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실리콘이 코팅된 흑연의 열처리 효과에 따른 전기화학적 특성에 대한 연구
이명로,변동진,전법주,이중기,Lee Myungro,Byun Dongjin,Jeon Bub Ju,Lee Joong Kee 한국재료학회 2005 한국재료학회지 Vol.15 No.1
Surface modification of the silicon-coated graphite was carried out at $200^{\circ}C\~800^{\circ}C$ under hydrogen atmosphere. The silicon-coated graphites were prepared by fluidized-bed spray coating method. The components of silicon films prepared on the graphite consist of SiO, $SiO_x\;(1<x<2)\;and\;SiO_2$. The components of silicon films at $200^{\circ}C$ of heat treatment brought on the higher fraction of SiO and $SiO_x$ than that of $SiO_2$. However, inactive $SiO_2$ fraction increases with increase of the heat treatment temperature. The high content of SiO and $SiO_x$ in the silicon film on graphite leads to the higher discharge capacity in our experimental range.
PECVD법으로 구리 막 위에 증착된 실리콘 박막의 이차전지 음전극으로서의 전기화학적 특성
심흥택,전법주,변동진,이중기,Shim Heung-Taek,Jeon Bup-Ju,Byun Dongjin,Lee Joong Kee 한국전기화학회 2004 한국전기화학회지 Vol.7 No.4
플라즈마 화학 기상 증착법으로 구리 막$(foil,\;35{\mu}m)$표면 위에 $SiH_4$와 Ar혼합가스를 공급하여 실리콘 박막을 증착 한 후 리튬 이온전지의 음극으로 활용하였다. 증착 온도에 따라 비정질 실리콘 박막과 copper silicide박막 형태의 다른 두 종류의 실리콘 박막 구조가 형성되는 것이 관찰되었다. $200^{\circ}C$ 이하의 온도에서는 비정질 실리콘 박막이 증착되었고, $400^{\circ}C$ 이상의 온도에서는 실리콘 라디칼과 확산된 구리 이온의 반응에 의한 그래뉼러 형태의 copper silicide박막이 형성되었다. 비정질 실리콘 박막은 copper silicide박막 보다 높은 용량을 나타냈으나 충·방전 반응에 의한 급격한 용량 손실을 나타냈다. 이것은 비정질 실리콘 박막의 부피 팽창에 의한 것으로 추정된다. 그러나 copper silicide 박막을 음극으로 사용했을 때는 copper silicide를 형성한 실리콘과 구리의 화학결합이 막 구조의 부피변화를 감소 시켜줄 뿐 아니라 낮은 전기 저항을 갖기 때문에 싸이클 특성이 향상되었다. Silicon thin film were synthesized from silane and argon gas mixture directly on copper foil by rf PECVD and then lithium ion batteries were prepared from them employed as the negative electrodes without any further treatment. In the present study, two different kinds of silicon thin films, amorphous silicon and copper silicide were prepared by changing deposition temperature. Amorphous silicon film was prepared below $200^{\circ}C$, but copper silicide film with granular shape was formed by the reaction between silicon radical and diffused copper ions under elevating temperature above $400^{\circ}C$. The amorphous silicon film gives higher capacity than copper silicide, but the capacity decreases sharply with charge-discharge cycling. This is possibly due to severe volume changes. The cyclability is improved, however, by employing the copper silicide as a negative electrode. The copper silicide plays an important role as an active material of the electrode, which mitigates volume change cause by the existence of silicon and copper chemical bonding and provides low electrical resistance as well.
PET 기질의 전처리효과가 상온 ECR 화학증착법에 의해 증착된 구리박막의 계면접착력에 미치는 영향
현진,전법주,변동진,이중기,Hyun Jin,Jeon Bupju,Byun Dongjin,Lee Joongkee 한국재료학회 2004 한국재료학회지 Vol.14 No.3
Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.
연속 ECR-CVD 조업하에 RF-magnetron-sputter의 싸이클조업을 통해 PET위에 올려진 구리박막의 특성
명종윤,전법주,변동진,이중기,Myung JongYun,Jeon Bupju,Byun Dongjin,Lee Joongkee 한국재료학회 2005 한국재료학회지 Vol.15 No.7
Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetronsputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.
유기금속화학증착법으로 유리기판 위에 성장된 산화아연 하이브리드 구조의 광학적 전기적 특성
김대식,강병훈,이창민,변동진,Kim, Dae-Sik,Kang, Byung Hoon,Lee, Chang-Min,Byun, Dongjin 한국재료학회 2014 한국재료학회지 Vol.24 No.10
A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).
PSS 상 버퍼층 종류에 따른 GaN 박막 성장 특성 비교
이창민,강병훈,김대식,변동진,Lee, Chang-Min,Kang, Byung Hoon,Kim, Dae-Sik,Byun, Dongjin 한국재료학회 2014 한국재료학회지 Vol.24 No.12
GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.
다중 리플로우에 따른 Sn-Cu-(X)Al-(Y)Si/Cu 접합부 특성 연구
유동열(Dong-Yurl Yu),손준혁(Jun-Hyuk Son),고용호(Yong-Ho Ko),이창우(Chang-Woo Lee),변동진(Dongjin Byun),방정환(Junghwan Bang) 대한용접·접합학회 2020 대한용접·접합학회지 Vol.38 No.2
Joint properties of Sn-Cu-(X)Al-(Y)Si lead-free solder alloy were investigated for automotive electronics module. In this study, Sn-0.5Cu-(0.01, 0.03)Al-0.005Si(wt.%) alloys were then fabricated in the form of solder balls for reflow samples. To evaluation of solder joint properties, solder ball was attached to PCB finished with OSP Cu pad. The reflow process was performed for 40 s above 260.5 ℃. And solder joint was evaluated by repeating the reflow process up to 10 times. The melting temperatures of Sn-0.7Cu, 0.01 Al-0.005Si and 0.03Al-0.0.005Si were 227.5, 230.2 and 231.4 ℃, respectively. Initial microstructures are composed of β-Sn regions surrounded by eutectic networks with spherical Cu6Sn5 IMC particles. However, with the increasing Al content, refined eutectic β-Sn + Cu-Sn IMC networks were observed. The shear strength of Sn-0.5Cu-0.03Al-0.005Si solder joints was higher than Sn-0.5Cu-0.01Al-0.005Si and Sn-0.7Cu solder after 10 reflow test.