하악의 치성각화낭에서 밴드 및 캐뉼라 장치를 이용한 감압술: 증례보고

윤지언,홍기은,박준,신은섭,김철훈,김복주,김정한 대한통합치과학회 2021 대한통합치과학회지 Vol.10 No.3

Depending on the size and location of the odontogenic cyst on oral and maxillofacial region, cyst enucleation can be used or cyst enucleation after decompression or marsupialization can be used. In young patients, complications such as growth disturbance, abnormal permanent tooth eruption, anatomical structure damage could occur when cyst enucleation is performed in large dentigerous cysts or odontogenic keratocysts. In this case, marsupialization or decompression can be performed. An 8-year old male patient who has radiolucent lesion on mandible left visited. On the radiograph, the lesion was 40 mm×23 mm size in size from below #75 to below #37 with cortical thinning and expansion. It was diagnosed as odontogenic kearatocyst. Decompression using customized band and cannula device was performed. 7 months after decompression, cyst enucleation was done. Bone healed without complications such as anatomical structure change.

TiO₂ Buffer Layer의 후열처리 온도 증가에 따른 PLZT 박막의 유전특성에 대한 연구

윤지언,이인석,김상지,손영국,Yoon, Ji-Eon,Lee, In-Seok,Kim, Sang-Jih,Son, Young-Guk 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.6

본 연구에서는 PLZT 박막이 $(Pb_{0.92}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ 조성의 타겟을 이용한 R.F. 마그네트론 스퍼터링공정에 의해 실리콘 웨이퍼 위에 증착되었다. PLZT 박막의 강유전특성을 향상시키기 위해 buffer layer인 $TiO_2$ 층이 사용되었으며, buffer layer의 후열처리온도 변화에 따른 PLZT 박막의 결정성과 유전특성이 연구되었다. buffer layer이 삽입되지 않은 PLZT 박막의 잔류분극값은 $19.13{\mu}C/cm^2$ 이었으며, 반면 $TiO_2$ buffer layer을 삽인한 후 후열처리 온도를 $600^{\circ}C$로 증가시킨 PLZT 박막의 잔류분극값은 $146.62{\mu}C/cm^2$까지 크게 증가하였다. 하부전극 백금(Pt)과 PLZT 박막층 사이에 삽입된 $TiO_2$ buffer layer의 특성과 PLZT 박막의 유전특성에 미치는 영향을 살펴보기 위해 글로우 방전 분광법 (glow discharge spectroscopy, GDS)이 PLZT 박막(PLZT/($TiO_2$)/Pt/Ti/$SiO_2$/Si wafer)에 대해 수행 되었다. $(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

데이터 마이닝 기법을 적용한 재생골재 콘크리트 압축강도예측에 관한 연구 - 신경망과 회귀분석 기법을 중심으로 -

윤지언(Yoon Jie-Eon),강경인(Kang Kyung-In) 대한건축학회 2005 大韓建築學會論文集 : 構造系 Vol.21 No.10

TiO₂ Buffer Layer의 후열처리 온도 증가에 따른 PLZT 박막의 유전특성에 대한 연구

윤지언(Ji-Eon Yoon),이인석(In-Seok Lee),김상지(Sang-Jih Kim),손영국(Young-Guk Son) 한국진공학회(ASCT) 2008 Applied Science and Convergence Technology Vol.17 No.6

본 연구에서는 PLZT 박막이 (Pb0.92La0.08)(Zr0.65Ti0.35)O₃ 조성의 타겟을 이용한 R.F. 마그네트론 스퍼터링공정에 의해 실리콘 웨이퍼 위에 증착되었다. PLZT 박막의 강유전특성을 향상시키기 위해 buffer layer인 TiO₂ 층이 사용되었으며, buffer layer의 후열처리온도 변화에 따른 PLZT 박막의 결정성과 유전특성이 연구되었다. buffer layer이 삽입되지 않은 PLZT 박막의 잔류분극값은 19.13 μC/㎠이었으며, 반면 TiO₂ buffer layer을 삽인한 후 후열처리 온도를 600℃로 증가시킨 PLZT 박막의 잔류분극값은 146.62 μC/㎠까지 크게 증가하였다. 하부전극 백금(Pt)과 PLZT 박막층 사이에 삽입된 TiO₂ buffer layer의 특성과 PLZT 박막의 유전특성에 미치는 영향을 살펴보기 위해 글로우 방전 분광법 (glow discharge spectroscopy, GDS)이 PLZT 박막(PLZT/(TiO₂)/Pt/Ti/SiO₂/Si wafer)에 대해 수행 되었다. (Pb0.98La0.08)(Zr0.65Ti0.35)O₃ (PLZT) thin films with TiO₂ buffer layers were deposited on Pt/Ti/SiO₂/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of TiO₂ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of TiO₂ layers, thereby reaching their maximum at 600℃

항혈소판 및 항응고제 복용하는 환자의 치과시술 후의 출혈 경향에 대한 후향적 평가

김경진,윤지언,박준,홍기은,김철훈,김정한,김복주 대한통합치과학회 2020 대한통합치과학회지 Vol.9 No.3

Patients with cardiovascular disease who take antiplatelets and anticoagulants are known to have an increased risk of bleeding from open dental surgery. This study is aimed at aiding the analysis of the tendency toward bleeding among patients taking antiplatelets and those taking anticoagulants and to develop guidelines related to drug management during their actual clinical dental care. A total of 413 patients over 65 years of age who visited the Oral and Maxillofacial Surgery Clinic at our hospital from January through December 2018, and underwent extraction and implant surgery participated. This included patients diagnosed with cardio-cerebral vascular disease who were prescribed antiplatelet and anticoagulant drugs. The medical histories of these patients were analyzed to evaluate the tendency toward bleeding depending on the type of drug, whether or not the drug was discontinued, and type of surgery (tooth extraction, implant). In the case of antiplatelet drugs, a total of 113 patients were included, and none of them returned to the hospital due to bleeding, even though the drug was discontinued. A total of 42 patients on anticoagulants were included, of which 2 (4.8%) returned to the hospital with bleeding but the bleeding was controlled through the appropriate hemostatic procedures. Statistically, the type of drug, the presence or absence of drug discontinuation, type of surgery, and occurrence of bleeding after dental surgery were not significant. Therefore, the risk of bleeding during tooth extraction and implant surgery is not significant, based on the findings of this investigation. Therefore, the drug should not be necessarily discontinued if discontinuation of antithrombotic agents increases the patient’s systemic risk, such as for the recurrence of cardiovascular blood clots.

기판온도에 따른 PLZT 박막의 결정성과 전기적 특성

이인석,윤지언,김상지,손영국,Lee, In-Seok,Yoon, Ji-Eun,Kim, Sang-Jih,Son, Young-Guk 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

TiO₂Interlayer의 상변화에 따른 PLZT 박막의 구조 및 전기적 특성

손영국,윤지언,황동현,차원효,이철수 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.6

(Pb1.1,La0.08)(Zr0.65.Ti0.35)O3 thin films on the Pt/Ti/SiO2/Si, TiO2(interlayer)/Pt/Ti/SiO2/Si substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on TiO2 interlayer. Changing the deposition conditions of TiO2 interlayer, we obtained TiO2 anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate PLZT-TiO2, TiO2-Pt interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on TiO2 anatase interlayer was found to have (110)-preferred orientation and 12.6 μC/cm2 remaining polarization value. KeyWords:PLZT, RF magnetron sputtering, TiO2 interlayer R.F. magnetron-sputtering 방법에 의해 (Pb1.1,La0.08)(Zr0.65.Ti0.35)O3 박막을 Pt/Ti/SiO2/Si, TiO2(interlayer)/Pt/Ti/SiO2/Si 기판에 증착하고, TiO2 interlayer에 의한 PLZT 박막의 특성을 고찰 하였다. TiO2 interlayer의 증착조건을 변화시켜가며 단일상의 anatase 상과 rutile 상을 증착하였고, 그 위에 증착시킨 PLZT 박막의 결정성을 x-ray diffraction(XRD)을 통해 분석하였다. 또한 TiO2 interlayer에 의한 PLZT-TiO2, TiO2-Pt 박막의 계면상태를 고찰하기 위해 glow discharge spectrometer(GDS) 분석을 행하였고, PLZT의 강유전 특성을 고찰하기 위해 전기적 측정을 행하였다. TiO2 anatase 단일 상에 증착한 PLZT의 경우 (110) 방향으로 우선 배향됨을 알 수 있었고, 12.6 μC/cm2의 잔류분극 값을 나타내었다.

RF Magnetron Sputtering법으로 제작된 (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃ 박막의 Ar/O₂ 분압비에 따른 강유전 특성연구

김상지,윤지언,황동현,이인석,안정훈,손영국,Kim, Sang-Jih,Yoon, Ji-Eon,Hwang, Dong-Hyun,Lee, In-Seok,Ahn, Jung-Hoon,Son, Young-Guk 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.2

rf magnetron sputtering 법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 buffer layer인 $TiO_2$ 층을 증착한 후 PLZT 강유전체 박막을 증착하였다. PLZT 박막 증착 시 가스 분압비가 박막의 특성에 미치는 영향을 알아보기 위해 Ar/$O_2$ 분압비를 각각 27/1.5 sccm, 23/5.5 sccm, 21/7.5 sccm, 19/9.5 sccm로 변화시키면서 박막을 증착하였다. 이들 박막의 구조적인 특성을 분석하기 위해 X-선 회절법을 사용하였으며 FE-SEM을 이용하여 입자상을 관찰하였다. 또한 박막의 유전특성을 분석하기 위해 Precision LC를 이용하여 이력곡선, 잔류분극, 누설전류를 측정하였다. 산소 분압이 높아질수록 박막의 결정성 및 치밀성이 저하되었으며, (110) 방향에서 (111) 방향으로 우선배향성이 변화하는 것을 확인하였다. 산소 분압비의 변화는 박막 표면 및 강유전 특성에 영향을 미치는 것으로 판단된다. PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

TiO₂ Interlayer의 상변화에 따른 PLZT 박막의 구조 및 전기적 특성

이철수,윤지언,황동현,차원효,손영국,Lee, Chul-Su,Yoon, Ji-Eon,Hwang, Dong-Hyun,Cha, Won-Hyo,Sona, Young-Gook 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.6

R.F. magnetron-sputtering 방법에 의해 $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ 박막을 $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ 기판에 증착하고, $TiO_2$ interlayer에 의한 PLZT 박막의 특성을 고찰 하였다. $TiO_2$ interlayer의 증착조건을 변화시켜가며 단일상의 anatase 상과 rutile 상을 증착하였고, 그 위에 증착시킨 PLZT 박막의결정성을 x-ray diffraction(XRD)을 통해 분석하였다. 또한 $TiO_2$ interlayer에 의한 $PLZT-TiO_2$, $TiO_2-Pt$ 박막의 계면상태를 고찰하기 위해 glow discharge spectrometer(GDS) 분석을 행하였고, PLZT의 강유전 특성을 고찰하기 위해 전기적 측정을 행하였다. $TiO_2$ anatase 단일 상에 증착한 PLZT의 경우 (110) 방향으로 우선 배향됨을 알 수 있었고, 12.6 ${\mu}C/cm^2$의 잔류분극 값을 나타내었다. [ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

ITO 기판에 제작된 PLZT 박막의 후열처리 온도에 따른 전기적 특성평가

차원효,윤지언,황동현,이철수,이인석,손영국,Cha, Won-Hyo,Youn, Ji-Eon,Hwang, Dong-Hyun,Lee, Chul-Su,Lee, In-Seok,Sona, Young-Guk 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.1

R.F 마그네트론 스퍼터링 방법을 이용하여 Indium tin oxide(ITO)가 증착된 유리기판 위에 PLZT ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) 박막을 제작하였다. 기판온도를 $500^{\circ}C$로 고정하여 증착한 후 급속열처리 방법으로 다양한 온도 ($550-750^{\circ}C$)에서 후열처리 하였다. 후열처리온도의 변화에 따른 PLZT 박막의 결정학적 특성을 X선 회절법을 통하여 분석하였고 원자간력 현미경을 이용하여 박막의 표면 상태를 관찰하였다. 또한 precision material analyzer 을 이용하여 분극이력곡선과 피로특성을 측정하였다. 후 열처리 온도가 증가함에 따라 잔류분극 값(Pr)은 $10.6{\mu}C/cm^2$ 에서 $31.4{\mu}C/cm^2$로 증가하였으며 항전계(Ec)는 79.9 kV/cm에서 60.9 kV/cm로 감소하는 경향을 보였다. 또한 피로특성의 경우 1MHz 주파수에서 ${\pm}5V$의 square wave를 인가하여 측정한 결과 $700^{\circ}C$에서 후열처리한 시편의 경우 $10^9$회 이상의 분극반전을 거듭하였을 때 분극값이 15% 감소하는 결과를 나타내었다. Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.