Investigation of ZnO:Al Thin Films Sputtered at Different Deposition Temperatures

김덕규,김홍배 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.10

ZnO:Al (AZO) thin films were prepared on glass substrates by using RF magnetron sputtering at various deposition temperature, and their properties were investigated. With increasing deposition temperature, the crystallinity was slightly improved, whereas the resistivity continuously deteriorated due to a decrease in the mobility and in the carrier concentration. From an X-ray photoelectron spectroscopy (XPS) analysis, the behaviors of the mobility and the carrier concentration were affected by impurity bonding such as oxygen species on the film surface. The mobility decreased due to an increase in the potential height and was the main factor at a low deposition temperature (200 C). In addition, the carrier concentration decrease due to the trapping of electrons and to the reduction of oxygen vacancy and was dominant factor at a high deposition temperature (400 C). For the deposition of AZO films, if improved electrical properties are to be obtained, the deposition temperature needs to choose so as to minimize the impurity bonding.

저온 AlN 중간층 삽입에 의한 Si (111) 기판위에 성장한 GaN 층의 특성

김덕규,김홍배 한국물리학회 2009 새물리 Vol.59 No.4

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the properties of the GaN layers with a LT AlN interlayer inserted were investigated. The insertion of the LT AlN interlayer decreased the crack density of the 2nd GaN layer from 300 /cm to 5 /cm, sensitively. Also, the full width at half maximum of the (002) X-ray rocking curve was improved from 680 sec-1 to 651 sec-1, and the full width at half maximum of the bound exciton line was improved from 52.4 meV to 38.1 meV in photoluminescence measurements at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si (111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 삽입에 따른 특성을 연구하였다. 저온 AlN 중간층 삽입함으로서 2차 GaN 층의 균열밀도는 300/cm에서 5/cm로 급격히 감소하였다. 또한, 저온 AlN 중간층 삽입으로 인해 (002) X-ray rocking curve의 full width at half maximum은 680 sec-1에서 651 sec-1로 향상되었고 300 K에서 측정한 photoluminescence의 full width at half maximum도 52.4 meV에서 38.1 meV로 향상되었다.

Si (111) 기판위에 성장한 GaN 층의 저온 AlN 중간층 두께에 따른 특성

김덕규 한국물리학회 2008 새물리 Vol.57 No.4

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor-phase epitaxy, and the properties of the GaN layers were investigated for various LT AlN interlayer thicknesses. With LT AlN interlayer, cracks in the GaN layer changed sensitively. For 10-nm-thick LT AlN, the density of cracks was 5/cm, the full width at half maximum of the (002) X-ray rocking curve was 651 arcsec, and the full width at half maximum of the bound exciton line was as low as 38.1 meV at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si (111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 두께에 따른 특성을 연구하였다. 저온 AlN 중간층 두께에 따라 GaN 층의 균열이 민감하게 변함을 알 수 있었고 10 nm 두께에서 균열밀도 5/cm 의 가장 적은 균열을 얻었다. 또한, (002) X-ray rocking curve 의 full width at half maximum 측정 결과 651 arcsec 의 결정성을 갖는 박막을 얻었고 photoluminescence 측정 결과 300 K 에서 38.1 meV 의 full width at half maximum 을 얻었다.

홍화씨 추출물의 국소투여가 백서 두개골 결손부 재생에 미치는 영향

김덕규,홍성우,유경태,서재진,김흥식,유형근,신형식,Kim, Doek-Kyu,Hong, Sung-Woo,You, Kyung-Tae,Seo, Jae-Jin,Kim, Heung-Shik,You, Hyung-Keun,Shin, Hyung-Shik 대한치주과학회 1999 Journal of Periodontal & Implant Science Vol.29 No.2

The ultimate goal of periodontal treatment is the regeneration of periodontal tissues which have been lost due to periodontal disease. Recently, many natural medicines have been studied for their potential of anti-bacterial, anti-inflammatory and regenerative effects in periodontal tissues. Safflower seeds have been traditionally used as a drug for treatment of fracture and blood stasis in oriental medicine. The objective of the present study is to examine the biologic effects of safflower seeds extract on bone formation and regeneration of rat calvarial defects. The calvarial defects were made with 8mm trephine bur and extract of safflower seeds were placed directly at these defects. 24 rats were divided into control and experimental groups, and each group was sacrificed at 1 week, 4 weeks and 8 weeks. To study a histopathology related to bone regeneration, Goldner's Masson Trichrome stain and histomorphologic measuring was done at each weeks. In the early phase of bone healing, less inflammatory infiltration and capillary proliferation was found in experimental group compared to control. Dense bony tissues and matured bone structures in defect areas were found in experimental groups. And area of new bone formation was significantly increased at 8 weeks in experimental group. These results indicate that direct local application of safflower seeds extract reduces the early inflammatory response and promotes the regeneration of new bone in calvarial defects of rats.

저온 AlN 중간층 이용하여 성장한 GaN 층의 1차 GaN 두께에 따른 특성

김덕규 한국물리학회 2008 새물리 Vol.57 No.6

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the properties of the GaN layers as a function of the 1st GaN layer's thickness were investigated. For variious tkickness of the 1st GaN layer, the density of cracks in the GaN layer changed sensitively. For 0.2-$\mu$m-thick 1st GaN Layer, the density of cracks was 30/cm, the full width at half maximum of the (002) X-ray rocking curve was 686 arcsec, and the full width at half maximum of the bound exciton line was as low as 46.1 meV at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si(111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 아래의 1차 GaN 두께에 따른 특성을 연구하였다. 1차 GaN 두께에 따라 GaN 층의 균열이 민감하게 변함을 알 수 있었고 0.2 $\mu$m 두께에서 균열밀도 30/cm 의 가장 적은 균열을 얻었다. 또한, (002) X-ray rocking curve 의 full width at half maximum 측정 결과 686 arcsec 의 결정성을 갖는 박막을 얻었고 photoluminescence 측정 결과 300 K 에서 46.1 meV 의 full width at half maximum 을 얻었다.

효율적인 조기영어 읽기지도 : 심리언어학적 접근을 중심으로

김덕규 한국강원영어영문학회 1991 영어영문학 Vol.10 No.1

In Situ Heat Treatment of ZnO:Al Thin Films Fabricated by RF Magnetron Sputtering

김덕규 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heattreatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films wereinvestigated in this study. As heat treatment temperature was increased, crystal quality was improved first and thenit was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheetresistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surfaceroughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtainingfilms with better electrical characteristics.

Complete genome sequence of plant-pathogenic Pseudomonas sp. N3-W isolated from subarctic tundra soil

김덕규,우성호,이정은,김상희,이영미 한국미생물학회 2022 미생물학회지 Vol.58 No.4

Pseudomonas sp. N3-W, a bacterial plant pathogen isolated from a subarctic Alaskan tundra soil for its ability to secrete strong extracellular protease(s), was found to be capable of producing brown spots on hot pepper leaves. The complete genome sequence consisted of one circular chromosome with 6,674,931 bp (G + C content of 59.7%). A computer-aided analysis discovered 5,726 protein coding sequences (CDSs), of which at least nine CDSs were putatively assigned to code for various proteolytic enzymes. The production of these proteases would explain N3-W’s high degree of extracellular proteolytic activity, which could contribute to the evasion and deactivation of defense mechanisms of plant hosts.

비만으로 일어날 수 있는 질병 -고지혈증의 경우-

김덕규 사단법인 한국당뇨협회 1995 당뇨 Vol.66 No.-

파닉스와 영어 읽기 지도의 방향

김덕규 한국중앙영어영문학회 2003 영어영문학연구 Vol.45 No.3

The primary purpose of this paper is to suggest the appropriate and achievable way of learning of English reading for early readers. Learning to read is not something that starts with memorizing the alphabet or phoneme. Traditional phonics, with its focus on individual phoneme, doesn't give children an accessible entry route into reading. Children's experience of reading needs to begin with whole texts, being read for meaning. One way to do this is through shared reading with predictable, engaging stories. This way differs from the traditional part-to-whole approach in that it teaches parts of the words after a story has been read to, with and by the children rather than before the story is read by the children. This method is called whole-to-part reading. Whole-to-part phonics instruction differs from traditional phonics in that it teaches letter-onset and letter-rime correspondences rather than letter-phoneme correspondences. More importantly, this way emphasizes the importance of the invisible factors which affect the reading process such as the children's enjoyment, confidence, schema (background knowledge), familiar context and making analogies. Whole-to-part approach to reading is psycholinguistically appropriate and meets children's needs. It gives us a very useful framework for early reading learning, and the first step to begin with it is to select the age-appropriate predictable story books.