http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Semi-active Vibration Drug Delivery Device Design using a Micro-needle Fabrication and Array
성연욱,박진호,이혜진,Sung, Yeon-wook,Park, Jean Ho,Lee, Hye-Jin Institute of Convergence Technology 2011 융ㆍ복합기술연구소 논문집 Vol.1 No.1
Transdermal drug delivery device is a method of drug delivery through the skin. Skin has a very large area, so it is attractive route to drug delivery. When drug delivery through the skin, microneedle has a advantage that painless, constant drug deliver and penetration efficient; nevertheless the cost is expensive because fabrication process need a particular equipment and not suitable in mass production. This study shows microneedle fabrication process using convergence of general MEMS process and dicing process that can make 3-D sharp microneedle tip and this fabrication process suitable for mass production.
개미산 탈질에 의한 모의고준위폐액 내 Zr 및 Mo 제거 공정
이일희,김광욱,유재형,황두성,박진호 한국공업화학회 1998 응용화학 Vol.2 No.2
In this study, the denitration tests of the raffinate aqueous solution from the TBP solvent extraction part by formic acid were carried out to know the behavior of the minor actinides aud the occurable troubles on the interface between the processes. As a result, the denitration reaction occured much more dratically comparing with the reaction in the cold tests. This was considered to be due to the presence of some amount of products of TBP destruction and some metal complex solvates with TBP. It was found that the of optimum condition was the 1.5 molar ratio of [HCOOH]/[HNO₃] and 2.5 hours denitration as the cold test. At this condition, acidity of denitrated solution could be reduced to 0.44M, which provided a favorable condition for the following steps of the partitioning process. Zirconium and molybdenum could be removed over 99% and 95%, respectively. Also, minor actinide elements as americium and neptunium were not precipitated.
Ga/In 합금 원료를 사용한 GaxIni-xAs Hydride VPE 증착 공정의 열역학적 해석
박진호,이진욱 嶺南大學校 工業技術硏究所 1996 工業技術硏究所論文集 Vol.24 No.1
A complex chemical equilibrium analysis was performed to study the hydride vapor phase epitaxy (VPE) of ?? based on the utilization of Ga/In alloys as the group Ⅲ source. The effects of process variables(i.e., source alloy composition, deposition temperature, and inlet mole fractions of HC1 and AsH₃) on the ternary solid composition were investigated. The deposited film composition was found to be very sensitive to the source alloy composition near the composition lattice matched to InP. The Ga content of the deposited film increased with increasing deposition temperature and inlet HC1 mole fraction, while it decreased with increasing inlet AsH₃ mole fraction. Several solution models were selected for the liquid binary solution and the solid ternary solution, and the results are compared.