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수직형 Feed-through 갖는 RF-MEMS 소자의 웨이퍼 레벨 패키징
박윤권,이덕중,박흥우,김훈,이윤희,김철주,주병권,Park, Yun-Kwon,Lee, Duck-Jung,Park, Heung-Woo,kim, Hoon,Lee, Yun-Hi,Kim, Chul-Ju,Ju, Byeong-Kwon 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.10
Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.
박흥우(Heung Woo Park),박윤권(Yun Kwon Park),이덕중(Duck Jung Lee),김철주(Chul Ju Kim),박정호(Jung Ho Park),오명환(Myung Hwan Oh),주병권(Byeong Kwon Ju) 한국센서학회 2001 센서학회지 Vol.10 No.5
This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorenta force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were 2 ㎛, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with POCl₃(l0^(20) cm^(-3)). 2㎛-thick cantilevers were fabricated onto PSG(2㎛-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at 10^(-6) tort. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3 %/T at about 1 Tesla magnetic field.
정전 열 접합을 이용한 Multi-Substrate Bonding
이덕중,주병권,최우범,한정인,조경익,이광배,장진,오명환 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
We performed silicon-to-glass bonding using silicon direct bonding followed by anodic bonding(SDAB). Initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon and glass ensemble using silicon direct bonding(SDB) method. We found that the bonded specimen using SDAB process had higher strength than one using anodic bonding process only. We performed multiple layer bonding by SDAB, which is glass- silicon -glass as sandwich structure. In the silicon wafer, the (1mm x 2mm x 500μm)-sized cavity was formed by the anisotropic etching of the silicon substrate in EPW(Ethylendiamin-Pyrocatechol-Water). And, the cavity was sealed with glass wafers by SDAB method.