http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
고집적회로 금속선 형성을 위한 화학증작 알루미늄의 선택적 증착
이경일,김영성,주승기 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.12
Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.
알루미늄/실리콘 직접 접촉창에 증착된 화학 증착 알루미늄의 스파이킹 특성
이경일,김영성,주승기,라관구,김우식 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.12
Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.