Advanced Transarterial Chemoembolization using Magnetic Janus Microparticles with Anti-Angiogenetic Drugs for Liver Cancer

민남기,조수정,박우람,김신현,김동현 한국고분자학회 2019 한국고분자학회 학술대회 연구논문 초록집 Vol.44 No.1

비만증의 예방과 관리 - 원인

민남기 한국만성질환관리협회 1989 월간성인병 Vol.101 No.-

태양전지재료의 연구개발현황과 전망

민남기,이주익 대한전기학회 1982 전기의 세계 Vol.31 No.8

본고의 내용은 다음과 같다. 1. 태양전지용 반도체재료의 특성 2. 실리콘 3. 비정질 실리콘 4. 화합물반도체

산약(山藥)이 생쥐의 기아 stress 에 미치는 영향

민남기,이태희,Min, Nam-Ki,Lee, Tae-Hee 대한한의학방제학회 2006 大韓韓醫學方劑學會誌 Vol.14 No.2

Objectives : We Investigated the effect of Dioscoreae Rhizoma(山藥) on the change of the corticosterone and the rectal temperature(直腸溫渡) of the mice induced by starvation stress(創戰 스트레스). Methods : After administration of Dioscoreae Rhizoma (0.25g/kg, 0.5g, 1.0g/kg, 3g/kg) three times, mice were starved. The corticosterone and rectal temperature were measured after 36.5 hours starvation stress. Results : The plasma cortiosterone levels in the S-2, S-3 and S-4 group were decreased significantly comparing with the control group (P<0.01) after 36.5 hours starvation stress. and rectal temperature was decreased in the control goup comparing with the normal group, but there is no significant change in the Dioscoreae Rhizoma treated group. Conclusion : it might be recognized that Dioscoreae Rhizoma has preventive-effect against starvation stress and also it might be needed further study in various viewpoints. Objectives : This study was disegned to elucidate the short term effect of Rossa rugosae Radix on proliferation. differentiation and maturation of 3T3-L1 Preadipocyte. Methods: 3T3-L1 preadipocytes obtained from Korean Cell Line Bank were cultured in a D ulbecco’ s modified eagle medium(MEM) culture solution containing 10% fetal bovine serum(FBS) and various concentrations of aqueous extract of Rossa rugosae Radix.. The short term effect of the extract of Rossa rugosae Radix on proliferation. differentiation and maturation of 3T3-L1 preadipocytes were investigate after treatment for 24 hours by measuring MTT. Oil Red 0 and latate dehydrogenase activity.. Results: The Rossa rugosae Radix extract inhibited significantly the proliferation of 3T3-L1 preadipocytes and tended to increase latate dehydrogenase activity in the media of differentiated 3T3-L1 preadipocytes & matured 3T3-L1 preadipocytes. the extract also inhibit the lipid accumulation of differentiated 3T3-L1 preadipocytes & matuered 3T3-L1 preadipocytes. Conclusions: These results demonstrated that the Rossa rugosae Radjx extract inhibited the proliferation. differentiation and maturation of 3T3-L1 preadipocytes. suggesting that Rossa rugosae Radix has anti-obesity effect: however further in vivo study is needed to demonstrate its pharmacological effects.

高低抗 半導體의 電氣傳導 메카니즘에 관한 理論的 硏究

閔南基,朴河鎔 동국대학교 1983 論文集 Vol.22 No.-

In this paper, the theoretical studies on the electrical conduction mechanisms of high-resistivity semiconductors are made in two cases: (1) semi-insulating semiconductor contained a recombination center, which is partially occupied by electrons in thermal equilibrium, and (2) relaxation case semiconductor. In the first case, a general model for the conduction mechanism and an occurrence of current-controlled negative resistance (CCNR) are developed by taking into account the injection level dependence of the drift length of injected electrons and holes. In the second case, the forward and reverse current-voltage characteristics of p^+-i-n^+ structure in which i-region consists of relaxation semiconductor are discussed and the definite explanation for the sublinear behavior of the characteristics is given.

SiCl4-NH3 反應에 의해 성장된 Si3N4膜의 DC傳導機構

閔南基 東國大學校 産業科學技術硏究所 1981 産業科學技術硏究所 硏究報告 Vol.1 No.-

당뇨병 원인과 그 치료대책 - 개요 원인

민남기 한국만성질환관리협회 1990 월간성인병 Vol.108 No.-

Bi_2 O_3 簿膜의 電氣傳導 메카니즘과 誘電特性

閔南基,張在明 동국대학교 1982 論文集 Vol.21 No.-

The electrical conduction mechanism and the dielectric properties of bismuth oxide thin films prepared by vacuum depostion have been studied. The current-voltage characteristics indicate that the conduction mechanism in Bi_2O_3 film is space-charge limited. From the measured values of threshold voltage (V_th)at which space charge conduction sets in, the trap density around the Fermi level is calculated to the about 10^17-10^18/㎠ The capacitance and the loss factor (tan δ) vary with frequency and aging of the samples. Interfacial polarization due to the excess bismuth and various defects appears to be the main relaxation mechanism operating in the low frequency region.

Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma

민남기,권광호,Alexander Efremov,이현우,김만수,김성일 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.5

This work reports investigations of the etch characteristics and mechanisms for Ge$_2$Sb$_2$Te$_5$ (GST), SiO$_2$ and a photoresist (PR) in a Cl$_2$/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl$_2$/Ar mixing ratio (43 -- 86 \% Ar), the gas pressure (4 -- 10 mTorr), the source power (400 -- 700 W), and the bias power (50 -- 300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO$_2$ is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO$_2$ by C$_x$H$_y$ radicals resulting from the decomposition of the PR. This work reports investigations of the etch characteristics and mechanisms for Ge$_2$Sb$_2$Te$_5$ (GST), SiO$_2$ and a photoresist (PR) in a Cl$_2$/Ar inductively coupled plasma. The etch rates were measured as functions of the Cl$_2$/Ar mixing ratio (43 -- 86 \% Ar), the gas pressure (4 -- 10 mTorr), the source power (400 -- 700 W), and the bias power (50 -- 300 W). Langmuir probe diagnostics and 0-dimensional plasma modeling provided information on the plasma parameters and plasma active species. The behavior of the GST etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. The etching behavior of the PR is due to both chemical and physical etch pathway, while the etching behavior of the SiO$_2$ is quite close to that for GST. This can be connected to the effective destruction of Si-O bonds in the thin surface layer by ion bombardment and to the reduction of SiO$_2$ by C$_x$H$_y$ radicals resulting from the decomposition of the PR.

다공질 실리콘: 새로운 마이크로센서 및 마이크로액추에이터 재료

민남기,이치우,정우식,김동일,Min Nam Ki,Chi Woo Lee,Jeong Woo Sik,Kim Dong Il 한국전기화학회 1999 한국전기화학회지 Vol.2 No.1

다공질 실리콘을 이용한 마이크로센서와 마이크로액츄에이터의 연구는 현재 초기단계에 있기 때문에, 지금까지 발광 다이오드나 화학 센서 등과 같은 몇몇 응용 소자가 발표된 수준에 머물러 있다. 본 논문에서는 화학 센서와 광소자를 중심으로 다공질 실리콘 센서 및 액추에이터 연구현황을 고찰 보고하고자 한다. 정전용량형 다공질 실리콘 습도센서의 감습 특성은 비선형이였으며, 저습보다는 $40\%RH$ 이상의 고습영역에서 더 높은 감도를 나타내었다. 다공질 실리콘 $n^+-p-n^+$ 소자는 에탄올에 노출되었을 때 소자 전류가 급격히 증가하였다. 다공질 실리콘 다이어프램에 제작된 $p^+-PSi-n^+$ 다이오드는 광 스위칭 현상을 나타내어 광센서 또는 광스위치로써의 응용 가능성을 보여주었다. 다공질 실리콘에 365nm를 조사해서 얻어진 광루미네센스(PL)는 넓은 스펙트럼을 보였으며, 피크 파장은 610 nm이었다. ITO/PSi/In LED의 전계발광(EL)스펙트럼은 PL에 비해 약간 더 넓은 영역에 걸쳐 나타났으며, 피크 에너지가 단파장(535nm)으로 이동하였다. Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.