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      • KCI등재

        LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성

        정귀상,김강산,Chung Gwiy-Sang,Kim Kang-San 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.8

        This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

      • 과부하 방지용 마이크로머시닝 세라믹 박막형 압력센서

        정귀상 東西大學校 2002 동서논문집 Vol.8 No.-

        This paper describes on the fabrication and characteristics of ceramic thin-film pressure sensors based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto micromachined Si diaphragms with buired cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB (Si-wafer Direct Bonding) and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stablilty and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21 mV/V·kgf/㎠ in the temperature range of 25∼200℃ and the maximum non-linearity is 0.43 %FS.

      • TMAH/IPA의 실리콘 이방성 식각특성

        정귀상,박진성,최영규 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.5

        This paper describes the anisotropic etching characteristics of Si in acqueous TMAH/IPA solutions. The etch rates of (100) oriented Si crystal planes decrease with increasing TMAH concentration and IPA concentration. Etchant concentration and etch temperature have a large effect on hillock density. Hillock density strongly increase with lower TMAH concentration and higher etch temperature. The etched (100) planes are covered by pyramidal-shaped hillocks below TMAH 15 wt.%, but very smooth surface is obtained TMAH 25 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes. Undercutting ratio of pure TMAH solution is much higher than KOH. But, addition of IPA to TMAh the underrcutting ratio reduces by a factor of 3∼4. Therefore, acqueous TMAH/IPA solution is able to use as anisotropic etchant of Si because of full compability with IC fabrication process.

      • KCI등재후보

        극한 환경 MEMS용 SiCOI 구조 제작

        정귀상,정연식,류지구 한국센서학회 2004 센서학회지 Vol.13 No.4

        This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure this is because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3C-SiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD and SEM

      • KCI등재

        HMDS 단일 전구체를 이용한 다결정 3C-SiC 박막 성장

        정귀상,김강산,한기봉,Chug, Gwiy-Sang,Kim, Kang-San,Han, Ki-Bong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2

        This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

      • KCI등재후보

        열처리 조건에 따른 백금박막 측온저항체 온도센서의 특성에 관한 연구

        정귀상,노상수 한국센서학회 1997 센서학회지 Vol.6 No.2

        Platinum thin films were deposited on SiO₂/Si and Al₂O₃ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on Al₂O₃ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of 25∼400℃, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of 1000℃, time of 240min and thin film thickness of l㎛, we obtained TCR value of 3825ppm/℃ close to the Pt bulk value.

      • KCI등재

        적층형 세라믹 엑추에이터를 이용한 MEMS용 압전밸브의 제작 및 특성

        정귀상,김재민,윤석진 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.5

        We report on the development of a Piezoelectric valvc that is designed to have a high reliability for fluid control systems, such as mass flow control, transportation and chemical analysis. The valve was fabricated using a MCA(multilayer ceramic actuator), which has a low consumption power, high resolution and accurate control. The fabricated valve is composed of MCA, a valve actuator die and an seat die. The design of the actuator dic was done by FEM(finite element method) modeling, respectively. And, the valve seat die with 6 trenches was made. and the actuator die, which possible to optimize control to MCA, was fabricated. After Si-wafer direct bonding between the seat die and the actuator die, MCA was also anodic bonded to the scat/actuator die structure. PDMS(poly dimethylsiloxane) sealing pad was fabricated to minimize a leak-rate. It was also bonded to scat die and stainless steel package. The flow rate was 9.13 sccm at a supplied voltage of 100 V with a 50 % duty ratio and non-linearity was 2.24 % FS. From these results, the fabricated MCA valve is suitable for a variety of flow control equipments, a medical bio-system, semiconductor fabrication process, automobile and air transportation industry with low cost, batch recess and mass production.

      • KCI등재후보

        TMAH/IPA/pyrazine 용액에서의 전기화학적 식각정지특성

        정귀상,박진성 한국센서학회 1998 센서학회지 Vol.7 No.6

        This paper describes electrochemical etch-stop characteristics in TMAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in TMAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -l.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in TMAH/TPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vo1.%/pyrazine 0.1g/100ml, thus the elapsed time of etch-stop was reduced.

      • SDB와 전기화학적 식각정지에 의한 마이크로 시스템용 매몰 cavity를 갖는 SOI구조의 제조

        정귀상 東西大學校 2001 동서논문집 Vol.7 No.-

        This paper describes a new process technique for batch fabrication of SOI(Si-on-insulator) structures with buried cavities for MEMS (micro electro mechanical system) applications by SDB (Si-wafe direct bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were maked on the upper handing wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annaling (1000℃, 60 min.), the SBB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure is more uniform that of gliding or polishing by mechanical method. This SBB SOI structure with buried cavities will provides a powerful and versatile substrate for novel microsensors and microactuators.

      • KCI등재후보

        Silicon-Wafer Direct Bonding for Single-Crystal Silicon-on-Insulator Transducers and Circuits

        정귀상,Chung, Gwiy-Sang,Nakamura, Tetsuro The Korean Sensors Society 1992 센서학회지 Vol.29 No.3

        본 논문은 SOI트랜스듀서 및 회로를 위해, Si 직접접합과 M-C국부연마법에 의한 박막SOI구조의 형성 공정을 기술한다. 또한, 이러한 박막SOI의 전기적 및 압저항효과 특성들을 SOI MOSFET와 cantilever빔으로 각각 조사했으며, bulk Si에 상당한다는 것이 확인되었다. 한편, SOI구조를 이용한 두 종류의 압력트랜스듀서를 제작 및 평가했다. SOI구조의 절연층을 압저항의 유전체분리층으로 이용한 압력트랜스듀서의 경우, $-20^{\circ}C$에서 $350^{\circ}C$의 온도범위에 있어서 감도 및 offset전압의 변화는 자각 -0.2% 및 +0.15%이하였다. 한편, 절연층을 etch-stop막으로 이용한 압력트랜스듀서에 있어서의 감도변화를 ${\pm}2.3%$의 표준편차 이내로 제어할 수 있다. 이러한 결과들로부터 개발된 SDB공정으로 제작된 SOI구조는 집적화마이크로트랜스듀서 및 회로개발에 많은 장점을 제공할 것이다. This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

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