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레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
이재윤,Anvar Tukhtaev,유수창,김용환,최성곤,유흥균,정용진,김성진 대한금속·재료학회 2022 대한금속·재료학회지 Vol.60 No.8
High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have made significant progress as amorphous silicon replacements for electronics and commercial displays. On the other hand, developing metal oxide transistors with low processing temperatures remains a difficulty. The hightemperature annealing process causes very instability in the plastic substrate. Here, we introduce IGZO TFTs that shows enhanced electrical properties environmental stability by laser post-annealing. After annealing process, the laser post-annealing process was given at 80 MHz, pulse width 140 fs, for 50 seconds. The improved electrical characteristics of this laser post-annealed IGZO TFTs were: 9.03 cm2/Vs; 2.2×107 on/off current ratio. The IGZO TFT to which laser post-annealing was applied had a flat surface, and it was confirmed that the combination of internal metal and oxygen was urged, and the leakage current problem was improved by suppressing excessive generation of oxygen vacancy. Furthermore, the voltage transfer curve was measured after fabricating the N-MOS logic inverter circuit, this inverter showed a value of 80.8% the total noise margin.
저진공 산소 플라즈마를 이용한 투명 인공지능 메모리 개발
이재윤(Jae-Yun Lee),TUKHTAEV ANVAR,ZHAO HANLIN,ISAMADDINOV SHUKHRAT,BERDIEV JONIBEK ELMURODOVICH,WANG XAIOLIN,SHAN FEI,최병근(Choi Byung Geun),김용환(Yong-Hwan Kim),김성진(Sung-Jin Kim) 한국통신학회 2022 한국통신학회 학술대회논문집 Vol.2022 No.2
본 논문에서는 고성능/고용량 투명 인공지능 메모리 칩 개발을 위해 TiO₂/TiO2-x 박막 구조를 기반으로 한 저항 변화형 메모리를 제작하였으며, TiO2-x 활성층 박막에 저진공 산소 플라즈마 처리를 하여 인가하는 RF power에 따른 저항 변화형 메모리 디바이스의 전기적, 표면적 성능 분석하였다. 인가하는 RF power의 세기가 클수록 hysteresis area가 크게 나타났으며, TiO2-x 박막 표면의 RMS 값이 감소하는 결과를 보였다.
Analysis of phototransistors fabricated based on IGZO semiconducting films
Gergely Tarsoly(터르쇼 게르게이),Jae-Yun Lee(이재윤),TUKHTAEV ANVAR,ZHAO HANLIN,ISAMADDINOV SHUKHRAT,BERDIEV JONIBEK ELMURODOVICH,WANG XAIOLIN,Choi Byung Geun(최병근),Yong-Hwan Kim(김용환),Sung-Jin Kim(김성진) 한국통신학회 2022 한국통신학회 학술대회논문집 Vol.2022 No.11
Xiao-Lin Wang,Shan Fei,Zhao Han-Lin,Lee Jae-Yun,Yoo Suchang,Ryu Heung Gyoon,Choi Seungkeun,Anvar Tukhtaev,Kim Sung-Jin 대한금속·재료학회 2022 ELECTRONIC MATERIALS LETTERS Vol.18 No.5
A high-performance indium oxide (In 2 O 3 )-based thin-film transistor (TFT) was prepared with aluminum oxide/fluorinated self-assembled monolayer (Al 2 O 3 /F-SAM) double-gate dielectric layer. The Al 2 O 3 /F-SAM double gate dielectric layer improved the performance of the In 2 O 3 -based TFT by reducing the device leakage current. In addition, devices with a double-gate dielectric layer show improved stability under negative bias stress testing compared to devices with a single gate dielectric layer (Al 2 O 3 ), shifting a threshold voltage by only 0.4 V. These results suggest that the Al 2 O 3 /F-SAM doublelayer gate dielectric layer can enhance the performance of In 2 O 3 -based TFTs. Furthermore, it can be used to improve the performance of other metal oxide-based devices by minimizing the leakage current at low operating voltages at low cost.