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비전도성 에폭시를 사용한 RF-MEMS 소자의 웨이퍼 레벨 밀봉 실장 특성
박윤권,이덕중,박흥우,송인상,김정우,송기무,이윤희,김철주,주병권 한국마이크로전자및패키징학회 2001 마이크로전자 및 패키징학회지 Vol.8 No.4
본 연구에서는 RF-MEMS소자의 웨이퍼레벨 패키징에 적용하기 위한 밀봉 실장 방법에 대하여 연구를 하였다. 비전도성 B-stage에폭시를 사용하여 밀봉 실장하는 방법은 플립칩 접합 방법과 함께 MEMS 소자 패키징에 많은 장점을 줄 것이다. 특히 소자의 동작뿐만 아니라 기생성분의 양을 줄여야 하는 RF-MEMS 소자에는 더욱더 많은 장전을 보여준다. 비전도성 B-stage 에폭시는 2차 경화가 가능한 것으로 우수한 밀봉 실장 특성을 보였다. 패키징시 상부기관으로 사용되는 유리기판 위에 500 $\mu\textrm{m}$의 밀봉선을 스크린 프린팅 방식으로 패턴닝을 한 후에 $90^{\circ}C$와 $170^{\circ}C$에서 열처리를 하였다. 2차 경화 후 패턴닝된 모양이 패키징 공정이 끝날 때까지 계속 유지가 되었다. 패턴닝 후 에폭시 놀이가 4인치 웨이퍼에서 $\pm$0.6$\mu\textrm{m}$의 균일성을 얻었으며, 접합강토는 20 MPa을 얻었다. 또한 밀봉실장 특성을 나타내는 leak rate는 $10^{-7}$ cc/sec를 얻었다. In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.
수직형 Feed-through 갖는 RF-MEMS 소자의 웨이퍼 레벨 패키징
박윤권,이덕중,박흥우,김훈,이윤희,김철주,주병권,Park, Yun-Kwon,Lee, Duck-Jung,Park, Heung-Woo,kim, Hoon,Lee, Yun-Hi,Kim, Chul-Ju,Ju, Byeong-Kwon 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.10
Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.
김인태, 박윤권, 이시형, 이윤희, 이전국, 김남수, 주병권 대한전기학회 2002 전기학회논문지C Vol.51 No.12
- Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed Si3N4/SiO2/Si3N4 multi-layer and air gap is about 50㎛. Firstly, We perform one-dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, K2eff and Q are 4.1% and 1100.
증 례 : 혈액투석 환자에서 급성 대장염의 합병증으로 발생한 소장-대장 누공 1예
박하늘 ( Ha Neul Park ),김진아 ( Jin Ah Kim ),최수경 ( Soo Kyoung Choi ),신갑수 ( Kab Soo Shin ),문윤권 ( Yoon Gwon Mun ),최보미 ( Bo Mi Choi ),김영옥 ( Young Ok Kim ) 대한내과학회 2016 대한내과학회지 Vol.90 No.1
전신 상태가 불량한 성인 혈액투석 환자에서 위막성 대장염으로 추정되는 급성 대장염 발생시, 적절한 치료에도 불구하고 설사 등의 임상증세가 지속되는 경우에는 드문 합병증이지만 소장-대장 누공 발생 가능성을 고려해야 할 것으로 사료된다. Enterocolic fistulas are commonly associated with previous surgery, Crohn’s disease, diverticulitis, radiation therapy, and malignancy. Here, we report a rare case of enterocolic fistula caused by acute colitis in a hemodialysis patient. A 62-year-old man on maintenance hemodialysis underwent a radical nephrectomy via a paramedian incision due to spontaneous right kidney rupture and was treated with prophylactic antibiotics. On the 16th day of antibiotic therapy, he complained of abdominal pain and diarrhea. Abdominal computed tomography (CT) and ascitic fluid culture revealed acute bacterial peritonitis and sigmoidoscopy showed acute colitis. After treating these diseases with adequate antibiotics, the abdominal pain and ascites were relieved, but the diarrhea persisted. Abdominal CT obtained 7 days later showed an enterocolic fistula. To our knowledge, this is the first case of enterocolic fistula due to acute colitis in Korea. (Korean J Med 2016;90:41-45)
Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징
김용국,박윤권,김재경,주병권 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12S
In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 [dB] and a insertion loss of -0.04∼-0.08 [dB]. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.
Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징
김용국,박윤권,김재경,주병권 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12
In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.