광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

VLSI require thinner dielectric film and also larger capacitance. Most of such VLS I have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TIN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TIN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

이란 쿠르드족의 민족주의 운동

장병옥 한국외국어대학교 중동연구소 1995 중동연구 Vol.14 No.-

광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 생산기술연구소 1997 生産技術硏究 Vol.19 No.1

VLSI require thinner dielectric film and also larger capacitance. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

가우스雜音과 다중파 干涉環境下에서 채널 符號 技法을 利用한 諸般 디지탈 變調信號의 誤率特性

孔炳玉,趙成俊 한국항공대학교 1990 論文集 Vol.28 No.-

본 논문에서는 가우스잡음환경하에서 다중파간섭의 영향을 받는 디지탈 변조신호의 오율특성을 개선하는 방법으로서 채널부호기법을 도입하여 해석하였다. 유도된 오율식으로 부터 평균 신호전력 대 잡음전력의 비(??), 평균 신호전력 대 다중간섭파 전력의 비(??)를 파라메터로 하여 수치계산한 다음 오율그래프로 나타내어 그 결과를 비교, 검토하였다. 비교대상의 디지탈 변조방식으로서 진폭편이변조(ASK), 위상편이변조(PSK), 주파수편이변조(FSK), 최소주파수편이변조(MSK), 직교진폭변조(QAM) 및 진폭위상변조(APK)를 택하였다. 검토한 결과, (8, 4) 해밍부호기법의 도입에 의해 CNR이 약 3[dB] 정도 개선되며 (4, 5) 상관부호 기법의 도입시에는 약 6[dB] 개선된다. 또한 다치화되거나 간섭파의 레벨이 높을 때(낮은 CIR) 개선도는 증가하며 에러가 많은 경우(??)에는 채널 부호기법을 도입하더라도 오율특성은 개선되지 않는다. The error rate performances of digitally modulated signlas transmitted through the Gaussian noise and multiple interference channel have been analyzed with channel coding techniques such as hamming code and convolution code. Using the derived equations of error probabilities in the environments of Gaussian noise and multiple interferer, the error rate performances of various digitally modulated signlas have been evaluated, and compared in graphs as a function of average carrier-to-multiple interferer power ratio(??) and the average carrier-to-Gaussian noise power ratio(??). In this paper, the modulation schemes such as amplitude shift keying(ASK), phase shift keying(PSK), frequency shift keying(FSK), minimum shift keying(MSK), quadrature amplitude modulation(QAM) and amplitude phase shift keying(APK) have been selected for the study of performance improvement and comparison. The results of comparison show us that, the CNR performances have been improved about 3 [dB] by (8, 4) hamming code, and about 6[dB] by (4, 5) convolution code. And the error performance inprovement increases in multi-ary type or in low CIR.

SrTiO₃ 박막의 C-V특성에 미치는 Ti층의 영향

김병인,정천옥,이상일 조선대학교 에너지.자원신기술연구소 1997 에너지·자원신기술연구소 논문지 Vol.19 No.2

This study makes SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃/Al and Si/Ti/SrTiO₃/Al of MOS structure using Ti as buffer layer, measures and examines the electrical features with C-V as a result, ferroelectrics oscillation occurrs by the interaction within a crystal by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the peak of permittivity value of Ti/SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. The thicker thin film is, the lower capacitance value can be and saturation is delayed, so the experimental results satisfy the general capacitance.

황금(黃芩)의 4-VO로 유발한 흰쥐뇌허혈에 대한 신경방어효과

李秉哲,林康鉉,金榮玉,金善礪,安德均,朴虎君,金護哲 대한본초학회 1999 大韓本草學會誌 Vol.14 No.2

Scutellariae Radix(SR), the root of Scutellaria baicalensis G_EORGI, whose property, flavour and channel tropism is bitter in flavour, cold in property(寒), acting on the lung, gallbladder, stomach and large intestine channels(歸?,?,?,大??), has the effects of clearing away heat and dampness(淸熱??), purging fire, detoxicating(?火解?), stopping bleeding(止血) and preventing miscarriage(安?). This drug is one of the popular drugs in traditional Korean medicine, which has been used to antipyretic, antibacterial, antitoxic and antihypersensitive effects. So this study was planned to check the neuroprotective effect of SR on the global ischemia induced by 4-vessel occlusion in Wister rats. and SR extract was lyophilized after extraction with 70% methanol. We induced 4-vessel occlusion for 10 minutes and reperfused again. The number of CA1 pyramidal neurons were counted after 7 days of reperfusion under the cresyl violet staining. The result obtained that in 4-VO ischemia, SR showed significantly neuroprotective effects(1,000 and 500 ㎎/㎏ of SR extracts, p<0.05) compared with control group. Each neuroprotective ratio was about 27.4 %, 23.2 % respectively. Consequently, Scutellariae Radix has neuroprotective effects on the global ischemia induced by 4-vessel occlusion in Wistar rats.

SrTiO_3 박막의 유전특성에 미치는 Ti층의 영향

정천옥,김병인,김창석 조선대학교 동력자원연구소 1997 動力資源硏究所誌 Vol.19 No.1

This study makes SrTiO₃ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃ and Si/Ti/SrTiO₃ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption coefficient, electric permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption coefficient of thin film with Ti as buffer layer is increased. It is found that the peak of electric permittivity value of Ti/SrTiO₃ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of electric permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO₃ has lower values in reverse bias.

몇 가지 전이금속, Ni(II) 및 Zn(II) 3,6-bis(2'-pyridyl)pyridazine 착 화합물들의 세포 독성효과

권병목,이정옥,최상운,성낙도 충남대학교 형질전환복제돼지연구센터 2007 논문집 Vol. No.10

A series of cytotoxic activities (ED_(50)) in vitro against six human cancers (lung cancer, uterine cancer, skin cancer, brain cancer, colon cancer and adenocarcinoma) and their seventeen cell lines of 3,6-bis(2'-pyridyl)pyridazine, 1, 3,6-bis-(6'-methyl-2'-pyridyl)pyridazine, 2 and their transition metal, Ni(II), Cu(II) and Zn(II) complexes, 3~6 were measured. Particularly, the results revealed that the cytotoxic activities against the brain cancer cell line (SNB-19) and the colon cancer cell line (SW62) of bis-[3,6-bis-(6'-methyl-2'-pyridyl)pyridazine-k^(2)N^(2),N^(3)]chlorocopper(II)perchlorate, 4 were shown to be higher than that of the first generation anticancer agent, Cis-platin. 6종의 인체 암(폐암, 피부암, 결장암, 자궁암, 선암 및 뇌암)과 그의 17가지 세포주들에 대한 리간드 화합물 3,6-bis(2'­pyridyl)pyridazine(1)과 3,6-bis(6'-methyl-2'-pyridyl)pyridazine(2) 그리고 그들의 전이금속(Ni(II), Cu(II) 및 Zn(II)) 착 화합물들 (3~6)의 세포독성을 각각 측정하였다. 그 결과, 특히 Cu(II) 착화합물, bis-[3,6-bis-(6'-methyl-2'-pyridyl)pyridazine-k^(2)N^(2),N^(3)]chlorocopper(II)perchlorate (4)는 뇌암(SNB-19)과 결장암(SW-62) 세포주에 대하여 제1세대 항암제인 Cis-platin보다 높은 세포독성을 나타내었다.

이란-이라크 분쟁

장병옥 한국외국어대학교 중동연구소 2001 중동연구 Vol.20 No.-

교직의 여성화와 교육대학교 입학정원의 성별 할당제에 관한 연구

심미옥,라병소,백정자 춘천교육대학교 학생생활연구소 1997 學生生活硏究 Vol.21 No.-