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고방(古方)으로 치료한 두드러기 환자 39례의 임상보고(臨床報告)
탁명림,김미보,변석미,고우신,윤화정,Tark, Myoung-Rim,Kim, Mi-Bo,Byun, Seok-Mi,Ko, Woo-Shin,Yoon, Hwa-Jung 대한한방안이비인후피부과학회 2009 한방안이비인후피부과학회지 Vol.22 No.3
Objectives : This study was designed to investigate the chronical features of urticaria and the effects of urticaria treatment with Ko-Bang(古方). Methods : We treated 39 patients for urticaria with Ko-Bang(古方), who visited to care urticaria at the Dept. of Dermatology Oriental medical hospital Dong-eui university from Jan, 2008 to Sep, 2009. This study was assessed using the chart analysis and the follow-up survey by telephone. Results & Conclusions : 1. 39 outpatients were surveyed, who were 20 males and 19 females. And patients who were ages 21-30 were the largest group, 11(28.21%). Among the 39 patients, acute urticaria patients were 8(20.5%), chronic urticaria patients were 31(79.5%), and contraction of a disease period between 6 weeks with 3 months was 17.9%. 2. The causes of urticaria were measured unknown 37.5%, foods 37.5%, drugs 25% in acute and unknown 35.5%, a change of temperature 29%, foods 16% in chronic. And suspected provocation factors were measured unknown and foods each 12 cases. The most of accompanied symptoms was itching sign(34 cases), the second most was self-conscious fever(10 cases). 3. Out of treat prescription(Ko-Bang,古方), Injinho-Tang(茵蔯蒿湯) was used most in 5 cases, Daehwanghwangryunsasim-Tang(大黃黃連瀉心湯), Hwangryun-Tang(黃連湯), Daesiho-Tang(大柴胡湯) were used in each 4 cases, Galgeun-Tang(葛根湯), Chijadaehwangsi-Tang(梔子大黃?湯), Sosiho-Tang(小柴胡湯) were used in each 3 cases, Gaemagakban-Tang(桂麻各半湯), Chijasi-Tang(梔子?湯),Oryeongsan(五笭散) were used in each 2 cases. 4. When the processes of treatment were classified by one poison(一毒), there were the 19 cases (48.7%) which was caused by Bun(煩), the 12 cases(30.8%) by Water(水) and the 4 cases(10.3%) by Gyur(結).
실드터널 시공시의 지표 구조물의 침하 억제 대책에 관한 연구
임종철,윤이환,박이근,고호성,홍석우 釜山大學校生産技術硏究所 1999 生産技術硏究所論文集 Vol.56 No.-
연약지반 터널 굴차시 실드공법은 근접 구조물 안전에 유용한 공법이다. 하지만 실드 터널 공법은 터널 주변 지반의 변형을 최소화 할 수 있는 장점을 가지는 반면 테일 보이드(Tail Void)에 그라우트된 주입재가 경화되기 전에 발생하는 지반 변형은 피하기 어렵다. 본 연구에서는 테일 보이드로 인한 인접 구조물의 침하를 억제하는 방법중 하나인 마이크로파일(micropile)의 영향을 모형실험을 통하여 규명하였다. 기초적인 실험 결과로써 마이크로파일 보강시 마이크로파일의 효과적인 설치방향과 침하 억제비를 밝혔다. In soft ground tunneling, shield method is very good for safety of neighboring structures. Although shield tunnel method has the merits to minimize the deformation of ground around tunnel, ground deformations occurred until the material grouted in tail void hardens are inevitable. In this study, the effects of micropile used as one method to restrain the settlement of neighboring structures by the tail void are studied by laboratory model tests. As a basic test result, the effective direction of micropile and the restraint rate of settlement by micropile reinforcement are known.
Ko, Pil-Seok,Park, Kyoung-Seok,Yoon, Yeo-Chang,Sheen, Mi-Hyang,Kim, Sam-Dong Elsevier 2015 THIN SOLID FILMS - Vol.589 No.-
<P><B>Abstract</B></P> <P>To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO<SUB>x</SUB>-buffered passivation structure compared to the conventional Si<SUB>3</SUB>N<SUB>4</SUB> passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si<SUB>3</SUB>N<SUB>4</SUB> passivation was in the range of 10<SUP>12</SUP>–10<SUP>13</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP>, which is one-order higher than that of the SOD (10<SUP>11</SUP>–10<SUP>12</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP>) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si<SUB>3</SUB>N<SUB>4</SUB> passivation. A well-resolved reduction of the electron Hall mobility of the Si<SUB>3</SUB>N<SUB>4</SUB> passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs </LI> <LI> Characterize the charge density and interface states using the C–V measurements </LI> <LI> SOD-buffered passivation minimizes surface states at the interface. </LI> <LI> DC performance of SOD-buffered structure is due to the interface characteristics. </LI> </UL> </P>