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      • SCOPUSKCI등재

        염료공장의 톨루이딘 슬폰산 공정폐수와 종합폐수의 생물학적 처리

        송승구,주승팔,이민규,박태주 한국화학공학회 1988 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.26 No.2

        염료공장의 고농도 유기성 폐수인 Toluidine Sulfonic Acid(TSA) 공정폐수의 희석처리도 실험과 TSA 공정폐수와 공장전체 폐수를 혼합한 종합폐수의 처리도 실험을 행하였다. TSA 공정폐수의 응집처리는 pH가 6.5일 때 황산알루미늄 300㎎/ℓ 주입으로 약 40%의 COD 제거 효과를 나타내었다. TSA 공정폐수와 종합폐수를 완전혼합 활성슬럿지 공법으로 처리한 결과, 폭기시간 86시간 이상, F/M비 0.074㎏BOD/㎏MLSS/day 이하에서 68% 및 88% 이상의 COD 및 BOD 제거율을 얻었으며, 이 실험조건에서 동력학적 계수, k, K_s, Y, K_d의 값은 각각 0.174-0.453day^(-1), 68.8-152.6㎎/ℓ, 0.445-0.653 및 0.0022-0.0075day^(-1)의 범위로 나타났다. An laboratory-scale experiment was carried out to determine the characteristics and treatability of toluidine sulfonic acid (TSA) process wastewater and combined wastewater in a dye plant. Chemical treatment with aluminium sulfate, 300 ㎎/ℓ at pH 6.5 showed about 40% COD removal efficiency. With a completely-mixed-activated-sludge (CMAS) unit, the removal efficiencies of BOD_5 and COD were achieved more than 88% and 66%, respectively, at aeration time longer than 86 hours, that corresponded to the F/M ratio below 0.074 ㎏BOD/㎏MLSS/day. Design parameters, such as k, K_s, Y and K_d applied to CMAS mathematical equations were found as the range of 0.174-0.452 day^(-1), 68.8-152.6 ㎎/ℓ, 0.445-0.653 and 0.0022-0.0075 day^(-1), respectively.

      • KCI등재

        Identification and Characterization of a Novel Bacterial ATP-Sensitive K+ Channel

        최승범,Jong-Uk Kim,Hyun Joo,Churl K. Min 한국미생물학회 2010 The journal of microbiology Vol.48 No.3

        Five bacterial species that are most likely to have putative prokaryotic inward rectifier K+ (Kir) channels were selected by in silico sequence homology and membrane topology analyses with respect to the number of transmembrane domains (TMs) and the presence of K+ selectivity filter and/or ATP binding sites in reference to rabbit heart inward rectifier K+ channel (Kir6.2). A dot blot assay with genomic DNAs when probed with whole rabbit Kir6.2 cDNA further supported the in silico analysis by exhibiting a stronger hybridization in species with putative Kir’s compared to one without a Kir. Among them, Chromobacterium violaceum gave rise to a putative Kir channel gene, which was PCR-cloned into the bacterial expression vector pET30b(+), and its expression was induced in Escherichia coli and confirmed by gel purification and immunoblotting. On the other hand, this putative bacterial Kir channel was functionally expressed in Xenopus oocytes and its channel activity was measured electrophysiologically by using two electrode voltage clamping (TEVC). Results revealed a K+ current with characteristics similar to those of the ATP-sensitive K+ (K-ATP) channel. Collectively, cloning and functional characterization of bacterial ion channels could be greatly facilitated by combining the in silico analysis and heterologous expression in Xenopus oocytes.

      • Development of the readout system for the K2K SciBar detector

        Yoshida, M.,Yamamoto, S.,Murakami, T.,Tanaka, M.,Nakaya, T.,Nishikawa, K.,Joo, K.K.,Kim, B.J.,Kim, J.Y.,Kim, S.B.,Lee, M.J.,Lim, I.T. IEEE 2004 IEEE transactions on nuclear science Vol.51 No.6

        Readout electronics for the scintillation bar tracking detector (SciBar) in the K2K neutrino oscillation experiment has been developed. SciBar has 14 336 scintillator bars in total. The deposited energy and timing of particles from neutrino interactions in the scintillator bars are measured by 64-channel multianode photo-multiplier tubes (MAPMTs). Compact custom-designed electronics to record the MAPMT signals were developed, consisting of front-end circuit boards attached to each MAPMT and back-end electronics modules sitting in a VME crate. The front-end circuit board multiplexes pulse-height information from all 64 anodes and generates a fast triggering signal. Two sets of ASICs (IDEAS VA32HDR11 and TA32CG) are employed for these functions. The bias voltages and relay of control signals are also handled on the board. The back-end electronics module controls the front-end board by providing the control, timing, and low-voltage signals. The board also digitizes the multiplexed signal from the front-end. The electronics achieves low noise of less than 0.3 photo-electrons and good linearity up to 300 (150) photo-electrons for MAPMTs at the gain of 5×10<SUP>5</SUP> (10<SUP>6</SUP>).

      • SCISCIESCOPUS

        Photoproduction of <tex> $ \Uplambda $</tex> and <tex> $ \Upsigma ^{0}$</tex> hyperons off protons with linearly polarized photons at <tex> $ E_{\gamma }=1.5\hbox{--}3.0$</tex> GeV

        Shiu, S. H.,Kohri, H.,Chang, W. C.,Ahn, D. S.,Ahn, J. K.,Chen, J. Y.,Daté,, S.,Ejiri, H.,Fujimura, H.,Fujiwara, M.,Fukui, S.,Gohn, W.,Hicks, K.,Hotta, T.,Hwang, S. H.,Imai, K.,Ishikawa, T.,Joo, American Physical Society 2018 Physical Review C Vol.97 No.1

        <P>We report the measurement of the gamma p -> K+Lambda and gamma p -> K+Sigma(0) reactions at SPring-8. The differential cross sections and photon-beam asymmetries are measured at forward K+ production angles using linearly polarized tagged-photon beams in the range of E-gamma = 1.5-3.0 GeV. With increasing photon energy, the cross sections for both gamma p -> K+Lambda and gamma p -> K+Sigma(0) reactions decrease slowly. Distinct narrow structures in the production cross section have not been found at E gamma = 1.5-3.0 GeV. The forward peaking in the angular distributions of cross sections, a characteristic feature of t-channel exchange, is observed for the production of Lambda in the whole observed energy range. A lack of similar feature for Sigma(0) production reflects a less dominant role of t-channel contribution in this channel. The photon-beam asymmetries remain positive for both reactions, suggesting the dominance of K* exchange in the t channel. These asymmetries increase gradually with the photon energy, and have a maximum value of +0.6 for both reactions. Comparison with theoretical predictions based on the Regge trajectory in the t channel and the contributions of nucleon resonances indicates the major role of t-channel contributions as well as non-negligible effects of nucleon resonances in accounting for the reaction mechanism of hyperon photoproduction in this photon energy regime.</P>

      • SCISCIESCOPUS

        Synthesis and Thermoelectric Properties of p-Type Double-Filled Ce1−z YbzFe4−x Co x Sb12 Skutterudites

        Joo, G. S.,Shin, D. K.,Kim, I. H. Springer Science + Business Media 2016 Journal of electronic materials Vol.45 No.3

        <P>p-Type Ce1-zYbzFe4-xCoxSb12 skutterudites were prepared by encapsulated melting and hot pressing. The thermoelectric and transport properties were examined as a function of Ce/Yb double filling fraction and amount of Co substitution. The Hall coefficients and Seebeck coefficients were positive, implying that all specimens had p-type conduction. Carrier concentration decreased with increasing Co and Yb content. Electrical conductivity decreased and Seebeck coefficients increased with increasing Co content, because of charge compensation. In contrast, electrical conductivity increased and Seebeck coefficients decreased with increasing Yb filling fraction, because of the valence difference between Yb-2 (or 3+) and Ce-3 (or 4+). The lattice thermal conductivity of the double-filled skutterudites was lower than that of the single-filled skutterudites. The thermoelectric properties of the double-filled skutterudites were improved substantially; the maximum power factor, PF = 3.2 mW m(-1) K-2, was achieved at 823 K for Ce0.25Yb0.75Fe3.5Co0.5Sb12 and the maximum dimensionless figure of merit ZT = 0.87 was achieved at 723 K for Ce0.75Yb0.25Fe3.5Co0.5Sb12.</P>

      • KCI등재

        Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si

        Joo-Hyung Kim,Velislava A. Ignatova,Peter Kücher,Martin Weisheit,Ehrenfried Zschech 한국물리학회 2009 Current Applied Physics Vol.9 No.2

        We investigated the effect of post annealing on the electrical and physical properties of atomic-layerdeposited thin HfO2, HfSixOy and HfOyNz gate oxide films on Si. It was found that the main leakage conduction of all Hf-based oxide films was of the Poole–Frenkel (P–F) type in low electric fields and Fowler– Nordheim (F–N) conduction in higher fields. Also, it was observed that the transition from P–F to F–N of the annealed HfOyNz sample occurred earlier than that of the as-grown one. By using spectroscopic ellipsometry, it was found that the annealing process decreased the band gap of HfO2, HfSixOy and HfOyNz films. From depth profile measurements on the HfOyNz film, we conclude that N moves toward the surface and interface during annealing. We investigated the effect of post annealing on the electrical and physical properties of atomic-layerdeposited thin HfO2, HfSixOy and HfOyNz gate oxide films on Si. It was found that the main leakage conduction of all Hf-based oxide films was of the Poole–Frenkel (P–F) type in low electric fields and Fowler– Nordheim (F–N) conduction in higher fields. Also, it was observed that the transition from P–F to F–N of the annealed HfOyNz sample occurred earlier than that of the as-grown one. By using spectroscopic ellipsometry, it was found that the annealing process decreased the band gap of HfO2, HfSixOy and HfOyNz films. From depth profile measurements on the HfOyNz film, we conclude that N moves toward the surface and interface during annealing.

      • KCI등재

        J 적분법을 이용한 Ni-Cr-Mo-V 강의 파괴인성 평가

        주영한,한봉기 대한금속재료학회(대한금속학회) 1988 대한금속·재료학회지 Vol.26 No.9

        Elastic-plastic fracture toughness(J_(IC)) of Ni-Cr-Mo-V steel with different yield strengths has been evaluated by two different testing methods (ASTM E8l3 JSME S001) and compared with K_(IC) and Charpy V-notch (CVN) impart value. At high yield strength levels, J_(IC) values measured by ASTM and JSME method are almost equal, however, at low yield strength levels, J_(IC) values by the ASTM method exceed those by the JSME method. This difference in J_(IC) values is due to variation in the method of considering crack extension on the specimen fracture surface. The comparison of K_(IC) with J_(IC) and CVN impact values shows that a very good correlation, exists between 93- 144 ㎏/㎟ yield strength levels. Therefore, it is possible to predict K_IC value with J_(IC) and CVN impact test.

      • SCISCIESCOPUSKCI등재

        Thermoelectric properties of Bi2Te2.7Se0.3 nanocomposites embedded with MgO nanoparticles

        Joo, S. J.,Son, J. H.,Min, B. K.,Lee, J. E.,Kim, B. S.,Ryu, B.,Park, S. D.,Lee, H. W. 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.

        <P>Bi2Te2.7Se0.3 bulk materials containing x vol% MgO nanoparticles (average particle size ae 100 nm, x = 0, 0.5, 1.0, 1.5) were synthesized by using high-energy ball milling and plasma- activated sintering (PAS) without any special process for nanoparticle dispersion. A microstructure investigation using a scanning electron microscope (SEM) confirmed that MgO nanoparticles were properly dispersed in the Bi2Te2.7Se0.3 matrix and that the grain size was smaller in MgO-containing samples due to suppressed grain growth. The resistivity and the maximum Seebeck coefficient of Bi2Te2.7Se0.3 increased with increasing MgO content whereas the thermal conductivity decreased in the measurement temperature range of 298 K - 573 K. As a result, the maximum dimensionless figure of merit, ZT (max), increased about 8.5% in this study, from 0.806 for pristine Bi2Te2.7Se0.3 to 0.875 when x = 1.5. The ZT (max) was observed to shift to lower temperature, the electron concentration to decrease, and the electron mobility to increase with increasing x, which were explained using a hypothesis that the Te (Bi) antisite defect concentration decreased as the MgO content increased. In summary, the addition of MgO nanoparticles has been shown to be a simple and effective method to improve the low-temperature thermoelectric properties of n-type Bi2Te3 materials.</P>

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