.8 ± 3.7, 75.0 ± 1.3, 73.3 ± 1.8 GPa, respectively. In addition, the ultimate tensile strength of the specimens with 50, 100 and 150 μm width were 263.4 ± 21.1, 238.6 ± 4.5, 221.1 ± 13.9 MPa, respectively. It was observed that the width of specimen has little effect on the elastic modulus of PZT/Pt thin films but has an effect on the ultimate tensile strength of PZT/Pt thin films and the ultimate tensile strength decreases as the width increases. It was assumed that the scatter in the ultimate tensile strength of 50 μm width was attributed to delamination of PZT/Pt layers before the fracture in the tensile test. The 0.2% offset yield strength could not be measured because the PZT/Pt thin film is very brittle.</P>
Kim, Yang‐,Rae,Seo, Hyo‐,Ju,Oh, Jeong‐,Wook,Lim, Hyunchang,Kim, Tae Hyun,Kim, Hasuck WILEY‐VCH Verlag 2013 Electroanalysis Vol.25 No.4
<P><B>Abstract</B></P><P>An electrogenerated chemiluminescence (ECL)‐based immunosensor for the detection of immunoglobulin G (IgG) has been fabricated using Ru(bpy)<SUB>3</SUB><SUP>2+</SUP>‐doped silica nanoparticles and calix[4]crown‐5 self‐assembled monolayers (SAMs). Ru(bpy)<SUB>3</SUB><SUP>2+</SUP>‐doped silica nanoparticles are prepared by the water‐in‐oil (W/O) microemulsion method. ProLinker B, a commercially available thiolated calix[4]crown‐5 derivative, is utilized for the immobilization of anti‐immunoglobulin G (Anti‐IgG) on a gold electrode. The concentration of IgG is measured using a sandwich‐type ECL immunosensor based on the proposed immunosensor. The ECL intensity is linearly proportional to the IgG concentration over the concentration range 5–30 µg mL<SUP>−1</SUP>. The detection limit of IgG is 1.5 µg mL<SUP>−1</SUP>.</P>
Ryou, Myung‐,Hyun,Kim, Jangbae,Lee, Inhwa,Kim, Sunjin,Jeong, You Kyeong,Hong, Seonki,Ryu, Ji Hyun,Kim, Taek‐,Soo,Park, Jung‐,Ki,Lee, Haeshin,Choi, Jang Wook WILEY‐VCH Verlag 2013 Advanced Materials Vol.25 No.11
<P><B>Conjugation of mussel‐inspired catechol groups to various polymer backbones</B> results in materials suitable as silicon anode binders. The unique wetness‐resistant adhesion provided by the catechol groups allows the silicon nanoparticle electrodes to maintain their structure throughout the repeated volume expansion and shrinkage during lithiation cycling, thus facilitating substantially improved specific capacities and cycle lives of lithium‐ion batteries.</P>
Yun, Jin‐,Mun,Yeo, Jun‐,Seok,Kim, Juhwan,Jeong, Hyung‐,Gu,Kim, Dong‐,Yu,Noh, Yong‐,Jin,Kim, Seok‐,Soon,Ku, Bon‐,Cheol,Na, Seok‐,In WILEY‐VCH Verlag 2011 Advanced Materials Vol.23 No.42
<P>Solution‐processable reduced graphene oxide as a hole‐transporting layer for highly efficient and stable organic solar cells is reported on page 4923 by Dong‐Yu Kim, Seok‐In Na, and co‐workers. Introduction of a newly reduced graphene oxide by simple solution processing into solar cells dramatically raises the cell efficiency and cell life‐time. The results will allow full use of chemically reduced graphene and will advance the realization of carbon‐based printable optoelectronic devices. </P>
Cable‐Type Flexible Lithium Ion Battery Based on Hollow Multi‐Helix Electrodes
Kwon, Yo Han,Woo, Sang‐,Wook,Jung, Hye‐,Ran,Yu, Hyung Kyun,Kim, Kitae,Oh, Byung Hun,Ahn, Soonho,Lee, Sang‐,Young,Song, Seung‐,Wan,Cho, Jaephil,Shin, Heon‐,Cheol,Kim, Je Y WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.38
<P><B>The mechanical flexibility of a cable‐type battery</B> reaches levels far beyond what is possible with conventional designs. The hollow‐spiral (helical) multi‐helix anode architecture is critical to the robustness under mechanical stress and facilitates electrolyte wetting of the battery components. This design enables the battery to reliably power an LED screen or an MP3 player even under severe mechanical twisting and bending.</P>
In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Choi, Sang‐,Jun,Park, Gyeong‐,Su,Kim, Ki‐,Hong,Cho, Soohaeng,Yang, Woo‐,Young,Li, Xiang‐,Shu,Moon, Jung‐,Hwan,Lee, Kyung‐,Jin,Kim, Kinam WILEY‐VCH Verlag 2011 ADVANCED MATERIALS Vol.23 No.29
<P><B>Solid electrolyte memories</B> utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer‐sized diameter and spacing. </P>