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측온저항체 온도센서용 Pt-Co 합금박막의 증착과 특성에 관한 연구
정귀상,노상수 ( Gwiy Sang Chung,Sang Soo Noh ) 한국센서학회 1998 센서학회지 Vol.7 No.1
Platinum-Cobalt alloy thin films were deposited on Al₂O₃ substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al₂O₃ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : 4.4 W/㎠, Co : 6.91 W/㎠, working vacuum of 10 mTorr and annealing conditions of 800℃: and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was 15μΩ·cm and 0.5Ω/□, respectively and the TCR value of Pt-Co alloy thin films with thickness of 3000Å were 3740ppm/℃ in the temperature range of 25∼600℃. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.
열처리 조건에 따른 백금박막 측온저항체 온도센서의 특성에 관한 연구
정귀상,노상수 ( Gwiy Sang Chung,Sang Soo Noh ) 한국센서학회 1997 센서학회지 Vol.6 No.2
Platinum thin films were deposited on SiO₂/Si and Al₂O₃ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on Al₂O₃ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25∼400℃, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of 1000℃, time of 240min and thin film thickness of l㎛, we obtained TCR value of 3825ppm/℃ close to the Pt bulk value.
알루미늄산화막을 매개층으로 이용한 백금 미세발열체의 특성
정귀상,노상수,최영규,김진한 ( Gwiy Sang Chung,Sang Soo Noh,Young Kyu Choi,Jin Han Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.5
The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature(400∼800℃) by four point probe, SDM and XRD. Under 600 ℃ of annealing temperature. aluminum oxide had the properties of improving Pt adhesion to SiO₂ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over 700℃ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, 200㎛ X 200㎛ was up to 400℃ with 1.5watts of the heating power.