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Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors
Shan, Fei,Kim, Sung-Jin The Korean Institute of Electrical Engineers 2017 Journal of Electrical Engineering & Technology Vol.12 No.6
A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.
Fei Shan,김성진,Yu Zhao,김남,최성곤,장승욱 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.70 No.9
A pre-annealing manufacturing process is applied to enhance the electrical characteristics of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). We show here a fast and stable pre-annealing process using a femtosecond laser to maintain electrical stability and improve electrical performance. Furthermore, the femtosecond-laser pre-annealing process is a fast preparation method that has greater flexibility and development space for semiconductor production activity. Pre-annealed IZO TFTs show a field-effect mobility of 3.75 cm2/Vs, an on-current/offcurrent (Ion/Ioff ) ratio greater than 105, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Moreover, the femtosecond laser pre-annealing, which provides better electrical stability in the solution-processed IZO TFTs, is discussed.
Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors
Fei Shan,Sung-Jin Kim 대한전기학회 2017 Journal of Electrical Engineering & Technology Vol.12 No.6
A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process–based IZO TFTs exhibit a field-effect mobility of 3.75 cm²/Vs, an Ion/Ioff ratio of 1.77 × 10<SUP>5</SUP>, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZObased inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.
Fei Shan,이재윤,Han-Sang Kim,Hao-Zhou Sun,Seong Gon Choi,Kwan-Jun Heo,Jung-Hyuk Koh,Sung-Jin Kim 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.3
We report on a method for fabricating solution-processed triple-multi-stacked indium zinc oxide (IZO) thin-fi lm transistors(TFTs) at a low annealing temperature using an oxygen plasma treatment technique at diff erent RF power levels of 120 W,150 W, 180 W, and 210 W. The oxygen plasma post-treatment is an additional process to optimize the surface state of IZOfi lms and to improve the electrical performance of the TFT device after using a low-temperature solution process insteadof a high-temperature annealing process. The plasma-treated TFT device exhibits improved electrical performance, withmobility of 5.1 ± 0.5 cm 2 /Vs, an on/off ratio of 2.5 × 10 8 , a threshold voltage of 2.6 ± 1.3 V, and a subthreshold swing of0.6 ± 0.1 V/dec when the RF power is 150 W. Therefore, the multi-stacked activity structure and the low RF power plasmapost-treatment process provides a simple and effi cient fabrication method that reduces the processing temperature, improvesthe electrical properties, and can be widely used in fl exible electronic devices.
Multi-Stacking Indium Zinc Oxide Thin-Film Transistors Post-Annealed by Femtosecond Laser
Fei Shan,이재윤,Han‑Lin Zhao,Seong Gon Choi,Jung‑Hyuk Koh,Sung‑Jin Kim 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.5
Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process onsilicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical propertiesand the stability of the device. The experimental results show that the electrical properties of the device are improvedoptimally when 100-s laser post-annealing treatment was carried out, and it had the best stability. The mobility was 5.23cm2/Vs, the threshold voltage was − 0.26 V, the stable subthreshold swing was 0.81 V/dec, and the electron mobility of thedevice stayed above 3.82 cm2/Vs after it was exposed to air for 14 days.
Shan, Fei,Chang, Seung Wook,Koh, Jung-Hyuk,Kim, Sung-Jin American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.12
<P>We report on indium zinc oxide (IZO) semiconductor thin-film transistors (TFTs) prepared with different spin coating speeds in this study. The IZO TFTs were fabricated by a simple and effective solution processing technique and the highest annealing temperature used was 400 degrees C. We investigated the electrical performance of the IZO TFTs as a function of the spin coating speed. According to the obtained results, the most stable performance of the IZO TFTs, which were made by 2000 rpm spin coating speed, has high saturation mobility (2.10 cm(2)/Vs), low subthreshold swing (0.59 V/dec.), and high on-off current ratio (2.6x10(7)). We measured the time, annealing temperature, and the electrical performance dependence of the spin coating speed. The obtained results demonstrate that the electrical performance of the TFTs could be enhanced by applying an appropriate spin coating speed as well as by improving the experimental parameters.</P>