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전력계통 운전환경 분석을 통한 계통안정화 ESS 배터리 수명 산정기준 수립
노상수,한재웅,조민승,송화창 대한전기학회 2023 전기학회논문지 Vol.72 No.3
KEPCO is pursing 970MW ESS(Energy Storage System, 전기저장장치) for system stabilization in order to maintain stable frequency due to expansion of renewable energy and to alleviate power generation constraints on the East Coast. The ESS battery charging and discharging usage pattern depends on the frequency variation trend and the frequency of generator dropout, and the battery life is calculated according to the usage pattern and the appropriate installation quantity is calculated based on this. In this paper, the battery life calculation standard suitable for ESS stabilizing power system is established considering the frequency in the steady state and the generator dropout in the transient state. It is expected that large-scale ESS will be constructed efficiently and operated stably by calculating and applying appropriate ESS battery installation quantity which has best value for actual operation.
고정밀 레이저 가공 기술을 이용한 PRT 제작 및 특성 분석
노상수,서정환,정귀상,김광호 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1
In this paper, we fabricated PRT(platinum resistance thermometers) with the trimming technology using high fine laser system. U. V.(wavelength: 355nm) laser was mainly used for adjusting Pt thin films resistors to 100Ω at 0$^{\circ}C$. Internationally, the accepted A-class tolerance of temperature sensor is ${\pm}$0.06Ω at 0$^{\circ}C$. according to DIN EN 60751. The width of trimmed lines was about 10$\mu\textrm{m}$ and the best trimming conditions of Pt thin films were power : 37mW, frequency : 200Hz and bite size:1.5$\mu\textrm{m}$. And 96 resistors, fabricated by photolithography and etching process, have 79∼90Ω and 91∼102Ω as the proportion of 45.7% and 57.3%, respectively. As result of sitting Pt thin films resistors to the target value(109.73Ω at 25$^{\circ}C$), 82.3% of all resistors had the tolerance within ${\pm}$0.03Ω and the others(17.7%) were within ${\pm}$0.06Ω of A-class tolerance. The PRTs which wore fabricated in this research had excellent characteristics as follows; high accuracy, international standard TCR(temperature coefficient of resistance) value, long-term stability, wide temperature range, good linearity and repeatability, rapid response time, etc.
노상수,김동현,정귀상,김형표,김광호 한국센서학회 2002 센서학회지 Vol.11 No.6
본 논문에서는 백금박막 온도센서의 0℃, 100Ω 세팅을 위해 355nm 파장을 갖는 자외선 레이져를 이용하였다. 국제적으로 온도센서의 A-class 기준오차는 0℃에서 ±0.06Ω 이다. 실제적으로 이 값은 0.15℃ 이하에 해당하는 오차로 저항체 제작시 고정밀 가공 기술을 필요로 한다. 가공에 이용된 355nm DYP(Diode-Pumped YAG) 레이져는 power : 37mW, rep, rate 주파수; 200Hz 그리고 bite size : 7.5㎛에서 1~l.5㎛ 두께의 백금박막을 가장 안전하게 가공할 수 있었으며 가공선폭은 10㎛ 안팍임을 확인하였다. 그리고 사진식각 공정기술을 이용하여 제작된 2″x 2″기판내의 96개(4 by 24) 저항체는 상온 25℃에서 79~90Ω : 42.7%, 91~102Ω : 57.3%의비율로 각각 제작되어졌다. 109.73Ω를 목표값으로 25℃에서 자외선 레이저를 이용하여 가공한 결과 82.3%가 가공오차가 ±0.03Ω이하에 들어왔으며 나머지 17.7%도 국제규격 A-Class내인 ±0.06Ω내에 포함되었다. In this paper, we used U.V.(wavelength, 355nm) laser for adjusting Pt thin films temperature sensor to 100Ω at 0℃. Internationally, A-class tolerance of temperature sensor is ±0.06Ω at 0℃. This is under value of 0.15℃, actually, so high-fine trimming technology is essential to this process. The width of trimmed lines was about 10㎛ and the best trimming of Pt thin films of 1~1.5㎛ was carried out with power : 35mW, rep. rate frequency : 200Hz and bite size : 1.5㎛ . And using photolithography process, 96 resistors were fabricated in 2″x 2″substrate as the proportion of 79~90Ωand 91~102Ω is 42.7% and 57.3%, respectively. As result of trimming resistors to the target value of 109.73Ω at 25℃, 82.3% of resistors had the tolerance within ±0.03Ω and the others(17.7%) were within ±0.06Ω of A-class tolerance.
노상수,서정환,이응안 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.4
The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at 900oC with a pressure of 4 torr using SiH2Cl2 (100%, 35 sccm) and C2H2 (5% in H2, 180 sccm) as the Si and C precursors, and NH3 (5% in H2, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 Å thickness was 32.7 Ω-cm and decreased to 0.0129 Ω-cm at 16,963 Å. The measurement of the resistance variations at different thicknesses were carried out within the 25oC to 350oC temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a Si3N4 membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ㎛ⅹ250 ㎛ Si3N4 membrane was 410oC at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.
Formation of nickel oxide thin film and analysis of its electrical properties
노상수,서정환,이응안,이선길,박용준 한국센서학회 2005 센서학회지 Vol.14 No.2
Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of 10.5 μΩcm to 2.84 × 104 μΩcm according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/oC to 5,630 ppm/oC in the temperature range of 0~150 oC. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
노상수,최영규,정귀상 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
Pt thin films flow sensors were fabricated by using aluminum oxide films as medium layer and their characteristics were investigated after annealing at 600 ℃ for 60min. Aluminum oxide improved adhesion of Pt thin films to SiO_(2) layer without any chemical reactions to Pt thin films under high annealing temperatures. Output voltages increased as gas flow rate and gas conductivity increased because heat loss of heater, which was integrated with a sensing resistor in the flow sensor, increased. Output voltage of flow sensor fabricated on membrane strucrure was 101mV at O_(2) flow rate of 2000sccm, heating power of 0.8W while flow sensor fabricated on Si substrate without membrane had output voltage of 78mV under the same conditions.