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Glass/Al/Al₂O₃/a-Si 구조의 알루미늄유도 결정화에서 산화막 두께 변화가 실리콘 결정립에 미치는 영향
오광환(Oh Kwang Hwan),정혜정(Jeong Hyejeong),지은옥(Chi Eun-Ok),김지찬(Kim Ji Chan),부성재(Boo Seongjae) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.4
Characteristics of crystallization of amorphous silicon (a-Si) utilizing aluminum-induced crystallization (AIC) and layer exchange process with a glass/Al/Ox/a-Si structure are investigated in this paper. The fabrication of polycrystalline silicon (pc-Si) seed layer for a pc-Si thin film solar cell with the maximum grain size of 45 ㎛ in length is carried out by appropriately adjusting the oxide film thickness and annealing temperature. Aluminum oxide (Al₂O₃) film which plays a significant role as the buffer layer between Al and amorphous silicon (a-Si) films was sputtered on the Al/glass bilayer with the different thicknesses. The a-Si was deposited on the Al₂O₃ thin film by plasma enhance chemical vapor deposition (PECVD) method. The workpieces were heated for two hours to induce AIC process at three different temperatures of 450, 500 and 550℃. Once the a-Si was crystallized by AIC process, the silicon peak of 520 ㎝?¹ from Raman spectroscopy analysis was detected regardless of Al₂O₃ layer thickness even if the degree of crystallization can exist. The Si grains with an average size ranging from 25 to 45 ㎛ can be fabricated with the same thickness ratio of a-Si/Al. From X-ray diffraction (XRD) data, the dominant crystal orientation of Si(111) together with Si(202), Si(220), Si(311) and Si(400) is found at the relatively high temperature over 500℃ whereas no Si crystal peak except Si(202) can be obtained at 450℃ after annealing. The effects of process variables such as buffer layer thickness, annealing temperature and heating time upon the AIC results including grain size and orientation of pc-Si are demonstrated in detail.
오광환(Oh, Kwang H.),정혜정(Jeong, Hyejeong),지은옥(Chi, Eun-Ok),김지찬(Kim, Ji Chan),부성재(Boo, Seongjae) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.06
Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/SiO₂/a-Si, in which the SiO₂ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the SiO₂ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of 3{sim}4{mu}m under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/SiO₂/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, SiO₂ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a 30{times}30 micron-sized hole array with a diameter of 1{sim}2{mu}m was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of 3{sim}4{mu}m with the workpiece.