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Recessed-gate 4H-SiC MESFET의 DC특성에 관한 연구
박승욱,황웅준,신무환,Park, Seung-Wook,Hwang, Ung-Jun,Shin, Moo-Whan 한국재료학회 2003 한국재료학회지 Vol.13 No.1
DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.
Piezoelectric효과와 열 효과 모델링을 고려한 AlGaN/GaN HFET의 DC 특성
박승욱,황웅준,신무환,Park, Seung-Wook,Hwang, Woong-Joon,Shin, Moo-Whan 한국재료학회 2003 한국재료학회지 Vol.13 No.12
In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.